5秒后页面跳转
捷配首页

Datasheet > 存储 > SRAM> CY7C1475V33-133BGXC
CY7C1475V33-133BGXC PDF预览

CY7C1475V33-133BGXC

更新时间： 2024-09-17 22:22:11
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器
页数 文件大小 规格书
29页 376K
描述
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture

阅读下载

中文翻译

获取价格

CY7C1475V33-133BGXC 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：BGA包装说明：BGA, BGA209,11X19,40
针数：209Reach Compliance Code：compliant
ECCN代码：3A991.B.2.AHTS代码：8542.32.00.41
风险等级：5.84最长访问时间：6.5 ns
其他特性：FLOW-THROUGH ARCHITECTURE最大时钟频率 (fCLK)：133 MHz
I/O 类型：COMMONJESD-30 代码：R-PBGA-B209
JESD-609代码：e1长度：22 mm
内存密度：75497472 bit内存集成电路类型：ZBT SRAM
内存宽度：72湿度敏感等级：3
功能数量：1端子数量：209
字数：1048576 words字数代码：1000000
工作模式：SYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：1MX72
输出特性：3-STATE封装主体材料：PLASTIC/EPOXY
封装代码：BGA封装等效代码：BGA209,11X19,40
封装形状：RECTANGULAR封装形式：GRID ARRAY
并行/串行：PARALLEL峰值回流温度（摄氏度）：260
电源：2.5/3.3,3.3 V认证状态：Not Qualified
座面最大高度：1.96 mm最小待机电流：3.14 V
子类别：SRAMs最大供电电压 (Vsup)：3.63 V
最小供电电压 (Vsup)：3.135 V标称供电电压 (Vsup)：3.3 V
表面贴装：YES技术：CMOS
温度等级：COMMERCIAL端子面层：Tin/Silver/Copper (Sn/Ag/Cu)
端子形式：BALL端子节距：1 mm
端子位置：BOTTOM处于峰值回流温度下的最长时间：20
宽度：14 mmBase Number Matches：1

CY7C1475V33-133BGXC 数据手册

 浏览型号CY7C1475V33-133BGXC的Datasheet PDF文件第2页浏览型号CY7C1475V33-133BGXC的Datasheet PDF文件第3页浏览型号CY7C1475V33-133BGXC的Datasheet PDF文件第4页浏览型号CY7C1475V33-133BGXC的Datasheet PDF文件第5页浏览型号CY7C1475V33-133BGXC的Datasheet PDF文件第6页浏览型号CY7C1475V33-133BGXC的Datasheet PDF文件第7页 
CY7C1471V33  
CY7C1473V33  
CY7C1475V33  
PRELIMINARY  
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through  
SRAM with NoBL™ Architecture  
• JTAG boundary scan for BGA and fBGA packages  
• Burst Capability—linear or interleaved burst order  
Features  
• No Bus Latency™ (NoBL™) architecture eliminates  
dead cycles between write and read cycles.  
• Low standby power  
Functional Description[1]  
• Can support up to 133-MHz bus operations with zero  
wait states  
The CY7C1471V33, CY7C1473V33 and CY7C1475V33 are  
3.3V, 2M x 36/4M x 18/1M x 72 Synchronous Flow-through  
Burst SRAMs designed specifically to support unlimited true  
back-to-back Read/Write operations without the insertion of  
wait states. The CY7C1471V33, CY7C1473V33 and  
CY7C1475V33 are equipped with the advanced No Bus  
Latency (NoBL) logic required to enable consecutive  
Read/Write operations with data being transferred on every  
clock cycle. This feature dramatically improves the throughput  
of data through the SRAM, especially in systems that require  
frequent Write-Read transitions.  
• Data is transferred on every clock  
• Pin compatible and functionally equivalent to ZBT™  
devices  
• Internally self-timed output buffer control to eliminate  
the need to use OE  
• Registered inputs for flow-through operation  
• Byte Write capability  
• 3.3V/2.5V I/O power supply  
• Fast clock-to-output times  
— 6.5 ns (for 133-MHz device)  
— 8.5 ns (for 100-MHz device)  
All synchronous inputs pass through input registers controlled  
by the rising edge of the clock. The clock input is qualified by  
the Clock Enable (CEN) signal, which when deasserted  
suspends operation and extends the previous clock cycle.  
Maximum access delay from the clock rise is 6.5 ns (133-MHz  
device).  
• Clock Enable (CEN) pin to enable clock and suspend  
operation  
• Synchronous self-timed writes  
• Asynchronous Output Enable  
Write operations are controlled by the two or four Byte Write  
Select (BWX) and a Write Enable (WE) input. All writes are  
conducted with on-chip synchronous self-timed write circuitry.  
• Offered in JEDEC-standard lead-free 100 TQFP, and  
165-ball fBGA packages for CY7C1471V33 and  
CY7C1473V33. 209-ball fBGA package for  
CY7C1475V33.  
Three synchronous Chip Enables (CE1, CE2, CE3) and an  
asynchronous Output Enable (OE) provide for easy bank  
selection and output tri-state control. In order to avoid bus  
contention, the output drivers are synchronously tri-stated  
during the data portion of a write sequence.  
• Three chip enables for simple depth expansion.  
• Automatic Power-down feature available using ZZ  
mode or CE deselect.  
Selection Guide  
133 MHz  
6.5  
100 MHz  
8.5  
Unit  
ns  
Maximum Access Time  
Maximum Operating Current  
335  
305  
mA  
mA  
Maximum CMOS Standby Current  
150  
150  
Note:  
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.  
Cypress Semiconductor Corporation  
Document #: 38-05288 Rev. *E  
•
3901 North First Street  
•
San Jose, CA 95134  
•
408-943-2600  
Revised December 5, 2004  
1234567...29

中文翻译

下载PDF

与CY7C1475V33-133BGXC相关器件

型号 品牌 获取价格 描述 数据表
CY7C1475V33-133BGXI CYPRESS

获取价格

 		72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Throug
CY7C148 CYPRESS

获取价格

 		1Kx4 Static RAM
CY7C148_09 CYPRESS

获取价格

 		1Kx4 Static RAM
CY7C1480BV25 CYPRESS

获取价格

 		72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM
CY7C1480BV25_11 CYPRESS

获取价格

 		72-Mbit (2 M x 36/4 M x 18/1 M x 72) Pipelined Sync SRAM
CY7C1480BV25-167AXC CYPRESS

获取价格

 		72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM
CY7C1480BV25-167AXI CYPRESS

获取价格

 		72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM
CY7C1480BV25-167BZC CYPRESS

获取价格

 		72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM
CY7C1480BV25-167BZI CYPRESS

获取价格

 		72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM
CY7C1480BV25-167BZXC CYPRESS

获取价格

 		72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM

与CY7C1475V33-133BGXC相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证