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CY7C1441AV33-100BZXC PDF预览

CY7C1441AV33-100BZXC

更新时间: 2024-10-26 15:30:19
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 时钟静态存储器内存集成电路
页数 文件大小 规格书
31页 906K
描述
Cache SRAM, 1MX36, 8.5ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, FBGA-165

CY7C1441AV33-100BZXC 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:BGA包装说明:15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, FBGA-165
针数:165Reach Compliance Code:compliant
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.77最长访问时间:8.5 ns
其他特性:FLOW-THROUGH ARCHITECTURE最大时钟频率 (fCLK):100 MHz
I/O 类型:COMMONJESD-30 代码:R-PBGA-B165
JESD-609代码:e1长度:17 mm
内存密度:37748736 bit内存集成电路类型:CACHE SRAM
内存宽度:36湿度敏感等级:3
功能数量:1端子数量:165
字数:1048576 words字数代码:1000000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:1MX36
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:LBGA封装等效代码:BGA165,11X15,40
封装形状:RECTANGULAR封装形式:GRID ARRAY, LOW PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:2.5/3.3,3.3 V认证状态:Not Qualified
座面最大高度:1.4 mm最小待机电流:3.14 V
子类别:SRAMs最大压摆率:0.29 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3.135 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:BALL
端子节距:1 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:20宽度:15 mm
Base Number Matches:1

CY7C1441AV33-100BZXC 数据手册

 浏览型号CY7C1441AV33-100BZXC的Datasheet PDF文件第2页浏览型号CY7C1441AV33-100BZXC的Datasheet PDF文件第3页浏览型号CY7C1441AV33-100BZXC的Datasheet PDF文件第4页浏览型号CY7C1441AV33-100BZXC的Datasheet PDF文件第5页浏览型号CY7C1441AV33-100BZXC的Datasheet PDF文件第6页浏览型号CY7C1441AV33-100BZXC的Datasheet PDF文件第7页 
CY7C1441AV33  
CY7C1443AV33,CY7C1447AV33  
36-Mbit (1M x 36/2M x 18/512K x 72)  
Flow-Through SRAM  
Features  
Functional Description  
Supports 133-MHz bus operations  
1M x 36/2M x 18/512K x 72 common IO  
3.3V core power supply  
The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are  
3.3V, 1M x 36/2M x 18/512K x 72 Synchronous Flow-through  
SRAMs, respectively designed to interface with high-speed  
microprocessors with minimum glue logic. Maximum access  
delay from clock rise is 6.5 ns (133-MHz version). A 2-bit on-chip  
counter captures the first address in a burst and increments the  
address automatically for the rest of the burst access. All  
synchronous inputs are gated by registers controlled by a  
positive-edge-triggered Clock Input (CLK). The synchronous  
inputs include all addresses, all data inputs, address-pipelining  
Chip Enable (CE1), depth-expansion Chip Enables (CE2 and  
2.5V or 3.3V IO power supply  
Fast clock-to-output times  
6.5 ns (133-MHz version)  
Provide high-performance 2-1-1-1 access rate  
User-selectable burst counter supporting Intel® Pentium®  
interleaved or linear burst sequences  
CE3), Burst Control inputs (ADSC, ADSP, and ADV), Write  
Enables (BWx, and BWE), and Global Write (GW).  
Asynchronous inputs include the Output Enable (OE) and the ZZ  
pin.  
Separate processor and controller address strobes  
Synchronous self-timed write  
The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33 allows  
either interleaved or linear burst sequences, selected by the  
MODE input pin. A HIGH selects an interleaved burst sequence,  
while a LOW selects a linear burst sequence. Burst accesses  
can be initiated with the Processor Address Strobe (ADSP) or the  
cache Controller Address Strobe (ADSC) inputs. Address  
advancement is controlled by the Address Advancement (ADV)  
input.  
Asynchronous output enable  
CY7C1441AV33, CY7C1443AV33 available in  
JEDEC-standard Pb-free 100-pin TQFP package, Pb-free and  
non-lead-free 165-ball FBGA package. CY7C1447AV33  
available in Pb-free and non-lead-free 209-ball FBGA package  
IEEE 1149.1 JTAG-Compatible Boundary Scan  
“ZZ” Sleep Mode option  
Addresses and chip enables are registered at rising edge of  
clock when either Address Strobe Processor (ADSP) or Address  
Strobe Controller (ADSC) are active. Subsequent burst  
addresses can be internally generated as controlled by the  
Advance pin (ADV).  
The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33  
operates from a +3.3V core power supply while all outputs may  
operate with either a +2.5 or +3.3V supply. All inputs and outputs  
are JEDEC-standard JESD8-5-compatible.  
Selection Guide  
Description  
Maximum Access Time  
133 MHz  
6.5  
100 MHz  
8.5  
Unit  
ns  
Maximum Operating Current  
310  
290  
mA  
mA  
Maximum CMOS Standby Current  
120  
120  
Note  
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.  
Cypress Semiconductor Corporation  
Document #: 38-05357 Rev. *G  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised May 09, 2008  
[+] Feedback  

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