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CY7C195-25VCT PDF预览

CY7C195-25VCT

更新时间: 2023-07-15 00:00:00
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器光电二极管
页数 文件大小 规格书
12页 216K
描述
Standard SRAM, 64KX4, 25ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28

CY7C195-25VCT 数据手册

 浏览型号CY7C195-25VCT的Datasheet PDF文件第2页浏览型号CY7C195-25VCT的Datasheet PDF文件第3页浏览型号CY7C195-25VCT的Datasheet PDF文件第4页浏览型号CY7C195-25VCT的Datasheet PDF文件第5页浏览型号CY7C195-25VCT的Datasheet PDF文件第6页浏览型号CY7C195-25VCT的Datasheet PDF文件第7页 
96  
CY7C194  
CY7C195  
CY7C196  
64K x 4 Static RAM  
able(s) (CE on the CY7C194 and CY7C195, CE1, CE2 on the  
CY7C196) and three-state drivers. They have an automatic  
power-down feature, reducing the power consumption by 75%  
when deselected.  
Features  
• High speed  
— 12 ns  
Writing to the device is accomplished when the Chip Enable(s)  
(CE on the CY7C194 and CY7C195, CE1, CE2 on the  
CY7C196) and Write Enable (WE) inputs are both LOW. Data  
on the four input pins (I/O0 through I/O3) is written into the  
memory location, specified on the address pins (A0 through  
A15).  
• Output enable (OE) feature (7C195 and 7C196)  
• CMOS for optimum speed/power  
• Low active power  
— 880 mW  
• Low standby power  
Reading the device is accomplished by taking the Chip En-  
able(s) (CE on the CY7C194 and CY7C195, CE1, CE2 on the  
CY7C196) LOW, while Write Enable (WE) remains HIGH. Un-  
der these conditions the contents of the memory location  
specified on the address pins will appear on the four data I/O  
pins.  
— 220 mW  
• TTL-compatible inputs and outputs  
• Automatic power-down when deselected  
Functional Description  
The CY7C194, CY7C195, and CY7C196 are high-perfor-  
mance CMOS static RAMs organized as 65,536 by 4 bits.  
Easy memory expansion is provided by active LOW Chip En-  
A die coat is used to ensure alpha immunity.  
Logic Block Diagram  
Pin Configurations  
DIP/SOJ  
Top View  
DIP/SOJ  
Top View  
V
28  
27  
26  
1
2
3
4
5
6
V
NC  
A
6
A
CC  
1
24  
CC  
6
A
5
A
A
2
3
4
5
6
7
8
9
10  
11  
23  
22  
21  
20  
19  
18  
17  
5
7
A
7
A
8
A
8
A
4
A
3
A
4
25  
24  
A
A
3
9
A
A
10  
A
11  
A
12  
A
13  
9
A
A
2
2
A
10  
A
11  
23  
22  
7C194  
A
1
A
1
7C195  
7C196  
A
A
7
8
9
10  
11  
12  
13  
0
0
CE  
A
12  
A
13  
2
21  
20  
19  
18  
17  
NC  
I/O  
I/O  
3
(7C196)  
INPUT BUFFER  
A
A
16  
15  
2
14  
NC  
A
A
I/O  
I/O  
I/O  
15  
14  
3
1
(7C195)  
A
1
I/O  
I/O  
I/O  
15  
2
1
0
CE  
14  
13  
0
A
CE  
2
12  
1
GND  
WE  
I/O  
I/O  
3
A
OE  
16  
15  
3
A
4
GND  
WE  
14  
2
A
5
C194-2  
1024 x 64 x 4  
ARRAY  
A
C194-3  
6
A
7
A
I/O  
I/O  
1
8
A
9
0
A
10  
POWER  
DOWN  
COLUMN  
DECODER  
CE (7C196 only)  
1
2
CE  
WE  
(OE)  
(7C195 and  
7C196 ONLY)  
C194-1  
Selection Guide  
7C194-12  
7C195-12  
7C196-12  
7C194-15  
7C195-15  
7C196-15  
7C194-20  
7C195-20  
7C196-20  
7C194-25  
7C195-25  
7C196-25  
7C194-35  
7C195-35  
7C196-35  
7C194-45  
7C196-45  
Maximum Access Time (ns)  
12  
155  
30  
15  
145  
30  
20  
135  
30  
25  
115  
30  
35  
115  
30  
45  
Maximum Operating Current (mA)  
Maximum Standby Current (mA)  
30  
Cypress Semiconductor Corporation  
3901 North First Street  
San Jose  
CA 95134  
408-943-2600  
Document #: 38-05162 Rev. **  
Revised September 18, 2001  

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