Datasheet > 存储 > SRAM> CY7C1511AV18-200BZXC

CY7C1511AV18-200BZXC

更新时间： 2024-11-27 05:19:47

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		存储内存集成电路静态存储器时钟
页数	文件大小	规格书
31页	709K
描述
72-Mbit QDR⑩-II SRAM 4-Word Burst Architecture

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技术参数
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CY7C1511AV18-200BZXC 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	BGA	包装说明：	LBGA, BGA165,11X15,40
针数：	165	Reach Compliance Code：	compliant
ECCN代码：	3A991.B.2.A	HTS代码：	8542.32.00.41
风险等级：	5.84	Is Samacsys：	N
最长访问时间：	0.45 ns	其他特性：	PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)：	200 MHz	I/O 类型：	SEPARATE
JESD-30 代码：	R-PBGA-B165	JESD-609代码：	e1
长度：	17 mm	内存密度：	67108864 bit
内存集成电路类型：	QDR SRAM	内存宽度：	8
湿度敏感等级：	3	功能数量：	1
端子数量：	165	字数：	8388608 words
字数代码：	8000000	工作模式：	SYNCHRONOUS
最高工作温度：	70 °C	最低工作温度：
组织：	8MX8	输出特性：	3-STATE
封装主体材料：	PLASTIC/EPOXY	封装代码：	LBGA
封装等效代码：	BGA165,11X15,40	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, LOW PROFILE	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	260	电源：	1.5/1.8,1.8 V
认证状态：	Not Qualified	座面最大高度：	1.4 mm
最小待机电流：	1.7 V	子类别：	SRAMs
最大压摆率：	0.655 mA	最大供电电压 (Vsup)：	1.9 V
最小供电电压 (Vsup)：	1.7 V	标称供电电压 (Vsup)：	1.8 V
表面贴装：	YES	技术：	CMOS
温度等级：	COMMERCIAL	端子面层：	Tin/Silver/Copper (Sn/Ag/Cu)
端子形式：	BALL	端子节距：	1 mm
端子位置：	BOTTOM	处于峰值回流温度下的最长时间：	40
宽度：	15 mm	Base Number Matches：	1

CY7C1511AV18-200BZXC 数据手册

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CY7C1511AV18, CY7C1526AV18

CY7C1513AV18, CY7C1515AV18

72-Mbit QDR™-II SRAM 4-Word

Burst Architecture

Features

Configurations

■ Separate independent read and write data ports

❐ Supports concurrent transactions

CY7C1511AV18 – 8M x 8

CY7C1526AV18 – 8M x 9

CY7C1513AV18 – 4M x 18

CY7C1515AV18 – 2M x 36

■ 300 MHz clock for high bandwidth

■ 4-word burst for reducing address bus frequency

Functional Description

■ DoubleDataRate(DDR)interfacesonbothreadandwriteports

(data transferred at 600 MHz) at 300 MHz

The CY7C1511AV18, CY7C1526AV18, CY7C1513AV18, and

CY7C1515AV18 are 1.8V Synchronous Pipelined SRAMs,

equipped with QDR™-II architecture. QDR-II architecture

consists of two separate ports: the read port and the write port to

access the memory array. The read port has dedicated data

outputs to support read operations and the write port has

dedicated data inputs to support write operations. QDR-II archi-

tecture has separate data inputs and data outputs to completely

eliminate the need to “turn-around” the data bus that exists with

common IO devices. Each port can be accessed through a

common address bus. Addresses for read and write addresses

are latched on alternate rising edges of the input (K) clock.

Accesses to the QDR-II read and write ports are completely

independent of one another. To maximize data throughput, both

read and write ports are equipped with DDR interfaces. Each

address location is associated with four 8-bit words

(CY7C1511AV18), 9-bit words (CY7C1526AV18), 18-bit words

(CY7C1513AV18), or 36-bit words (CY7C1515AV18) that burst

sequentially into or out of the device. Because data can be trans-

ferred into and out of the device on every rising edge of both input

clocks (K and K and C and C), memory bandwidth is maximized

while simplifying system design by eliminating bus

“turn-arounds”.

■ Two input clocks (K and K) for precise DDR timing

❐ SRAM uses rising edges only

■ Two input clocks for output data (C and C) to minimize clock

skew and flight time mismatches

■ Echo clocks (CQ and CQ) simplify data capture in high-speed

systems

■ Single multiplexed address input bus latches address inputs

for read and write ports

■ Separate port selects for depth expansion

■ Synchronous internally self-timed writes

■ QDR-II operates with 1.5 cycle read latency when the Delay

Lock Loop (DLL) is enabled

■ Operates as a QDR-I device with 1 cycle read latency in DLL

off mode

■ Available in x 8, x 9, x 18, and x 36 configurations

■ Full data coherency, providing most current data

■ Core V_DD= 1.8 (± 0.1V); IO V_DDQ= 1.4V to V_DD

■ Available in 165-Ball FBGA package (15 x 17 x 1.4 mm)

■ Offered in both Pb-free and non Pb-free packages

■ Variable drive HSTL output buffers

Depth expansion is accomplished with port selects, which

enables each port to operate independently.

All synchronous inputs pass through input registers controlled by

the K or K input clocks. All data outputs pass through output

registers controlled by the C or C (or K or K in a single clock

domain) input clocks. Writes are conducted with on-chip

synchronous self-timed write circuitry.

■ JTAG 1149.1 compatible test access port

■ Delay Lock Loop (DLL) for accurate data placement

Selection Guide

Description

300 MHz

300

278 MHz

278

250 MHz

250

200 MHz

200

167 MHz

167

Unit

MHz

Maximum Operating Frequency

Maximum Operating Current

930

865

790

655

570

940

870

795

660

575

x18

x36

1020

1230

950

865

715

615

1140

1040

850

725

Cypress Semiconductor Corporation

Document Number: 001-06985 Rev. *C

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised September 27, 2007

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与CY7C1511AV18-200BZXC相关器件

型号	品牌	获取价格	描述	数据表
CY7C1511AV18-200BZXI	CYPRESS	获取价格	72-Mbit QDR⑩-II SRAM 4-Word Burst Architectur
CY7C1511AV18-250BZC	CYPRESS	获取价格	72-Mbit QDR⑩-II SRAM 4-Word Burst Architectur
CY7C1511AV18-250BZI	CYPRESS	获取价格	72-Mbit QDR⑩-II SRAM 4-Word Burst Architectur
CY7C1511AV18-250BZXC	CYPRESS	获取价格	72-Mbit QDR⑩-II SRAM 4-Word Burst Architectur
CY7C1511AV18-250BZXI	CYPRESS	获取价格	72-Mbit QDR⑩-II SRAM 4-Word Burst Architectur
CY7C1511AV18-278BZC	CYPRESS	获取价格	72-Mbit QDR⑩-II SRAM 4-Word Burst Architectur
CY7C1511AV18-278BZI	CYPRESS	获取价格	72-Mbit QDR⑩-II SRAM 4-Word Burst Architectur
CY7C1511AV18-278BZXC	CYPRESS	获取价格	72-Mbit QDR⑩-II SRAM 4-Word Burst Architectur
CY7C1511AV18-278BZXI	CYPRESS	获取价格	72-Mbit QDR⑩-II SRAM 4-Word Burst Architectur
CY7C1511AV18-300BZC	CYPRESS	获取价格	72-Mbit QDR⑩-II SRAM 4-Word Burst Architectur

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