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CY7C1483V25-100BZXI PDF预览

CY7C1483V25-100BZXI

更新时间： 2024-09-19 05:19:43
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器
页数 文件大小 规格书
30页 1297K
描述
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM

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中文翻译

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CY7C1483V25-100BZXI 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：BGA
包装说明：LBGA, BGA165,11X15,40针数：165
Reach Compliance Code：compliantECCN代码：3A991.B.2.A
HTS代码：8542.32.00.41风险等级：5.84
最长访问时间：8.5 ns其他特性：FLOW-THROUGH ARCHITECTURE
最大时钟频率 (fCLK)：100 MHzI/O 类型：COMMON
JESD-30 代码：R-PBGA-B165JESD-609代码：e1
长度：17 mm内存密度：75497472 bit
内存集成电路类型：CACHE SRAM内存宽度：18
湿度敏感等级：3功能数量：1
端子数量：165字数：4194304 words
字数代码：4000000工作模式：SYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：4MX18输出特性：3-STATE
封装主体材料：PLASTIC/EPOXY封装代码：LBGA
封装等效代码：BGA165,11X15,40封装形状：RECTANGULAR
封装形式：GRID ARRAY, LOW PROFILE并行/串行：PARALLEL
峰值回流温度（摄氏度）：260电源：1.8/2.5,2.5 V
认证状态：Not Qualified座面最大高度：1.4 mm
最小待机电流：2.38 V子类别：SRAMs
最大供电电压 (Vsup)：2.625 V最小供电电压 (Vsup)：2.375 V
标称供电电压 (Vsup)：2.5 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：Tin/Silver/Copper (Sn/Ag/Cu)端子形式：BALL
端子节距：1 mm端子位置：BOTTOM
处于峰值回流温度下的最长时间：20宽度：15 mm
Base Number Matches：1

CY7C1483V25-100BZXI 数据手册

 浏览型号CY7C1483V25-100BZXI的Datasheet PDF文件第2页浏览型号CY7C1483V25-100BZXI的Datasheet PDF文件第3页浏览型号CY7C1483V25-100BZXI的Datasheet PDF文件第4页浏览型号CY7C1483V25-100BZXI的Datasheet PDF文件第5页浏览型号CY7C1483V25-100BZXI的Datasheet PDF文件第6页浏览型号CY7C1483V25-100BZXI的Datasheet PDF文件第7页 
CY7C1481V25  
CY7C1483V25  
CY7C1487V25  
72-Mbit (2M x 36/4M x 18/1M x 72)  
Flow-Through SRAM  
Features  
Functional Description[1]  
• Supports 133 MHz bus operations  
• 2M x 36/4M x 18/1M x 72 common IO  
The CY7C1481V25/CY7C1483V25/CY7C1487V25 is a 2.5V,  
2M x 36/4M x 18/1M x 72 Synchronous Flow-through SRAM  
designed to interface with high-speed microprocessors with  
minimum glue logic. Maximum access delay from clock rise is  
6.5 ns (133-MHz version). A 2-bit on-chip counter captures the  
first address in a burst and increments the address automati-  
cally for the rest of the burst access. All synchronous inputs  
are gated by registers controlled by a positive edge triggered  
Clock Input (CLK). The synchronous inputs include all  
addresses, all data inputs, address pipelining Chip Enable  
(CE1), depth expansion Chip Enables (CE2 and CE3), Burst  
• 2.5V core power supply (VDD  
)
• 2.5V or 1.8V IO supply (VDDQ  
• Fast clock-to-output time  
— 6.5 ns (133-MHz version)  
)
• Provide high-performance 2-1-1-1 access rate  
• User selectable burst counter supporting Intel® Pentium®  
interleaved or linear burst sequences  
Control inputs (ADSC, ADSP, and ADV), Write Enables (BW  
and BWE), and Global Write (GW). Asynchronous inputs  
,
x
• Separate processor and controller address strobes  
• Synchronous self timed write  
include the Output Enable (OE) and the ZZ pin.  
• Asynchronous output enable  
The CY7C1481V25/CY7C1483V25/CY7C1487V25 enables  
either interleaved or linear burst sequences, selected by the  
MODE input pin. A HIGH selects an interleaved burst  
sequence, while a LOW selects a linear burst sequence. Burst  
accesses can be initiated with the Processor Address Strobe  
(ADSP) or the cache Controller Address Strobe  
inputs. Address advancement is controlled by the Address  
Advancement (ADV) input.  
• CY7C1481V25, CY7C1483V25 available in  
JEDEC-standard Pb-free 100-pin TQFP, Pb-free and  
non-Pb-free 165-ball FBGA package. CY7C1487V25  
available in Pb-free and non-Pb-free 209-ball FBGA  
package  
(ADSC)  
• IEEE 1149.1 JTAG-Compatible Boundary Scan  
• “ZZ” Sleep Mode option  
Addresses and chip enables are registered at rising edge of  
clock when either Address Strobe Processor (ADSP) or  
Address Strobe Controller (ADSC) are active. Subsequent  
burst addresses can be internally generated as controlled by  
the Advance pin (ADV).  
The CY7C1481V25/CY7C1483V25/CY7C1487V25 operates  
from a +2.5V core power supply while all outputs may operate  
with either a +2.5 or +1.8V supply. All inputs and outputs are  
JEDEC-standard JESD8-5-compatible.  
Selection Guide  
133 MHz  
6.5  
100 MHz  
8.5  
Unit  
ns  
Maximum Access Time  
Maximum Operating Current  
Maximum CMOS Standby Current  
305  
275  
mA  
mA  
120  
120  
Note  
1. For best practices recommendations, refer to the Cypress application note System Design Guidelines at www.cypress.com.  
Cypress Semiconductor Corporation  
Document #: 38-05281 Rev. *H  
•
198 Champion Court  
•
San Jose, CA 95134-1709  
•
408-943-2600  
Revised April 24, 2007  
[+] Feedback  
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中文翻译

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