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CY7C1510AV18-167BZC PDF预览

CY7C1510AV18-167BZC

更新时间: 2024-11-24 05:09:35
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赛普拉斯 - CYPRESS 静态存储器
页数 文件大小 规格书
26页 1098K
描述
72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture

CY7C1510AV18-167BZC 数据手册

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CY7C1510AV18  
CY7C1525AV18  
CY7C1512AV18  
CY7C1514AV18  
PRELIMINARY  
72-Mbit QDR-II™ SRAM 2-Word Burst  
Architecture  
Features  
Functional Description  
• Separate Independent Read and Write Data Ports  
— Supports concurrent transactions  
• 250-MHz clock for high bandwidth  
• 2-Word Burst on all accesses  
The CY7C1510AV18, CY7C1525AV18, CY7C1512AV18 and  
CY7C1514AV18 are 1.8V Synchronous Pipelined SRAMs,  
equipped with QDR-II architecture. QDR-II architecture  
consists of two separate ports to access the memory array.  
The Read port has dedicated Data Outputs to support Read  
operations and the Write Port has dedicated Data Inputs to  
support Write operations. QDR-II architecture has separate  
data inputs and data outputs to completely eliminate the need  
to “turn-around” the data bus required with common I/O  
devices. Access to each port is accomplished through a  
common address bus. The Read address is latched on the  
rising edge of the K clock and the Write address is latched on  
• Double Data Rate (DDR) interfaces on both Read and  
Write ports (data transferred at 500 MHz) @ 250 MHz  
• Two input clocks (K and K) for precise DDR timing  
— SRAM uses rising edges only  
Two input clocks for output data (C and C) to minimize  
clock-skew and flight-time mismatches  
the rising edge of the clock. Accesses to the QDR-II Read  
K
and Write ports are completely independent of one another. In  
order to maximize data throughput, both Read and Write ports  
are equipped with Double Data Rate (DDR) interfaces. Each  
address location is associated with two 8-bit words  
(CY7C1510AV18) or 9-bit words (CY7C1525AV18) or 18-bit  
words (CY7C1512AV18) or 36-bit words (CY7C1514AV18)  
that burst sequentially into or out of the device. Since data can  
be transferred into and out of the device on every rising edge  
of both input clocks (K and K and C and C), memory bandwidth  
is maximized while simplifying system design by eliminating  
bus “turn-arounds.”  
• Echo clocks (CQ and CQ) simplify data capture in high  
speed systems  
• Single multiplexed address input bus latches address  
inputs for both Read and Write ports  
• Separate Port Selects for depth expansion  
• Synchronous internally self-timed writes  
• QDR-II operates with 1.5 cycle read latency when DLL  
is enabled  
• Operates like a QDR I device with 1 cycle read latency  
in DLL off mode  
Depth expansion is accomplished with Port Selects for each  
port. Port selects allow each port to operate independently.  
All synchronous inputs pass through input registers controlled  
by the K or K input clocks. All data outputs pass through output  
registers controlled by the C or C (or K or K in a single clock  
domain) input clocks. Writes are conducted with on-chip  
synchronous self-timed write circuitry.  
• Available in x8, x9, x18, and x36 configurations  
• Full data coherency, providing most current data  
• Core VDD = 1.8V (±0.1V); I/O VDDQ = 1.4V to VDD  
• Available in 165-ball FBGA package (15 x 17 x 1.4 mm)  
• Offered in lead-free and non-lead free packages  
• Variable drive HSTL output buffers  
• JTAG 1149.1 compatible test access port  
• Delay Lock Loop (DLL) for accurate data placement  
Configurations  
CY7C1510AV18 – 8M x 8  
CY7C1525AV18 – 8M x 9  
CY7C1512AV18 – 4M x 18  
CY7C1514AV18 – 2M x 36  
Cypress Semiconductor Corporation  
Document #: 001-06984 Rev. *B  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised September 20, 2006  
[+] Feedback  

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