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CY7C1518JV18-250BZI PDF预览

CY7C1518JV18-250BZI

更新时间: 2024-11-27 06:51:43
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赛普拉斯 - CYPRESS 静态存储器双倍数据速率
页数 文件大小 规格书
26页 647K
描述
72-Mbit DDR-II SRAM 2-Word Burst Architecture

CY7C1518JV18-250BZI 数据手册

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CY7C1516JV18, CY7C1527JV18  
CY7C1518JV18, CY7C1520JV18  
72-Mbit DDR-II SRAM 2-Word  
Burst Architecture  
Features  
Functional Description  
72-Mbit density (8M x 8, 8M x 9, 4M x 18, 2M x 36)  
300 MHz clock for high bandwidth  
The CY7C1516JV18, CY7C1527JV18, CY7C1518JV18, and  
CY7C1520JV18 are 1.8V Synchronous Pipelined SRAM  
equipped with DDR-II architecture. The DDR-II consists of an  
SRAM core with advanced synchronous peripheral circuitry and  
a 1-bit burst counter. Addresses for read and write are latched  
on alternate rising edges of the input (K) clock. Write data is  
registered on the rising edges of both K and K. Read data is  
driven on the rising edges of C and C if provided, or on the rising  
edge of K and K if C/C are not provided. Each address location  
is associated with two 8-bit words in the case of CY7C1516JV18  
and two 9-bit words in the case of CY7C1527JV18 that burst  
sequentially into or out of the device. The burst counter always  
starts with a “0” internally in the case of CY7C1516JV18 and  
CY7C1527JV18. On CY7C1518JV18 and CY7C1520JV18, the  
burst counter takes in the least significant bit of the external  
address and bursts two 18-bit words in the case of  
CY7C1518JV18 and two 36-bit words in the case of  
CY7C1520JV18 sequentially into or out of the device.  
2-word burst for reducing address bus frequency  
Double Data Rate (DDR) interfaces  
(data transferred at 600 MHz) at 300 MHz  
Two input clocks (K and K) for precise DDR timing  
SRAM uses rising edges only  
Two input clocks for output data (C and C) to minimize clock  
skew and flight time mismatches  
Echo clocks (CQ and CQ) simplify data capture in high speed  
systems  
Synchronous internally self-timed writes  
DDR-II operates with 1.5 cycle read latency when Delay Lock  
Loop (DLL) is enabled  
Asynchronous inputs include an output impedance matching  
input (ZQ). Synchronous data outputs (Q, sharing the same  
physical pins as the data inputs D) are tightly matched to the two  
output echo clocks CQ/CQ, eliminating the need for separately  
capturing data from each individual DDR SRAM in the system  
design. Output data clocks (C/C) enable maximum system  
clocking and data synchronization flexibility.  
Operates similar to a DDR-I device with 1 cycle read latency in  
DLL off mode  
1.8V core power supply with HSTL inputs and outputs  
Variable drive HSTL output buffers  
Expanded HSTL output voltage (1.4V–VDD  
)
All synchronous inputs pass through input registers controlled by  
the K or K input clocks. All data outputs pass through output  
registers controlled by the C or C (or K or K in a single clock  
domain) input clocks. Writes are conducted with on-chip  
synchronous self-timed write circuitry.  
Available in 165-ball FBGA package (15 x 17 x 1.4 mm)  
Offered in both Pb-free and non Pb-free packages  
JTAG 1149.1 compatible test access port  
Delay Lock Loop (DLL) for accurate data placement  
Configurations  
CY7C1516JV18 – 8M x 8  
CY7C1527JV18 – 8M x 9  
CY7C1518JV18 – 4M x 18  
CY7C1520JV18 – 2M x 36  
Selection Guide  
Description  
Maximum Operating Frequency  
Maximum Operating Current  
300 MHz  
300  
250 MHz  
250  
Unit  
MHz  
mA  
x8  
x9  
1035  
1035  
1045  
1055  
800  
800  
x18  
x36  
800  
900  
Cypress Semiconductor Corporation  
Document Number: 001-12559 Rev. *D  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised June 25, 2008  
[+] Feedback  

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