Datasheet > 存储 > SRAM> CY7C1418KV18-250BZC

CY7C1418KV18-250BZC

更新时间： 2024-09-16 09:44:31

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		存储内存集成电路静态存储器双倍数据速率时钟
页数	文件大小	规格书
32页	1290K
描述
36-Mbit DDR II SRAM 2-Word Burst Architecture

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技术参数
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替代型号

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CY7C1418KV18-250BZC 技术参数

是否Rohs认证：	不符合	生命周期：	Active
零件包装代码：	BGA	包装说明：	LBGA, BGA165,11X15,40
针数：	165	Reach Compliance Code：	compliant
ECCN代码：	3A991.B.2.A	HTS代码：	8542.32.00.41
风险等级：	2.13	Is Samacsys：	N
最长访问时间：	0.45 ns	其他特性：	PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)：	250 MHz	I/O 类型：	COMMON
JESD-30 代码：	R-PBGA-B165	JESD-609代码：	e0
长度：	15 mm	内存密度：	37748736 bit
内存集成电路类型：	DDR SRAM	内存宽度：	18
湿度敏感等级：	3	功能数量：	1
端子数量：	165	字数：	2097152 words
字数代码：	2000000	工作模式：	SYNCHRONOUS
最高工作温度：	70 °C	最低工作温度：
组织：	2MX18	输出特性：	3-STATE
封装主体材料：	PLASTIC/EPOXY	封装代码：	LBGA
封装等效代码：	BGA165,11X15,40	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, LOW PROFILE	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	235	电源：	1.5/1.8,1.8 V
认证状态：	Not Qualified	座面最大高度：	1.4 mm
最大待机电流：	0.26 A	最小待机电流：	1.7 V
子类别：	SRAMs	最大压摆率：	0.43 mA
最大供电电压 (Vsup)：	1.9 V	最小供电电压 (Vsup)：	1.7 V
标称供电电压 (Vsup)：	1.8 V	表面贴装：	YES
技术：	CMOS	温度等级：	COMMERCIAL
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	BALL
端子节距：	1 mm	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	20	宽度：	13 mm
Base Number Matches：	1

CY7C1418KV18-250BZC 数据手册

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CY7C1416KV18, CY7C1427KV18

CY7C1418KV18, CY7C1420KV18

36-Mbit DDR II SRAM 2-Word

Burst Architecture

36-Mbit DDR II SRAM 2-Word Burst Architecture

Features

Configurations

■ 36-Mbit density (4 M × 8, 4 M × 9, 2 M × 18, 1 M × 36)

■ 333 MHz clock for high bandwidth

CY7C1416KV18 – 4 M × 8

CY7C1427KV18 – 4 M × 9

CY7C1418KV18 – 2 M × 18

CY7C1420KV18 – 1 M × 36

■ 2-word burst for reducing address bus frequency

■ Double data rate (DDR) interfaces

(data transferred at 666 MHz) at 333 MHz

Functional Description

■ Two input clocks (K and K) for precise DDR timing

❐ SRAM uses rising edges only

The CY7C1416KV18, CY7C1427KV18, CY7C1418KV18, and

CY7C1420KV18 are 1.8 V synchronous pipelined SRAM

equipped with DDR II architecture. The DDR II consists of an

SRAM core with advanced synchronous peripheral circuitry and

a 1-bit burst counter. Addresses for read and write are latched

on alternate rising edges of the input (K) clock. Write data is

registered on the rising edges of both K and K. Read data is

driven on the rising edges of C and C if provided, or on the rising

edge of K and K if C/C are not provided. Each address location

is associated with two 8-bit words in the case of CY7C1416KV18

and two 9-bit words in the case of CY7C1427KV18 that burst

sequentially into or out of the device. The burst counter always

starts with a “0” internally in the case of CY7C1416KV18 and

CY7C1427KV18. On CY7C1418KV18 and CY7C1420KV18, the

burst counter takes in the least significant bit of the external

address and bursts two 18-bit words in the case of

CY7C1418KV18 and two 36-bit words in the case of

CY7C1420KV18 sequentially into or out of the device.

■ Two input clocks for output data (C and C) to minimize clock

skew and flight time mismatches

■ Echo clocks (CQ and CQ) simplify data capture in high speed

systems

■ Synchronous internally self-timed writes

■ DDR II operates with 1.5 cycle read latency when DOFF is

asserted HIGH

■ Operates similar to DDR-I device with 1 cycle read latency

when DOFF is asserted LOW

■ 1.8 V core power supply with HSTL inputs and outputs

■ Variable drive HSTL output buffers

■ Expanded HSTL output voltage (1.4 V to V_DD

)

❐ Supports both 1.5 V and 1.8 V IO supply

Asynchronous inputs include an output impedance matching

input (ZQ). Synchronous data outputs (Q, sharing the same

physical pins as the data inputs D) are tightly matched to the two

output echo clocks CQ/CQ, eliminating the need for separately

capturing data from each individual DDR SRAM in the system

design. Output data clocks (C/C) enable maximum system

clocking and data synchronization flexibility.

■ Available in 165-ball FBGA package (13 × 15 × 1.4 mm)

■ Offered in both Pb-free and non Pb-free packages

■ JTAG 1149.1 compatible test access port

■ Phase locked loop (PLL) for accurate data placement

All synchronous inputs pass through input registers controlled by

the K or K input clocks. All data outputs pass through output

registers controlled by the C or C (or K or K in a single clock

domain) input clocks. Writes are conducted with on-chip

synchronous self-timed write circuitry.

Selection Guide

Description

Maximum operating frequency

Maximum operating current

333 MHz

333

300 MHz

300

250 MHz

250

200 MHz

200

167 MHz

167

Unit

MHz

× 8

× 9

480

450

420

370

340

480

450

420

370

340

× 18

× 36

490

460

430

380

340

600

560

490

430

380

Cypress Semiconductor Corporation

Document Number: 001-57827 Rev. *B

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised February 25, 2011

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CY7C1418KV18-250BZC 替代型号

型号	品牌	替代类型	描述	数据表
CY7C1418KV18-250BZCT	CYPRESS	完全替代	Standard SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165

与CY7C1418KV18-250BZC相关器件

型号	品牌	获取价格	描述	数据表
CY7C1418KV18-250BZCT	CYPRESS	获取价格	Standard SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
CY7C1418KV18-250BZCT	INFINEON	获取价格	DDR-II CIO
CY7C1418KV18-250BZI	CYPRESS	获取价格	36-Mbit DDR II SRAM 2-Word Burst Architecture
CY7C1418KV18-250BZI	INFINEON	获取价格	DDR-II CIO
CY7C1418KV18-250BZXC	CYPRESS	获取价格	36-Mbit DDR II SRAM 2-Word Burst Architecture
CY7C1418KV18-250BZXC	INFINEON	获取价格	DDR-II CIO
CY7C1418KV18-250BZXI	CYPRESS	获取价格	DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, FBGA-165
CY7C1418KV18-250BZXI	INFINEON	获取价格	DDR-II CIO
CY7C1418KV18-300BZC	CYPRESS	获取价格	36-Mbit DDR II SRAM 2-Word Burst Architecture
CY7C1418KV18-300BZXC	CYPRESS	获取价格	36-Mbit DDR II SRAM 2-Word Burst Architecture

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