Datasheet > 存储 > SRAM> CY7C1512JV18-267BZI

CY7C1512JV18-267BZI

更新时间： 2024-11-27 05:19:47

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		存储内存集成电路静态存储器时钟
页数	文件大小	规格书
26页	628K
描述
72-Mbit QDR⑩-II SRAM 2-Word Burst Architecture

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技术参数
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CY7C1512JV18-267BZI 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	BGA	包装说明：	15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
针数：	165	Reach Compliance Code：	not_compliant
ECCN代码：	3A991.B.2.A	HTS代码：	8542.32.00.41
风险等级：	5.83	最长访问时间：	0.45 ns
其他特性：	PIPELINED ARCHITECTURE	最大时钟频率 (fCLK)：	267 MHz
I/O 类型：	SEPARATE	JESD-30 代码：	R-PBGA-B165
长度：	17 mm	内存密度：	75497472 bit
内存集成电路类型：	QDR SRAM	内存宽度：	18
湿度敏感等级：	3	功能数量：	1
端子数量：	165	字数：	4194304 words
字数代码：	4000000	工作模式：	SYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	4MX18	输出特性：	3-STATE
封装主体材料：	PLASTIC/EPOXY	封装代码：	LBGA
封装等效代码：	BGA165,11X15,40	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, LOW PROFILE	并行/串行：	PARALLEL
电源：	1.5/1.8,1.8 V	认证状态：	Not Qualified
座面最大高度：	1.4 mm	最小待机电流：	1.7 V
子类别：	SRAMs	最大压摆率：	1.495 mA
最大供电电压 (Vsup)：	1.9 V	最小供电电压 (Vsup)：	1.7 V
标称供电电压 (Vsup)：	1.8 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子形式：	BALL	端子节距：	1 mm
端子位置：	BOTTOM	宽度：	15 mm
Base Number Matches：	1

CY7C1512JV18-267BZI 数据手册

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CY7C1510JV18, CY7C1525JV18

CY7C1512JV18, CY7C1514JV18

72-Mbit QDR™-II SRAM 2-Word

Burst Architecture

Features

Configurations

■ Separate independent read and write data ports

❐ Supports concurrent transactions

CY7C1510JV18 – 8M x 8

CY7C1525JV18 – 8M x 9

CY7C1512JV18 – 4M x 18

CY7C1514JV18 – 2M x 36

■ 267 MHz clock for high bandwidth

■ 2-word burst on all accesses

Functional Description

■ DoubleDataRate(DDR)interfacesonbothreadandwriteports

(data transferred at 534 MHz) at 267 MHz

The CY7C1510JV18, CY7C1525JV18, CY7C1512JV18, and

CY7C1514JV18 are 1.8V Synchronous Pipelined SRAMs,

equipped with QDR-II architecture. QDR-II architecture consists

of two separate ports: the read port and the write port to access

the memory array. The read port has dedicated data outputs to

support read operations and the write port has dedicated data

inputs to support write operations. QDR-II architecture has

separate data inputs and data outputs to completely eliminate

the need to “turn-around” the data bus that exists with common

IO devices. Access to each port is through a common address

bus. Addresses for read and write addresses are latched on

alternate rising edges of the input (K) clock. Accesses to the

QDR-II read and write ports are completely independent of one

another. To maximize data throughput, both read and write ports

are equipped with DDR interfaces. Each address location is

associated with two 8-bit words (CY7C1510JV18), 9-bit words

(CY7C1525JV18), 18-bit words (CY7C1512JV18), or 36-bit

words (CY7C1514JV18) that burst sequentially into or out of the

device. Because data can be transferred into and out of the

device on every rising edge of both input clocks (K and K and C

and C), memory bandwidth is maximized while simplifying

system design by eliminating bus “turn-arounds”.

■ Two input clocks (K and K) for precise DDR timing

❐ SRAM uses rising edges only

■ Two input clocks for output data (C and C) to minimize clock

skew and flight time mismatches

■ Echo clocks (CQ and CQ) simplify data capture in high-speed

systems

■ Single multiplexed address input bus latches address inputs

for both read and write ports

■ Separate port selects for depth expansion

■ Synchronous internally self-timed writes

■ QDR-II operates with 1.5 cycle read latency when Delay Lock

Loop (DLL) is enabled

■ Operates like a QDR-I device with 1 cycle read latency in DLL

off mode

■ Available in x8, x9, x18, and x36 configurations

■ Full data coherency, providing most current data

■ Core V_DD= 1.8V (±0.1V); IO V_DDQ= 1.4V to V_DD

■ Available in 165-Ball FBGA package (15 x 17 x 1.4 mm)

■ Offered in both Pb-free and non Pb-free packages

■ Variable drive HSTL output buffers

Depth expansion is accomplished with port selects, which

enables each port to operate independently.

All synchronous inputs pass through input registers controlled by

the K or K input clocks. All data outputs pass through output

registers controlled by the C or C (or K or K in a single clock

domain) input clocks. Writes are conducted with on-chip

synchronous self-timed write circuitry.

■ JTAG 1149.1 compatible test access port

■ Delay Lock Loop (DLL) for accurate data placement

Selection Guide

Description

267 MHz

267

250 MHz

250

Unit

MHz

Maximum Operating Frequency

Maximum Operating Current

1375

1385

1495

1710

1245

1255

1365

1580

x18

x36

Cypress Semiconductor Corporation

Document #: 001-14435 Rev. *C

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised March 10, 2008

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与CY7C1512JV18-267BZI相关器件

型号	品牌	获取价格	描述	数据表
CY7C1512JV18-267BZXC	CYPRESS	获取价格	72-Mbit QDR⑩-II SRAM 2-Word Burst Architectur
CY7C1512JV18-267BZXI	CYPRESS	获取价格	72-Mbit QDR⑩-II SRAM 2-Word Burst Architectur
CY7C1512KV18	CYPRESS	获取价格	72-Mbit QDR-II SRAM 2-Word Burst Architecture
CY7C1512KV18-167BZC	CYPRESS	获取价格	72-Mbit QDR-II SRAM 2-Word Burst Architecture
CY7C1512KV18-167BZI	CYPRESS	获取价格	72-Mbit QDR-II SRAM 2-Word Burst Architecture
CY7C1512KV18-167BZXC	CYPRESS	获取价格	72-Mbit QDR-II SRAM 2-Word Burst Architecture
CY7C1512KV18-167BZXI	CYPRESS	获取价格	72-Mbit QDR-II SRAM 2-Word Burst Architecture
CY7C1512KV18-200BZC	CYPRESS	获取价格	72-Mbit QDR-II SRAM 2-Word Burst Architecture
CY7C1512KV18-200BZI	CYPRESS	获取价格	72-Mbit QDR-II SRAM 2-Word Burst Architecture
CY7C1512KV18-200BZXC	CYPRESS	获取价格	72-Mbit QDR-II SRAM 2-Word Burst Architecture

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