5秒后页面跳转
捷配首页

Datasheet > 存储 > SRAM> CY7C1483V33-100BZXC
CY7C1483V33-100BZXC PDF预览

CY7C1483V33-100BZXC

更新时间： 2024-09-19 05:19:43
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器
页数 文件大小 规格书
30页 1269K
描述
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM

阅读下载

中文翻译

获取价格

CY7C1483V33-100BZXC 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：BGA
包装说明：LBGA, BGA165,11X15,40针数：165
Reach Compliance Code：compliantECCN代码：3A991.B.2.A
HTS代码：8542.32.00.41风险等级：5.84
最长访问时间：8.5 ns其他特性：FLOW-THROUGH ARCHITECTURE
最大时钟频率 (fCLK)：100 MHzI/O 类型：COMMON
JESD-30 代码：R-PBGA-B165JESD-609代码：e1
长度：17 mm内存密度：75497472 bit
内存集成电路类型：CACHE SRAM内存宽度：18
湿度敏感等级：3功能数量：1
端子数量：165字数：4194304 words
字数代码：4000000工作模式：SYNCHRONOUS
最高工作温度：70 °C最低工作温度：
组织：4MX18输出特性：3-STATE
封装主体材料：PLASTIC/EPOXY封装代码：LBGA
封装等效代码：BGA165,11X15,40封装形状：RECTANGULAR
封装形式：GRID ARRAY, LOW PROFILE并行/串行：PARALLEL
峰值回流温度（摄氏度）：260电源：2.5/3.3,3.3 V
认证状态：Not Qualified座面最大高度：1.4 mm
最小待机电流：3.14 V子类别：SRAMs
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：3.135 V
标称供电电压 (Vsup)：3.3 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子面层：Tin/Silver/Copper (Sn/Ag/Cu)端子形式：BALL
端子节距：1 mm端子位置：BOTTOM
处于峰值回流温度下的最长时间：20宽度：15 mm
Base Number Matches：1

CY7C1483V33-100BZXC 数据手册

 浏览型号CY7C1483V33-100BZXC的Datasheet PDF文件第2页浏览型号CY7C1483V33-100BZXC的Datasheet PDF文件第3页浏览型号CY7C1483V33-100BZXC的Datasheet PDF文件第4页浏览型号CY7C1483V33-100BZXC的Datasheet PDF文件第5页浏览型号CY7C1483V33-100BZXC的Datasheet PDF文件第6页浏览型号CY7C1483V33-100BZXC的Datasheet PDF文件第7页 
CY7C1481V33  
CY7C1483V33  
CY7C1487V33  
72-Mbit (2M x 36/4M x 18/1M x 72)  
Flow-Through SRAM  
Features  
Functional Description[1]  
• Supports 133 MHz bus operations  
• 2M x 36/4M x 18/1M x 72 common IO  
The CY7C1481V33/CY7C1483V33/CY7C1487V33 is a 3.3V,  
2M x 36/4M x 18/1M x 72 Synchronous Flow-through SRAM  
designed to interface with high speed microprocessors with  
minimum glue logic. Maximum access delay from clock rise is  
6.5 ns (133 MHz version). A two-bit on-chip counter captures  
the first address in a burst and increments the address  
automatically for the rest of the burst access. All synchronous  
• 3.3V core power supply (VDD  
)
• 2.5V or 3.3V I/O supply (VDDQ  
• Fast clock-to-output times  
— 6.5 ns (133 MHz version)  
)
inputs are gated by registers controlled by  
a
• Provide high-performance 2-1-1-1 access rate  
• User selectable burst counter supporting Intel® Pentium®  
interleaved or linear burst sequences  
positive-edge-triggered Clock Input (CLK). The synchronous  
inputs include all addresses, all data inputs, address-pipelining  
Chip Enable (CE1), depth-expansion Chip Enables (CE2 and  
CE3), Burst Control inputs (ADSC, ADSP, and ADV), Write  
Enables (BWx and BWE), and Global Write (GW).  
Asynchronous inputs include the Output Enable (OE) and the  
ZZ pin.  
• Separate processor and controller address strobes  
• Synchronous self timed write  
• Asynchronous output enable  
• CY7C1481V33, CY7C1483V33 available in  
JEDEC-standard Pb-free 100-pin TQFP, Pb-free and  
non-Pb-free 165-ball FBGA package. CY7C1487V33  
available in Pb-free and non-Pb-free 209 ball FBGA  
package  
The CY7C1481V33/CY7C1483V33/CY7C1487V33 allows  
either interleaved or linear burst sequences, selected by the  
MODE input pin. A HIGH selects an interleaved burst  
sequence, while a LOW selects a linear burst sequence. Burst  
accesses can be initiated with the Processor Address Strobe  
(ADSP) or the cache Controller Address Strobe (ADSC)  
inputs. Address advancement is controlled by the Address  
Advancement (ADV) input.  
• IEEE 1149.1 JTAG-Compatible Boundary Scan  
• “ZZ” Sleep Mode option  
Addresses and chip enables are registered at rising edge of  
clock when either Address Strobe Processor (ADSP) or  
Address Strobe Controller (  
burst addresses can be internally generated as controlled by  
the Advance pin (ADV).  
) are active. Subsequent  
ADSC  
The CY7C1481V33/CY7C1483V33/CY7C1487V33 operates  
from a +3.3V core power supply while all outputs may operate  
with either a +2.5 or +3.3V supply. All inputs and outputs are  
JEDEC standard JESD8-5 compatible.  
Selection Guide  
133 MHz  
6.5  
100 MHz  
8.5  
Unit  
ns  
Maximum Access Time  
Maximum Operating Current  
Maximum CMOS Standby Current  
335  
305  
mA  
mA  
150  
150  
Note  
1. For best practices recommendations, refer to the Cypress application note AN1064, SRAM System Guidelines.  
Cypress Semiconductor Corporation  
Document #: 38-05284 Rev. *H  
•
198 Champion Court  
•
San Jose, CA 95134-1709  
•
408-943-2600  
Revised May 01, 2007  
[+] Feedback  
1234567...30

中文翻译

下载PDF

与CY7C1483V33-100BZXC相关器件

型号 品牌 获取价格 描述 数据表
CY7C1483V33-100BZXI CYPRESS

获取价格

 		72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM
CY7C1483V33-117AC CYPRESS

获取价格

 		2M x 36/4M x 18/1M x 72 Flow-through SRAM
CY7C1483V33-117BGC CYPRESS

获取价格

 		2M x 36/4M x 18/1M x 72 Flow-through SRAM
CY7C1483V33-117BZC CYPRESS

获取价格

 		2M x 36/4M x 18/1M x 72 Flow-through SRAM
CY7C1483V33-133AC CYPRESS

获取价格

 		2M x 36/4M x 18/1M x 72 Flow-through SRAM
CY7C1483V33-133AXC CYPRESS

获取价格

 		72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM
CY7C1483V33-133AXI CYPRESS

获取价格

 		72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM
CY7C1483V33-133BGC CYPRESS

获取价格

 		2M x 36/4M x 18/1M x 72 Flow-through SRAM
CY7C1483V33-133BZC CYPRESS

获取价格

 		2M x 36/4M x 18/1M x 72 Flow-through SRAM
CY7C1483V33-133BZI CYPRESS

获取价格

 		72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM

与CY7C1483V33-100BZXC相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证