Datasheet > 存储 > SRAM> CY7C1511AV18-300BZI

CY7C1511AV18-300BZI

更新时间： 2024-02-20 16:11:06

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		存储内存集成电路静态存储器时钟
页数	文件大小	规格书
31页	709K
描述
72-Mbit QDR⑩-II SRAM 4-Word Burst Architecture

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

CY7C1511AV18-300BZI 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	BGA	包装说明：	LBGA, BGA165,11X15,40
针数：	165	Reach Compliance Code：	compliant
ECCN代码：	3A991.B.2.A	HTS代码：	8542.32.00.41
风险等级：	5.45	最长访问时间：	0.45 ns
其他特性：	PIPELINED ARCHITECTURE	最大时钟频率 (fCLK)：	300 MHz
I/O 类型：	SEPARATE	JESD-30 代码：	R-PBGA-B165
JESD-609代码：	e1	长度：	17 mm
内存密度：	67108864 bit	内存集成电路类型：	QDR SRAM
内存宽度：	8	湿度敏感等级：	3
功能数量：	1	端子数量：	165
字数：	8388608 words	字数代码：	8000000
工作模式：	SYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	8MX8
输出特性：	3-STATE	封装主体材料：	PLASTIC/EPOXY
封装代码：	LBGA	封装等效代码：	BGA165,11X15,40
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY, LOW PROFILE
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	260
电源：	1.5/1.8,1.8 V	认证状态：	Not Qualified
座面最大高度：	1.4 mm	最小待机电流：	1.7 V
子类别：	SRAMs	最大压摆率：	0.93 mA
最大供电电压 (Vsup)：	1.9 V	最小供电电压 (Vsup)：	1.7 V
标称供电电压 (Vsup)：	1.8 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子面层：	Tin/Silver/Copper (Sn/Ag/Cu)	端子形式：	BALL
端子节距：	1 mm	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	40	宽度：	15 mm
Base Number Matches：	1

CY7C1511AV18-300BZI 数据手册

浏览型号CY7C1511AV18-300BZI的Datasheet PDF文件第2页

浏览型号CY7C1511AV18-300BZI的Datasheet PDF文件第3页

浏览型号CY7C1511AV18-300BZI的Datasheet PDF文件第4页

浏览型号CY7C1511AV18-300BZI的Datasheet PDF文件第5页

浏览型号CY7C1511AV18-300BZI的Datasheet PDF文件第6页

浏览型号CY7C1511AV18-300BZI的Datasheet PDF文件第7页

CY7C1511AV18, CY7C1526AV18

CY7C1513AV18, CY7C1515AV18

72-Mbit QDR™-II SRAM 4-Word

Burst Architecture

Features

Configurations

■ Separate independent read and write data ports

❐ Supports concurrent transactions

CY7C1511AV18 – 8M x 8

CY7C1526AV18 – 8M x 9

CY7C1513AV18 – 4M x 18

CY7C1515AV18 – 2M x 36

■ 300 MHz clock for high bandwidth

■ 4-word burst for reducing address bus frequency

Functional Description

■ DoubleDataRate(DDR)interfacesonbothreadandwriteports

(data transferred at 600 MHz) at 300 MHz

The CY7C1511AV18, CY7C1526AV18, CY7C1513AV18, and

CY7C1515AV18 are 1.8V Synchronous Pipelined SRAMs,

equipped with QDR™-II architecture. QDR-II architecture

consists of two separate ports: the read port and the write port to

access the memory array. The read port has dedicated data

outputs to support read operations and the write port has

dedicated data inputs to support write operations. QDR-II archi-

tecture has separate data inputs and data outputs to completely

eliminate the need to “turn-around” the data bus that exists with

common IO devices. Each port can be accessed through a

common address bus. Addresses for read and write addresses

are latched on alternate rising edges of the input (K) clock.

Accesses to the QDR-II read and write ports are completely

independent of one another. To maximize data throughput, both

read and write ports are equipped with DDR interfaces. Each

address location is associated with four 8-bit words

(CY7C1511AV18), 9-bit words (CY7C1526AV18), 18-bit words

(CY7C1513AV18), or 36-bit words (CY7C1515AV18) that burst

sequentially into or out of the device. Because data can be trans-

ferred into and out of the device on every rising edge of both input

clocks (K and K and C and C), memory bandwidth is maximized

while simplifying system design by eliminating bus

“turn-arounds”.

