Datasheet > CY7C1426KV18_12

CY7C1426KV18_12

更新时间： 2024-11-27 12:23:15

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器
页数	文件大小	规格书
35页	936K
描述
36-Mbit QDRÂ® II SRAM Four-Word Burst Architecture

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数据手册

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CY7C1426KV18_12 数据手册

CY7C1411KV18, CY7C1426KV18

CY7C1413KV18, CY7C1415KV18

36-Mbit QDR^®II SRAM Four-Word

Burst Architecture

36-Mbit QDR^®II SRAM Four-Word Burst Architecture

Features

Configurations

■ Separate independent read and write data ports

❐ Supports concurrent transactions

CY7C1411KV18 – 4 M × 8

CY7C1426KV18 – 4 M × 9

CY7C1413KV18 – 2 M × 18

CY7C1415KV18 – 1 M × 36

■ 333 MHz clock for high bandwidth

■ Four-word burst for reducing address bus frequency

■ Double data rate (DDR) Interfaces on both read and write ports

(data transferred at 666 MHz) at 333 MHz

Functional Description

The CY7C1411KV18, CY7C1426KV18, CY7C1413KV18, and

CY7C1415KV18 are 1.8 V synchronous pipelined SRAMs,

equipped with QDR II architecture. QDR II architecture consists

of two separate ports: the read port and the write port to access

the memory array. The read port has dedicated data outputs to

support read operations and the write port has dedicated data

inputs to support write operations. QDR II architecture has

separate data inputs and data outputs to completely eliminate

the need to “turnaround” the data bus that exists with common

I/O devices. Each port can be accessed through a common

address bus. Addresses for read and write addresses are

latched on alternate rising edges of the input (K) clock. Accesses

to the QDR II read and write ports are independent of one

another. To maximize data throughput, both read and write ports

are equipped with DDR interfaces. Each address location is

associated with four 8-bit words (CY7C1411KV18), 9-bit words

(CY7C1426KV18), 18-bit words (CY7C1413KV18), or 36-bit

words (CY7C1415KV18) that burst sequentially into or out of the

device. Because data can be transferred into and out of the

device on every rising edge of both input clocks (K and K and C

and C), memory bandwidth is maximized while simplifying

system design by eliminating bus ‘turnarounds’.

■ Two input clocks (K and K) for precise DDR timing

❐ SRAM uses rising edges only

■ Two input clocks for output data (C and C) to minimize clock

skew and flight time mismatches

■ Echo clocks (CQ and CQ) simplify data capture in high speed

systems

■ Single multiplexed address input bus latches address inputs

for read and write ports

■ Separate port selects for depth expansion

■ Synchronous internally self-timed writes

■ QDR^®II operates with 1.5 cycle read latency when DOFF is

asserted HIGH

■ OperatessimilartoQDRIdevicewith1cyclereadlatencywhen

DOFF is asserted LOW

■ Available in × 8, × 9, × 18, and × 36 configurations

■ Full data coherency, providing most current data

Depth expansion is accomplished with port selects, which

enables each port to operate independently.

■ Core V_DD= 1.8 V (±0.1 V); I/O V_DDQ= 1.4 V to V_DD

❐ Supports both 1.5 V and 1.8 V I/O supply

All synchronous inputs pass through input registers controlled by

the K or K input clocks. All data outputs pass through output

registers controlled by the C or C (or K or K in a single clock

domain) input clocks. Writes are conducted with on-chip

synchronous self-timed write circuitry.

■ Available in 165-ball FBGA package (13 × 15 × 1.4 mm)

■ Offered in both Pb-free and non Pb-free Packages

■ Variable drive HSTL output buffers

■ JTAG 1149.1 compatible test access port

■ Phase locked loop (PLL) for accurate data placement

Selection Guide

Description

Maximum operating frequency

333 MHz

333

300 MHz

300

250 MHz Unit

250

460

470

640

MHz

Maximum operating current

× 8 Not Offered

520

× 9

560

570

790

520

× 18

× 36

540

730

Cypress Semiconductor Corporation

Document Number: 001-57826 Rev. *E

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised October 25, 2012

12 3 4 5 6 7...35

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与CY7C1426KV18_12相关器件

型号	品牌	获取价格	描述	数据表
CY7C1426KV18-250BZC	CYPRESS	获取价格	36-Mbit QDR? II SRAM 4-Word Burst Architecture
CY7C1426KV18-250BZCT	CYPRESS	获取价格	Standard SRAM, 4MX9, 0.45ns, CMOS, PBGA165,
CY7C1426KV18-250BZXC	CYPRESS	获取价格	36-Mbit QDR? II SRAM 4-Word Burst Architecture
CY7C1426KV18-300BZC	CYPRESS	获取价格	36-Mbit QDR? II SRAM 4-Word Burst Architecture
CY7C1426KV18-300BZCT	CYPRESS	获取价格	Standard SRAM, 4MX9, 0.45ns, CMOS, PBGA165,
CY7C1426KV18-300BZXC	CYPRESS	获取价格	36-Mbit QDR? II SRAM 4-Word Burst Architecture
CY7C1426KV18-333BZC	CYPRESS	获取价格	36-Mbit QDR? II SRAM 4-Word Burst Architecture
CY7C1427AV18	CYPRESS	获取价格	36-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1427AV18-167BZC	CYPRESS	获取价格	36-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1427AV18-167BZI	CYPRESS	获取价格	36-Mbit DDR-II SRAM 2-Word Burst Architecture

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