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CY7C149-45LMB PDF预览

CY7C149-45LMB

更新时间: 2024-09-19 06:51:43
品牌 Logo 应用领域
赛普拉斯 - CYPRESS /
页数 文件大小 规格书
9页 214K
描述
1Kx4 Static RAM

CY7C149-45LMB 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:LCC包装说明:QCCN, LCC18,.3X.43
针数:18Reach Compliance Code:not_compliant
ECCN代码:3A001.A.2.CHTS代码:8542.32.00.41
风险等级:5.81最长访问时间:45 ns
I/O 类型:COMMONJESD-30 代码:R-CQCC-N18
JESD-609代码:e0长度:10.795 mm
内存密度:4096 bit内存集成电路类型:STANDARD SRAM
内存宽度:4功能数量:1
端口数量:1端子数量:18
字数:1024 words字数代码:1000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:1KX4
输出特性:3-STATE可输出:NO
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装代码:QCCN
封装等效代码:LCC18,.3X.43封装形状:RECTANGULAR
封装形式:CHIP CARRIER并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
认证状态:Not Qualified筛选级别:MIL-STD-883
座面最大高度:1.905 mm最大待机电流:0.11 A
最小待机电流:4.5 V子类别:SRAMs
最大压摆率:0.11 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子面层:Tin/Lead (Sn/Pb)
端子形式:NO LEAD端子节距:1.27 mm
端子位置:QUAD处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:7.36 mmBase Number Matches:1

CY7C149-45LMB 数据手册

 浏览型号CY7C149-45LMB的Datasheet PDF文件第2页浏览型号CY7C149-45LMB的Datasheet PDF文件第3页浏览型号CY7C149-45LMB的Datasheet PDF文件第4页浏览型号CY7C149-45LMB的Datasheet PDF文件第5页浏览型号CY7C149-45LMB的Datasheet PDF文件第6页浏览型号CY7C149-45LMB的Datasheet PDF文件第7页 
49  
CY7C148  
CY7C149  
1Kx4 Static RAM  
sion is provided by an active LOW chip select (CS) input and  
three-state outputs. The CY7C148 remains in a low-power  
mode as long as the device remains unselected; i.e., (CS) is  
HIGH, thus reducing the average power requirements of the  
device. The chip select (CS) of the CY7C149 does not affect  
the power dissipation of the device.  
Features  
• Automatic power-down when deselected (7C148)  
• CMOS for optimum speed/power  
• 25-ns access time  
• Low active power  
Writing to the device is accomplished when the chip select  
(CS) and write enable (WE) inputs are both LOW. Data on the  
I/O pins (I/O0 through I/O3) is written into the memory loca-  
tions specified on the address pins (A0 through A9).  
— 440 mW (commercial)  
— 605 mW (military)  
• Low standby power (7C148)  
— 82.5 mW (25-ns version)  
— 55 mW (all others)  
Reading the device is accomplished by taking chip select (CS)  
LOW while write enable (WE) remains HIGH. Under these  
conditions, the contents of the location specified on the  
address pins will appear on the four data I/O pins.  
5-volt power supply ± 10% tolerance, both commercial  
and military  
TTL-compatible inputs and outputs  
The I/O pins remain in a high-impedance state when chip se-  
lect (CS) is HIGH or write enable (WE) is LOW.  
Functional Description  
The CY7C148 and CY7C149 are high-performance CMOS  
static RAMs organized as 1024 by 4 bits. Easy memory expan-  
Logic Block Diagram  
PinConfigurations  
DIP  
Top View  
A
V
6
1
2
3
4
5
6
7
8
9
CC  
18  
17  
16  
15  
A
5
A
4
A
3
A
A
A
7
A
8
A
9
I/O  
I/O  
I/O  
I/O  
INPUTBUFFER  
0
1
14  
13  
12  
11  
10  
0
1
2
3
A
2
A
A
8
9
I/O  
0
CS  
WE  
GND  
A
I/O  
1
64x 64  
ARRAY  
7
A
C1482  
6
I/O  
2
LCC  
A
5
Top View  
A
4
I/O  
3
CS  
2 1 1817  
POWER  
DOWN  
(7C148)  
A
A
3
4
5
6
7
16  
4
8
COLUMN  
A
A
15  
13  
9
DECODER  
A
14 I/O  
10  
WE  
0
1
2
A
13  
12  
I/O  
I/O  
11  
A
12  
A
3
8 91011  
A A  
A
0
2
1
C1481  
C1483  
Selection Guide  
7C14825  
7C14835  
7C14845  
7C14925  
7C14935  
7C14945  
Maximum Access Time (ns)  
25  
90  
35  
80  
45  
80  
25  
90  
35  
80  
45  
80  
Maximum Operating  
Current (mA)  
Commercial  
Military  
110  
10  
110  
10  
110  
110  
Maximum Standby  
Current (mA)  
Commercial  
Military  
15  
10  
10  
Cypress Semiconductor Corporation  
3901 North First Street  
San Jose  
CA 95134  
408-943-2600  
Document #: 38-05059 Rev. **  
Revised September 18, 2001  
[+] Feedback  

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