■ Two input clocks (K and K) for precise DDR timing

❐ SRAM uses rising edges only

■ Two input clocks for output data (C and C) to minimize clock

skew and flight time mismatches

■ Echo clocks (CQ and CQ) simplify data capture in high-speed

systems

■ Single multiplexed address input bus latches address inputs

for read and write ports

■ Separate port selects for depth expansion

■ Synchronous internally self-timed writes

■ QDR-II operates with 1.5 cycle read latency when the Delay

Lock Loop (DLL) is enabled

■ Operates as a QDR-I device with 1 cycle read latency in DLL

off mode

■ Available in x 8, x 9, x 18, and x 36 configurations

■ Full data coherency, providing most current data

■ Core V_DD= 1.8 (± 0.1V); IO V_DDQ= 1.4V to V_DD

■ Available in 165-Ball FBGA package (15 x 17 x 1.4 mm)

■ Offered in both Pb-free and non Pb-free packages

■ Variable drive HSTL output buffers

Depth expansion is accomplished with port selects, which

enables each port to operate independently.

All synchronous inputs pass through input registers controlled by

the K or K input clocks. All data outputs pass through output

registers controlled by the C or C (or K or K in a single clock

domain) input clocks. Writes are conducted with on-chip

synchronous self-timed write circuitry.

■ JTAG 1149.1 compatible test access port

■ Delay Lock Loop (DLL) for accurate data placement

Selection Guide

Description

300 MHz

300

278 MHz

278

250 MHz

250

200 MHz

200

167 MHz

167

Unit

MHz

Maximum Operating Frequency

Maximum Operating Current

930

865

790

655

570

940

870

795

660

575

x18

x36

1020

1230

950

865

715

615

1140

1040

850

725

Cypress Semiconductor Corporation

Document Number: 001-06985 Rev. *C

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised September 27, 2007

[+] Feedback

12 3 4 5 6 7...31

中文翻译

下载PDF

与CY7C1511AV18-300BZI相关器件

型号	品牌	获取价格	描述	数据表
CY7C1511AV18-300BZXC	CYPRESS	获取价格	72-Mbit QDR⑩-II SRAM 4-Word Burst Architectur
CY7C1511AV18-300BZXI	CYPRESS	获取价格	72-Mbit QDR⑩-II SRAM 4-Word Burst Architectur
CY7C1511JV18	CYPRESS	获取价格	72-Mbit QDR-II SRAM 4-Word Burst Architecture
CY7C1511JV18-167BZC	CYPRESS	获取价格	72-Mbit QDR-II SRAM 4-Word Burst Architecture
CY7C1511JV18-167BZI	CYPRESS	获取价格	72-Mbit QDR-II SRAM 4-Word Burst Architecture
CY7C1511JV18-167BZXC	CYPRESS	获取价格	72-Mbit QDR-II SRAM 4-Word Burst Architecture
CY7C1511JV18-167BZXI	CYPRESS	获取价格	72-Mbit QDR-II SRAM 4-Word Burst Architecture
CY7C1511JV18-250BZC	CYPRESS	获取价格	72-Mbit QDR-II SRAM 4-Word Burst Architecture
CY7C1511JV18-250BZI	CYPRESS	获取价格	72-Mbit QDR-II SRAM 4-Word Burst Architecture
CY7C1511JV18-250BZXC	CYPRESS	获取价格	72-Mbit QDR-II SRAM 4-Word Burst Architecture

与CY7C1511AV18-300BZI相关文章

MBRS340T3G手册解读：参数说明、产品特性及应用
2024-06-28

5
PMOS管背靠背连接：串联还是并联？
2024-06-28

7
高压电解电容的分类与选型策略
2024-06-28

8
数码管：基本概念、分类、技术发展及市场趋势
2024-06-27

13

产品中心

服务支持

精选活动

关于我们

帮助中心

CY7C1511AV18-300BZI

CY7C1511AV18-300BZI 技术参数

CY7C1511AV18-300BZI 数据手册

与CY7C1511AV18-300BZI相关器件

与CY7C1511AV18-300BZI相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

CY7C1511AV18-300BZI

CY7C1511AV18-300BZI 技术参数

CY7C1511AV18-300BZI 数据手册

与CY7C1511AV18-300BZI相关器件

与CY7C1511AV18-300BZI相关文章

您还可以找

您在本页遇到什么问题？