Datasheet > 存储 > SRAM> CY7C1518AV18-250BZI

CY7C1518AV18-250BZI

更新时间： 2024-11-24 05:19:47

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		存储内存集成电路静态存储器双倍数据速率时钟
页数	文件大小	规格书
28页	1161K
描述
72-Mbit DDR-II SRAM 2-Word Burst Architecture

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

CY7C1518AV18-250BZI 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	BGA	包装说明：	15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
针数：	165	Reach Compliance Code：	not_compliant
ECCN代码：	3A991.B.2.A	HTS代码：	8542.32.00.41
风险等级：	5.34	最长访问时间：	0.45 ns
其他特性：	PIPELINED ARCHITECTURE	最大时钟频率 (fCLK)：	250 MHz
I/O 类型：	COMMON	JESD-30 代码：	R-PBGA-B165
JESD-609代码：	e0	长度：	17 mm
内存密度：	75497472 bit	内存集成电路类型：	DDR SRAM
内存宽度：	18	湿度敏感等级：	3
功能数量：	1	端子数量：	165
字数：	4194304 words	字数代码：	4000000
工作模式：	SYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	4MX18
输出特性：	3-STATE	封装主体材料：	PLASTIC/EPOXY
封装代码：	LBGA	封装等效代码：	BGA165,11X15,40
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY, LOW PROFILE
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	220
电源：	1.5/1.8,1.8 V	认证状态：	Not Qualified
座面最大高度：	1.4 mm	最小待机电流：	1.7 V
子类别：	SRAMs	最大压摆率：	0.8 mA
最大供电电压 (Vsup)：	1.9 V	最小供电电压 (Vsup)：	1.7 V
标称供电电压 (Vsup)：	1.8 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	BALL
端子节距：	1 mm	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	NOT SPECIFIED	宽度：	15 mm
Base Number Matches：	1

CY7C1518AV18-250BZI 数据手册

浏览型号CY7C1518AV18-250BZI的Datasheet PDF文件第2页

浏览型号CY7C1518AV18-250BZI的Datasheet PDF文件第3页

浏览型号CY7C1518AV18-250BZI的Datasheet PDF文件第4页

浏览型号CY7C1518AV18-250BZI的Datasheet PDF文件第5页

浏览型号CY7C1518AV18-250BZI的Datasheet PDF文件第6页

浏览型号CY7C1518AV18-250BZI的Datasheet PDF文件第7页

CY7C1516AV18

CY7C1527AV18

CY7C1518AV18

CY7C1520AV18

PRELIMINARY

72-Mbit DDR-II SRAM 2-Word Burst

Architecture

Features

Functional Description

• 72-Mbit density (8M x 8, 8M x 9, 4M x 18, 2M x 36)

• 300-MHz clock for high bandwidth

The CY7C1516AV18, CY7C1527AV18, CY7C1518AV18 and

CY7C1520AV18 are 1.8V Synchronous Pipelined SRAM

equipped with DDR-II architecture. The DDR-II consists of an

SRAM core with advanced synchronous peripheral circuitry

and a 1-bit burst counter. Addresses for Read and Write are

latched on alternate rising edges of the input (K) clock.Write

data is registered on the rising edges of both K and K. Read

data is driven on the rising edges of C and C if provided, or on

the rising edge of K and K if C/C are not provided. Each

address location is associated with two 8-bit words in the case

of CY7C1516AV18 and two 9-bit words in the case of

CY7C1527AV18 that burst sequentially into or out of the

device. The burst counter always starts with a “0” internally in

the case of CY7C1516AV18 and CY7C1527AV18. On

CY7C1518AV18 and CY7C1520AV18, the burst counter takes

in the least significant bit of the external address and bursts

two 18-bit words in the case of CY7C1518AV18 and two 36-bit

words in the case of CY7C1520AV18 sequentially into or out

of the device.

• 2-Word burst for reducing address bus frequency

• Double Data Rate (DDR) interfaces

(data transferred at 600 MHz) @ 300 MHz

• Two input clocks (K and K) for precise DDR timing

— SRAM uses rising edges only

• Two input clocks for output data (C and C) to minimize

clock-skew and flight-time mismatches

• Echo clocks (CQ and CQ) simplify data capture in

high-speed systems

• Synchronous internally self-timed writes

• DDR-II operates with 1.5 cycle read latency when DLL

is enabled

• Operates like a DDR I device with 1 cycle read latency

in DLL off mode

Asynchronous inputs include output impedance matching

input (ZQ). Synchronous data outputs (Q, sharing the same

physical pins as the data inputs D) are tightly matched to the

two output echo clocks CQ/CQ, eliminating the need for

separately capturing data from each individual DDR SRAM in

the system design. Output data clocks (C/C) enable maximum

system clocking and data synchronization flexibility.

• 1.8V core power supply with HSTL inputs and outputs

• Variable drive HSTL output buffers

• Expanded HSTL output voltage (1.4V–V_DD

)

• Available in 165-ball FBGA package (15 x 17 x 1.4 mm)

• Offered in both lead-free and non lead-free packages

• JTAG 1149.1 compatible test access port

All synchronous inputs pass through input registers controlled

by the K or K input clocks. All data outputs pass through output

registers controlled by the C or C (or K or K in a single clock

domain) input clocks. Writes are conducted with on-chip

synchronous self-timed write circuitry.

• Delay Lock Loop (DLL) for accurate data placement

Configurations

CY7C1516AV18 – 8M x 8

CY7C1527AV18 – 8M x 9

CY7C1518AV18 – 4M x 18

CY7C1520AV18 – 2M x 36

Cypress Semiconductor Corporation

Document #: 001-06982 Rev. *B

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised September 20, 2006

[+] Feedback

12 3 4 5 6 7...28

中文翻译

下载PDF

与CY7C1518AV18-250BZI相关器件

型号	品牌	获取价格	描述	数据表
CY7C1518AV18-250BZXC	CYPRESS	获取价格	72-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1518AV18-250BZXI	CYPRESS	获取价格	72-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1518AV18-278BZC	CYPRESS	获取价格	72-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1518AV18-278BZI	CYPRESS	获取价格	72-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1518AV18-278BZXC	CYPRESS	获取价格	72-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1518AV18-278BZXI	CYPRESS	获取价格	72-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1518AV18-300BZC	CYPRESS	获取价格	72-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1518AV18-300BZI	CYPRESS	获取价格	72-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1518AV18-300BZXC	CYPRESS	获取价格	72-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1518AV18-300BZXI	CYPRESS	获取价格	72-Mbit DDR-II SRAM 2-Word Burst Architecture

与CY7C1518AV18-250BZI相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

39
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

31
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

59
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

55

产品中心

服务支持

精选活动

关于我们

帮助中心

CY7C1518AV18-250BZI

CY7C1518AV18-250BZI 技术参数

CY7C1518AV18-250BZI 数据手册

与CY7C1518AV18-250BZI相关器件

与CY7C1518AV18-250BZI相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

CY7C1518AV18-250BZI

CY7C1518AV18-250BZI 技术参数

CY7C1518AV18-250BZI 数据手册

与CY7C1518AV18-250BZI相关器件

与CY7C1518AV18-250BZI相关文章

您还可以找

您在本页遇到什么问题？