Datasheet > 存储 > SRAM> CY7C1416AV18-250BZXI

CY7C1416AV18-250BZXI

更新时间： 2024-10-30 05:19:27

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器双倍数据速率
页数	文件大小	规格书
28页	491K
描述
36-Mbit DDR-II SRAM 2-Word Burst Architecture

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

CY7C1416AV18-250BZXI 数据手册

浏览型号CY7C1416AV18-250BZXI的Datasheet PDF文件第2页

浏览型号CY7C1416AV18-250BZXI的Datasheet PDF文件第3页

浏览型号CY7C1416AV18-250BZXI的Datasheet PDF文件第4页

浏览型号CY7C1416AV18-250BZXI的Datasheet PDF文件第5页

浏览型号CY7C1416AV18-250BZXI的Datasheet PDF文件第6页

CY7C1416AV18

CY7C1427AV18

CY7C1418AV18

CY7C1420AV18

36-Mbit DDR-II SRAM 2-Word

Burst Architecture

Features

Functional Description

• 36-Mbit density (4M x 8, 4M x 9, 2M x 18, 1M x 36)

• 300-MHz clock for high bandwidth

The CY7C1416AV18, CY7C1427AV18, CY7C1418AV18 and

CY7C1420AV18 are 1.8V Synchronous Pipelined SRAM

equipped with DDR-II architecture. The DDR-II consists of an

SRAM core with advanced synchronous peripheral circuitry

and a 1-bit burst counter. Addresses for Read and Write are

latched on alternate rising edges of the input (K) clock. Write

data is registered on the rising edges of both K and K. Read

data is driven on the rising edges of C and C if provided, or on

the rising edge of K and K if C/C are not provided. Each

address location is associated with two 8-bit words in the case

of CY7C1416AV18 and two 9-bit words in the case of

CY7C1427AV18 that burst sequentially into or out of the

device. The burst counter always starts with a “0” internally in

the case of CY7C1416AV18 and CY7C1427AV18. On

CY7C1418AV18 and CY7C1420AV18, the burst counter takes

in the least significant bit of the external address and bursts

two 18-bit words in the case of CY7C1418AV18 and two 36-bit

words in the case of CY7C1420AV18 sequentially into or out

of the device.

• 2-Word burst for reducing address bus frequency

• Double Data Rate (DDR) interfaces

(data transferred at 600 MHz) @ 300 MHz

• Two input clocks (K and K) for precise DDR timing

— SRAM uses rising edges only

• Two input clocks for output data (C and C) to minimize

clock-skew and flight-time mismatches

• Echo clocks (CQ and CQ) simplify data capture in

high-speed systems

• Synchronous internally self-timed writes

• 1.8V core power supply with HSTL inputs and outputs

• Variable drive HSTL output buffers

• Expanded HSTL output voltage (1.4V–V_DD

)

Asynchronous inputs include output impedance matching

input (ZQ). Synchronous data outputs (Q, sharing the same

physical pins as the data inputs D) are tightly matched to the

two output echo clocks CQ/CQ, eliminating the need for

separately capturing data from each individual DDR SRAM in

the system design. Output data clocks (C/C) enable maximum

system clocking and data synchronization flexibility.

• Available in 165-ball FBGA package (15 x 17 x 1.4 mm)

• Offered in both in lead-free and non lead-free packages

• JTAG 1149.1 compatible test access port

• Delay Lock Loop (DLL) for accurate data placement

Configurations

All synchronous inputs pass through input registers controlled

by the K or K input clocks. All data outputs pass through output

registers controlled by the C or C (or K or K in a single clock

domain) input clocks. Writes are conducted with on-chip

synchronous self-timed write circuitry.

CY7C1416AV18 – 4M x 8

CY7C1427AV18 – 4M x 9

CY7C1418AV18 – 2M x 18

CY7C1420AV18 – 1M x 36

Selection Guide

300 MHz

300

278 MHz

250 MHz

250

200 MHz

200

167 MHz

167

Unit

MHz

Maximum Operating Frequency

Maximum Operating Current

278

775

825

700

600

500

Cypress Semiconductor Corporation

Document Number: 38-05616 Rev. *D

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised September 25, 2006

[+] Feedback

12 3 4 5 6 7...28

中文翻译

下载PDF

与CY7C1416AV18-250BZXI相关器件

型号	品牌	获取价格	描述	数据表
CY7C1416AV18-278BZC	CYPRESS	获取价格	36-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1416AV18-278BZI	CYPRESS	获取价格	36-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1416AV18-278BZXC	CYPRESS	获取价格	36-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1416AV18-278BZXI	CYPRESS	获取价格	36-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1416AV18-300BZC	CYPRESS	获取价格	36-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1416AV18-300BZI	CYPRESS	获取价格	36-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1416AV18-300BZXC	CYPRESS	获取价格	36-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1416AV18-300BZXI	CYPRESS	获取价格	36-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1416BV18	CYPRESS	获取价格	36-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1416BV18_07	CYPRESS	获取价格	36-Mbit DDR-II SRAM 2-Word Burst Architecture

与CY7C1416AV18-250BZXI相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

19
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

20
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

45
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

52

产品中心

服务支持

精选活动

关于我们

帮助中心

CY7C1416AV18-250BZXI

CY7C1416AV18-250BZXI 数据手册

与CY7C1416AV18-250BZXI相关器件

与CY7C1416AV18-250BZXI相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

CY7C1416AV18-250BZXI

CY7C1416AV18-250BZXI 数据手册

与CY7C1416AV18-250BZXI相关器件

与CY7C1416AV18-250BZXI相关文章

您还可以找

您在本页遇到什么问题？