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CY7C1471BV25-133AXC PDF预览

CY7C1471BV25-133AXC

更新时间: 2024-11-16 05:19:39
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器
页数 文件大小 规格书
30页 848K
描述
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL⑩ Architecture

CY7C1471BV25-133AXC 数据手册

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CY7C1471BV25  
CY7C1473BV25, CY7C1475BV25  
72-Mbit (2M x 36/4M x 18/1M x 72)  
Flow-Through SRAM with NoBL™ Architecture  
Features  
Functional Description  
No Bus Latency™ (NoBL™) architecture eliminates dead  
cycles between write and read cycles  
The CY7C1471BV25, CY7C1473BV25, and CY7C1475BV25  
are 2.5V, 2M x 36/4M x 18/1M x 72 synchronous flow through  
burst SRAMs designed specifically to support unlimited true  
back-to-back read or write operations without the insertion of  
wait states. The CY7C1471BV25, CY7C1473BV25, and  
CY7C1475BV25 are equipped with the advanced No Bus  
Latency (NoBL) logic required to enable consecutive read or  
write operations with data transferred on every clock cycle. This  
feature dramatically improves the throughput of data through the  
SRAM, especially in systems that require frequent write-read  
transitions.  
Supports up to 133 MHz bus operations with zero wait states  
Data transfers on every clock  
Pin compatible and functionally equivalent to ZBT™ devices  
Internally self timed output buffer control to eliminate the need  
to use OE  
Registered inputs for flow through operation  
Byte Write capability  
All synchronous inputs pass through input registers controlled by  
the rising edge of the clock. The clock input is qualified by the  
Clock Enable (CEN) signal, which when deasserted suspends  
operation and extends the previous clock cycle. Maximum  
access delay from the clock rise is 6.5 ns (133-MHz device).  
2.5V IO supply (VDDQ  
)
Fast clock-to-output times  
6.5 ns (for 133-MHz device)  
Write operations are controlled by two or four Byte Write Select  
(BWX) and a Write Enable (WE) input. All writes are conducted  
with on-chip synchronous self timed write circuitry.  
Clock Enable (CEN) pin to enable clock and suspend operation  
Synchronous self timed writes  
Three synchronous Chip Enables (CE1, CE2, CE3) and an  
asynchronous Output Enable (OE) provide easy bank selection  
and output tri-state control. To avoid bus contention, the output  
drivers are synchronously tri-stated during the data portion of a  
write sequence.  
Asynchronous Output Enable (OE)  
CY7C1471BV25, CY7C1473BV25 available in  
JEDEC-standard Pb-free 100-pin TQFP, Pb-free and  
non-Pb-free 165-ball FBGA package. CY7C1475BV25  
available in Pb-free and non-Pb-free 209-ball FBGA package.  
For best practice recommendations, refer to the Cypress appli-  
cation note AN1064, SRAM System Guidelines.  
Three Chip Enables (CE1, CE2, CE3) for simple depth  
expansion.  
Automatic power down feature available using ZZ mode or CE  
deselect.  
IEEE 1149.1 JTAG Boundary Scan compatible  
Burst Capability - linear or interleaved burst order  
Low standby power  
Selection Guide  
Description  
Maximum Access Time  
133 MHz  
6.5  
100 MHz  
8.5  
Unit  
ns  
Maximum Operating Current  
305  
275  
mA  
mA  
Maximum CMOS Standby Current  
120  
120  
Cypress Semiconductor Corporation  
Document #: 001-15013 Rev. *E  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised February 29, 2008  
[+] Feedback  

CY7C1471BV25-133AXC 替代型号

型号 品牌 替代类型 描述 数据表
CY7C1471V25-133AXC CYPRESS

完全替代

72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture

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