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CY7C245A-15JC PDF预览

CY7C245A-15JC

更新时间: 2024-11-26 22:15:23
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 可编程只读存储器
页数 文件大小 规格书
12页 228K
描述
2K x 8 Reprogrammable Registered PROM

CY7C245A-15JC 技术参数

生命周期:Obsolete零件包装代码:QLCC
包装说明:QCCJ, LDCC28,.5SQ针数:28
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.71风险等级:5.82
最长访问时间:10 ns其他特性:PROGRAMMABLE SYNCHRONOUS OR ASYNCHRONOUS OUTPUT ENABLE; PROGRAMMABLE ASYNCHRONOUS REGISTERS
I/O 类型:COMMONJESD-30 代码:S-PQCC-J28
JESD-609代码:e0长度:11.5316 mm
内存密度:16384 bit内存集成电路类型:OTP ROM
内存宽度:8功能数量:1
端子数量:28字数:2048 words
字数代码:2000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:2KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:QCCJ
封装等效代码:LDCC28,.5SQ封装形状:SQUARE
封装形式:CHIP CARRIER并行/串行:PARALLEL
电源:5 V编程电压:12.5 V
认证状态:Not Qualified座面最大高度:4.572 mm
最大待机电流:0.12 A子类别:OTP ROMs
最大压摆率:0.12 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:TIN LEAD
端子形式:J BEND端子节距:1.27 mm
端子位置:QUAD宽度:11.5316 mm

CY7C245A-15JC 数据手册

 浏览型号CY7C245A-15JC的Datasheet PDF文件第2页浏览型号CY7C245A-15JC的Datasheet PDF文件第3页浏览型号CY7C245A-15JC的Datasheet PDF文件第4页浏览型号CY7C245A-15JC的Datasheet PDF文件第5页浏览型号CY7C245A-15JC的Datasheet PDF文件第6页浏览型号CY7C245A-15JC的Datasheet PDF文件第7页 
CY7C245A  
2K x 8 Reprogrammable Registered PROM  
Features  
Functional Description  
The CY7C245A is a high-performance, 2K x 8, electrically  
programmable, read-only memory packaged in a slim 300-mil  
plastic or hermetic DIP. The ceramic package may be  
equipped with an erasure window; when exposed to UV light  
the PROM is erased and can then be reprogrammed. The  
memory cells utilize proven EPROM floating-gate technology  
and byte-wide intelligent programming algorithms.  
• Windowed for reprogrammability  
• CMOS for optimum speed/power  
• High speed  
15-ns address set-up  
10-ns clock to output  
• Low power  
The CY7C245A replaces bipolar devices and offers the advan-  
tages of lower power, reprogrammability, superior perfor-  
mance and high programming yield. The EPROM cell requires  
only 12.5V for the supervoltage, and low current requirements  
330 mW (commercial) for -25 ns  
660 mW (military)  
allow gang programming. The EPROM cells allow each  
memory location to be tested 100%, because each location is  
written into, erased, and repeatedly exercised prior to encap-  
sulation. Each PROM is also tested for AC performance to  
guarantee that after customer programming the product will  
meet AC specification limits.  
• Programmable synchronous or asynchronous output  
enable  
• On-chip edge-triggered registers  
• Programmable asynchronous register (INIT)  
• EPROM technology, 100% programmable  
• Slim, 300-mil, 24-pin plastic or hermetic DIP  
• 5V 10% VCC, commercial and military  
• TTL-compatible I/O  
The CY7C245A has an asynchronous initialize function (INIT).  
This function acts as a 2049th 8-bit word loaded into the  
on-chip register. It is user programmable with any desired  
word, or may be used as a PRESET or CLEAR function on the  
outputs. INIT is triggered by a low level, not an edge.  
• Direct replacement for bipolar PROMs  
• Capable of withstanding greater than 2001V static  
discharge  
Logic Block Diagram  
Pin Configurations  
DIP Top View  
INIT  
1
24  
23  
22  
21  
20  
19  
18  
17  
16  
A
A
6
V
CC  
O
7
A
0
2
3
4
A
8
7
O
A
1
A
A
5
9
A
2
A
4
A
10  
PROGRAMMABLE  
ARRAY  
ROW  
6
O
MULTIPLEXER  
5
A
A
3
ADDRESS  
3
INIT  
E/E  
S
A
6
2
A
4
8-BIT  
A
1
5
O
7
8
9
CP  
EDGE-  
A
5
TRIGGERED  
REGISTER  
A
0
O
7
ADDRESS  
DECODER  
A
6
4
O
0
O
6
O
O
10  
11  
12  
O
5
A
1
15  
14  
13  
7
O
O
4
2
3
O
A
8
GND  
O
3
A
9
COLUMN  
LCC/PLCC (Opaque only) Top View  
2
O
ADDRESS  
A
10  
1
O
3 2 1 2827  
26  
4
CP  
A
25 10  
A
5
4
3
PROGRAMMABLE  
MULTIPLEXER  
A
24  
23  
22  
21  
20  
19  
INIT  
6
0
A
E/E  
D
C
Q
2
E/E  
S
S
7
A
1
CP  
NC  
8
A
0
9
CP  
NC  
O
7
10  
11  
O
0
O
6
131415161718  
12  
Selection Guide  
7C245A-15  
7C245A-18  
7C245A-25  
7C245A-35  
Unit  
ns  
Minimum Address Set-up Time  
Maximum Clock to Output  
15  
10  
18  
12  
25  
12  
35  
15  
ns  
Maximum Operating Current Standard Commercial  
Military  
120  
120  
120  
90  
90  
mA  
mA  
120  
120  
Cypress Semiconductor Corporation  
Document #: 38-04007 Rev. *D  
3901 North First Street  
San Jose, CA 95134  
408-943-2600  
RevisedNovember4, 2003  

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