Datasheet > 存储 > SRAM> CY7C1471BV33-133AXC

CY7C1471BV33-133AXC

更新时间： 2024-11-16 06:51:43

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器
页数	文件大小	规格书
32页	884K
描述
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture

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CY7C1471BV33

CY7C1473BV33, CY7C1475BV33

72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through

SRAM with NoBL™ Architecture

Features

Functional Description

■ No Bus Latency™ (NoBL™) architecture eliminates dead

cycles between write and read cycles

The CY7C1471BV33, CY7C1473BV33, and CY7C1475BV33

are 3.3V, 2M x 36/4M x 18/1M x 72 synchronous flow through

burst SRAMs designed specifically to support unlimited true

back-to-back read or write operations without the insertion of

wait states. The CY7C1471BV33, CY7C1473BV33, and

CY7C1475BV33 are equipped with the advanced No Bus

Latency (NoBL) logic. NoBL™ is required to enable consecutive

read or write operations with data being transferred on every

clock cycle. This feature dramatically improves the throughput of

data through the SRAM, especially in systems that require

frequent write-read transitions.

■ Supports up to 133 MHz bus operations with zero wait states

■ Data is transferred on every clock

■ Pin compatible and functionally equivalent to ZBT™ devices

■ Internally self timed output buffer control to eliminate the need

to use OE

■ Registered inputs for flow through operation

■ Byte Write capability

All synchronous inputs pass through input registers controlled by

the rising edge of the clock. The clock input is qualified by the

Clock Enable (CEN) signal, which when deasserted suspends

operation and extends the previous clock cycle. Maximum

access delay from the clock rise is 6.5 ns (133 MHz device).

■ 3.3V/2.5V IO supply (V_DDQ

)

■ Fast clock-to-output times

❐ 6.5 ns (for 133 MHz device)

Write operations are controlled by two or four Byte Write Select

(BW_X) and a Write Enable (WE) input. All writes are conducted

with on-chip synchronous self timed write circuitry.

■ Clock Enable (CEN) pin to enable clock and suspend operation

■ Synchronous self-timed writes

Three synchronous Chip Enables (CE₁, CE₂, CE₃) and an

asynchronous Output Enable (OE) provide for easy bank

selection and output tri-state control. To avoid bus contention,

the output drivers are synchronously tri-stated during the data

portion of a write sequence. For best practice recommendations,

refer to the Cypress application note AN1064 “SRAM System

Guidelines”.

■ Asynchronous Output Enable (OE)

■ CY7C1471BV33, CY7C1473BV33 available in

JEDEC-standard Pb-free 100-pin TQFP, Pb-free and

non-Pb-free 165-Ball FBGA package. CY7C1475BV33

available in Pb-free and non-Pb-free 209-Ball FBGA package

■ Three Chip Enables (CE₁, CE₂, CE₃) for simple depth

expansion

■ Automatic power down feature available using ZZ mode or CE

deselect

■ IEEE 1149.1 JTAG Boundary Scan compatible

■ Burst Capability—linear or interleaved burst order

■ Low standby power

Selection Guide

Description

Maximum Access Time

133 MHz

6.5

117 MHz

8.5

Unit

Maximum Operating Current

Maximum CMOS Standby Current

305

275

120

Cypress Semiconductor Corporation

Document #: 001-15029 Rev. *B

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised March 05, 2008

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CY7C1471BV33-133AXC 替代型号

型号	品牌	替代类型	描述	数据表
CY7C1471BV33-117AXC	CYPRESS	完全替代	72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture

与CY7C1471BV33-133AXC相关器件

型号	品牌	获取价格	描述	数据表
CY7C1471BV33-133AXCT	INFINEON	获取价格	Synchronous SRAM
CY7C1471BV33-133AXI	CYPRESS	获取价格	72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture
CY7C1471BV33-133BZC	CYPRESS	获取价格	72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture
CY7C1471BV33-133BZI	CYPRESS	获取价格	72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture
CY7C1471BV33-133BZI	INFINEON	获取价格	Synchronous SRAM
CY7C1471BV33-133BZXC	CYPRESS	获取价格	72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture
CY7C1471BV33-133BZXI	CYPRESS	获取价格	72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture
CY7C1471V25	CYPRESS	获取价格	72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture
CY7C1471V25_07	CYPRESS	获取价格	72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Throug
CY7C1471V25_13	CYPRESS	获取价格	72-Mbit (2 M x 36) Flow-Through SRAM with NoB

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