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CY7C235A-40JCR PDF预览

CY7C235A-40JCR

更新时间: 2024-01-12 03:15:54
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 存储内存集成电路可编程只读存储器OTP只读存储器电动程控只读存储器
页数 文件大小 规格书
9页 227K
描述
OTP ROM, 1KX8, 20ns, CMOS, PQCC28, PLASTIC, LCC-28

CY7C235A-40JCR 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:DIP
包装说明:DIP,针数:24
Reach Compliance Code:unknown风险等级:5.77
最长访问时间:20 ns其他特性:PROGRAMMABLE ASYNCHRONOUS REGISTERS
JESD-30 代码:R-PDIP-T24JESD-609代码:e0
长度:30.099 mm内存密度:8192 bit
内存集成电路类型:OTP ROM内存宽度:8
湿度敏感等级:NOT SPECIFIED功能数量:1
端子数量:24字数:1024 words
字数代码:1000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:1KX8封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装形状:RECTANGULAR
封装形式:IN-LINE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:COMMERCIAL
座面最大高度:4.826 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:COMMERCIAL端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:7.62 mmBase Number Matches:1

CY7C235A-40JCR 数据手册

 浏览型号CY7C235A-40JCR的Datasheet PDF文件第2页浏览型号CY7C235A-40JCR的Datasheet PDF文件第3页浏览型号CY7C235A-40JCR的Datasheet PDF文件第4页浏览型号CY7C235A-40JCR的Datasheet PDF文件第5页浏览型号CY7C235A-40JCR的Datasheet PDF文件第6页浏览型号CY7C235A-40JCR的Datasheet PDF文件第7页 
1CY7C235A  
CY7C235A  
1K x 8 Registered PROM  
• Direct replacement for bipolar PROMs  
Features  
• Capable of withstanding greater than 2001V static dis-  
charge  
• CMOS for optimum speed/power  
• High speed  
Functional Description  
— 18 ns address set-up  
— 12 ns clock to output  
The CY7C235A is a high-performance 1024 word by 8 bit elec-  
trically programmable read only memory packaged in a slim  
300-mil plastic or hermetic DIP, 28-pin leadless chip carrier, or  
28-pin plastic leaded chip carrier. The memory cells utilize  
proven EPROM floating gate technology and byte-wide intelli-  
gent programming algorithms.  
• Low power  
— 495 mW (commercial)  
— 660 mW (military)  
• Synchronous and asynchronous output enables  
• On-chip edge-triggered registers  
• Programmable asynchronous registers (INIT)  
• EPROM technology, 100% programmable  
The CY7C235A replaces bipolar devices pin for pin and offers  
the advantages of lower power, superior performance, and  
high programming yield. The EPROM cell requires only 12.5V  
for the supervoltage, and low current requirements allow for  
gang programming. The EPROM cells allow for each memory  
location to be tested 100%, as each location is written into,  
erased, and repeatedly exercised prior to encapsulation. Each  
PROM is also tested for AC performance to guarantee that the  
product will meet AC specification limits after customer pro-  
gramming.  
• Slim, 300-mil, 24-pin plastic or hermetic DIP or 28-pin  
LCC and PLCC  
5V ±10% V , commercial and military  
CC  
• TTL-compatible I/O  
Logic Block Diagram  
Pin Configuration  
DIP  
Top View  
INIT  
1
2
3
4
5
6
24  
23  
22  
21  
V
A
A
6
CC  
7
O
A
8
7
A
A
9
5
A
9
A
4
E
INIT  
E
S
O
6
20  
19  
A
3
A
8
PROGRAMMABLE  
ARRAY  
ROW  
MULTIPLEXER  
A
2
ADDRESS  
A
7
A
1
O
5
7
8
9
10  
11  
12  
18  
17  
16  
CP  
O
7
O
6
O
5
A
0
8-BIT  
A
6
EDGE-  
O
O
4
0
A
5
TRIGGERED  
REGISTER  
ADDRESS  
DECODER  
O
1
15  
14  
13  
O
O
4
A
4
2
O
3
GND  
O
3
A
3
C235A-2  
A
2
O
2
COLUMN  
ADDRESS  
LCC/PLCC  
Top View  
A
1
O
1
A
0
O
0
CP  
3 2 1 2827  
4
26  
E
25  
24  
23  
22  
21  
20  
19  
A
4
3
5
CP  
INIT  
A
6
E
A
S
2
7
CP  
NC  
A
1
8
A
0
9
E
S
NC  
O
C235A-1  
7
10  
O
O
6
11  
0
131415161718  
12  
E
C235A-3  
Selection Guide  
7C235A-18  
7C235A-25  
7C235A-30  
7C235A-40  
Minimum Address Set-Up Time (ns)  
Maximum Clock to Output (ns)  
18  
12  
90  
25  
12  
30  
15  
40  
20  
Maximum Operating  
Current (mA)  
Commercial  
Military  
90  
90  
90  
120  
120  
120  
Cypress Semiconductor Corporation  
3901 North First Street  
San Jose  
CA 95134  
408-943-2600  
November 1992 – Revised March 1995  

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