Datasheet > 存储 > SRAM> CY7C1519V18-300BZI

CY7C1519V18-300BZI

更新时间： 2024-11-27 05:19:47

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		存储内存集成电路静态存储器双倍数据速率时钟
页数	文件大小	规格书
28页	463K
描述
72-Mbit DDR-II SRAM 4-Word Burst Architecture

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技术参数
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CY7C1519V18-300BZI 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	零件包装代码：	BGA
包装说明：	15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165	针数：	165
Reach Compliance Code：	compliant	ECCN代码：	3A991.B.2.A
HTS代码：	8542.32.00.41	风险等级：	5.45
Is Samacsys：	N	最长访问时间：	0.45 ns
其他特性：	PIPELINED ARCHITECTURE	最大时钟频率 (fCLK)：	300 MHz
I/O 类型：	COMMON	JESD-30 代码：	R-PBGA-B165
JESD-609代码：	e0	长度：	17 mm
内存密度：	75497472 bit	内存集成电路类型：	DDR SRAM
内存宽度：	18	湿度敏感等级：	3
功能数量：	1	端子数量：	165
字数：	4194304 words	字数代码：	4000000
工作模式：	SYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	4MX18
输出特性：	3-STATE	封装主体材料：	PLASTIC/EPOXY
封装代码：	LBGA	封装等效代码：	BGA165,11X15,40
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY, LOW PROFILE
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	220
电源：	1.5/1.8,1.8 V	认证状态：	Not Qualified
座面最大高度：	1.4 mm	最小待机电流：	1.7 V
子类别：	SRAMs	最大压摆率：	0.95 mA
最大供电电压 (Vsup)：	1.9 V	最小供电电压 (Vsup)：	1.7 V
标称供电电压 (Vsup)：	1.8 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	BALL
端子节距：	1 mm	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	NOT SPECIFIED	宽度：	15 mm
Base Number Matches：	1

CY7C1519V18-300BZI 数据手册

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CY7C1517V18

CY7C1528V18

CY7C1519V18

CY7C1521V18

72-Mbit DDR-II SRAM 4-Word Burst

Architecture

Features

Functional Description

• 72-Mbit density (8M x 8, 8M x 9, 4M x 18, 2M x 36)

• 300-MHz clock for high bandwidth

The CY7C1517V18, CY7C1528V18, CY7C1519V18 and

CY7C1521V18 are 1.8V Synchronous Pipelined SRAM

equipped with DDR-II (Double Data Rate) architecture. The

DDR-II consists of an SRAM core with advanced synchronous

peripheral circuitry and a two-bit burst counter. Addresses for

Read and Write are latched on alternate rising edges of the

input (K) clock. Write data is registered on the rising edges of

both K and K. Read data is driven on the rising edges of C and

C if provided, or on the rising edge of K and K if C/C are not

provided. Each address location is associated with four 8-bit

words in the case of CY7C1517V18 and four 9-bit words in the

case of CY7C1528V18 that burst sequentially into or out of the

device. The burst counter always starts with “00” internally in

the case of CY7C1517V18 and CY7C1528V18. On

CY7C1519V18 and CY7C1521V18, the burst counter takes in

the last two significant bits of the external address and bursts

four 18-bit words in the case of CY7C1519V18, and four 36-bit

words in the case of CY7C1521V18, sequentially into or out of

the device.

• 4-Word burst for reducing address bus frequency

• Double Data Rate (DDR) interfaces

(data transferred at 600 MHz) @ 300 MHz

• Two input clocks (K and K) for precise DDR timing

— SRAM uses rising edges only

• Two input clocks for output data (C and C) to minimize

clock-skew and flight-time mismatches

• Echo clocks (CQ and CQ) simplify data capture in

high-speed systems

• Synchronous internally self-timed writes

• 1.8V core power supply with HSTL inputs and outputs

• Variable drive HSTL output buffers

• Expanded HSTL output voltage (1.4V–V_DD

)

Asynchronous inputs include output impedance matching

input (ZQ). Synchronous data outputs (Q, sharing the same

physical pins as the data inputs, D) are tightly matched to the

two output echo clocks CQ/CQ, eliminating the need for

separately capturing data from each individual DDR-II SRAM

in the system design.Output data clocks (C/C) enable

maximum system clocking and data synchronization flexibility.

• Available in 165-ball FBGA package (15 x 17 x 1.4 mm)

• Offered in lead-free and non lead-free packages

• JTAG 1149.1 compatible test access port

• Delay Lock Loop (DLL) for accurate data placement

Configurations

All Synchronous Input Pass through input registers controlled

CY7C1517V18 – 8M x 8

CY7C1528V18 – 8M x 9

CY7C1519V18 – 4M x 18

CY7C1521V18 – 2M x 36

All data outputs pass through output

registers controlled by the C or C (or K or K in a single clock

by the K or K input clocks.

domain) input clocks Writes are conducted with on-chip

synchronous self-timed write circuitry.

Selection Guide

300 MHz

300

278 MHz

250 MHz

250

200 MHz

200

167 MHz

167

Unit

MHz

Maximum Operating Frequency

Maximum Operating Current

278

900

950

850

750

700

Cypress Semiconductor Corporation

Document #: 38-05565 Rev. *E

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised September 25, 2006

12 3 4 5 6 7...28

中文翻译

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与CY7C1519V18-300BZI相关器件

型号	品牌	获取价格	描述	数据表
CY7C1519V18-300BZXC	CYPRESS	获取价格	72-Mbit DDR-II SRAM 4-Word Burst Architecture
CY7C1519V18-300BZXI	CYPRESS	获取价格	72-Mbit DDR-II SRAM 4-Word Burst Architecture
CY7C151AV18	CYPRESS	获取价格	RAM9 QDR-I/DDR-I/QDR-II/DDR- II Errata
CY7C151V18	CYPRESS	获取价格	RAM9 QDR-I/DDR-I/QDR-II/DDR- II Errata
CY7C152V18*	CYPRESS	获取价格	RAM9 QDR-I/DDR-I/QDR-II/DDR- II Errata
CY7C1520AV18	CYPRESS	获取价格	72-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1520AV18-167BZC	CYPRESS	获取价格	72-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1520AV18-167BZI	CYPRESS	获取价格	72-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1520AV18-167BZXC	CYPRESS	获取价格	72-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1520AV18-167BZXI	CYPRESS	获取价格	72-Mbit DDR-II SRAM 2-Word Burst Architecture

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