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CY7C1414KV18-250BZXI PDF预览

CY7C1414KV18-250BZXI

更新时间: 2024-12-01 12:27:51
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器
页数 文件大小 规格书
33页 895K
描述
36-Mbit QDR® II SRAM Two-Word Burst Architecture

CY7C1414KV18-250BZXI 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:BGA包装说明:LBGA, BGA165,11X15,40
针数:165Reach Compliance Code:compliant
ECCN代码:3A991HTS代码:8542.32.00.41
Factory Lead Time:1 week风险等级:1.06
最长访问时间:0.45 ns其他特性:PIPELINED ARCHITECTURE
最大时钟频率 (fCLK):250 MHzI/O 类型:SEPARATE
JESD-30 代码:R-PBGA-B165JESD-609代码:e1
长度:15 mm内存密度:37748736 bit
内存集成电路类型:QDR SRAM内存宽度:36
湿度敏感等级:3功能数量:1
端子数量:165字数:1048576 words
字数代码:1000000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:1MX36输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:LBGA
封装等效代码:BGA165,11X15,40封装形状:RECTANGULAR
封装形式:GRID ARRAY, LOW PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):260电源:1.5/1.8,1.8 V
认证状态:Not Qualified座面最大高度:1.4 mm
最大待机电流:0.26 A最小待机电流:1.7 V
子类别:SRAMs最大压摆率:0.73 mA
最大供电电压 (Vsup):1.9 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:BALL
端子节距:1 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:30宽度:13 mm
Base Number Matches:1

CY7C1414KV18-250BZXI 数据手册

 浏览型号CY7C1414KV18-250BZXI的Datasheet PDF文件第2页浏览型号CY7C1414KV18-250BZXI的Datasheet PDF文件第3页浏览型号CY7C1414KV18-250BZXI的Datasheet PDF文件第4页浏览型号CY7C1414KV18-250BZXI的Datasheet PDF文件第5页浏览型号CY7C1414KV18-250BZXI的Datasheet PDF文件第6页浏览型号CY7C1414KV18-250BZXI的Datasheet PDF文件第7页 
CY7C1425KV18  
CY7C1412KV18  
CY7C1414KV18  
36-Mbit QDR® II SRAM Two-Word  
Burst Architecture  
36-Mbit QDR® II SRAM Two-Word Burst Architecture  
Features  
Configurations  
Separate independent read and write data ports  
Supports concurrent transactions  
CY7C1425KV18 – 4 M × 9  
CY7C1412KV18 – 2 M × 18  
CY7C1414KV18 – 1 M × 36  
333 MHz clock for high bandwidth  
Two-word burst on all accesses  
Functional Description  
Double data rate (DDR) Interfaces on both read and write ports  
(data transferred at 666 MHz) at 333 MHz  
The CY7C1425KV18, CY7C1412KV18, and CY7C1414KV18  
are 1.8 V synchronous pipelined SRAMs, equipped with QDR II  
architecture. QDR II architecture consists of two separate ports:  
the read port and the write port to access the memory array. The  
read port has dedicated data outputs to support read operations  
and the write port has dedicated data inputs to support write  
operations. QDR II architecture has separate data inputs and  
data outputs to completely eliminate the need to “turnaround” the  
data bus that exists with common I/O devices. Access to each  
port is through a common address bus. Addresses for read and  
write addresses are latched on alternate rising edges of the input  
(K) clock. Accesses to the QDR II read and write ports are  
completely independent of one another. To maximize data  
throughput, both read and write ports are equipped with DDR  
interfaces. Each address location is associated with two 9-bit  
words (CY7C1425KV18), 18-bit words (CY7C1412KV18), or  
36-bit words (CY7C1414KV18) that burst sequentially into or out  
of the device. Because data can be transferred into and out of  
the device on every rising edge of both input clocks (K and K and  
C and C), memory bandwidth is maximized while simplifying  
system design by eliminating bus turnarounds.  
Two input clocks (K and K) for precise DDR timing  
SRAM uses rising edges only  
Two input clocks for output data (C and C) to minimize clock  
skew and flight time mismatches  
Echo clocks (CQ and CQ) simplify data capture in high speed  
systems  
Single multiplexed address input bus latches address inputs  
for both read and write ports  
Separate port selects for depth expansion  
Synchronous internally self-timed writes  
QDR® II operates with 1.5 cycle read latency when DOFF is  
asserted HIGH  
OperatessimilartoQDRIdevicewith1cyclereadlatencywhen  
DOFF is asserted LOW  
Available in × 9, × 18, and × 36 configurations  
Full data coherency, providing most current data  
Depth expansion is accomplished with port selects, which  
enables each port to operate independently.  
All synchronous inputs pass through input registers controlled by  
the K or K input clocks. All data outputs pass through output  
registers controlled by the C or C (or K or K in a single clock  
domain) input clocks. Writes are conducted with on-chip  
synchronous self-timed write circuitry.  
Core VDD = 1.8 V (±0.1 V); I/O VDDQ = 1.4 V to VDD  
Supports both 1.5 V and 1.8 V I/O supply  
Available in 165-ball FBGA package (13 × 15 ×1.4 mm)  
Offered in both Pb-free and non Pb-free Packages  
Variable drive HSTL output buffers  
JTAG 1149.1 compatible test access port  
Phase locked loop (PLL) for accurate data placement  
Selection Guide  
Description  
Maximum operating frequency  
333 MHz  
333  
300 MHz  
300  
250 MHz Unit  
250  
590  
610  
730  
MHz  
mA  
Maximum operating current  
× 9  
730  
680  
× 18  
× 36  
750  
700  
910  
850  
Cypress Semiconductor Corporation  
Document Number: 001-57825 Rev. *I  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised March 20, 2013  

CY7C1414KV18-250BZXI 替代型号

型号 品牌 替代类型 描述 数据表
CY7C1414KV18-250BZXIT CYPRESS

完全替代

暂无描述
CY7C1414KV18-250BZI CYPRESS

完全替代

36-Mbit QDR® II SRAM Two-Word Burst Architec
CY7C1414BV18-250BZXI CYPRESS

完全替代

36-Mbit QDR-II SRAM 2-Word Burst Architecture

与CY7C1414KV18-250BZXI相关器件

型号 品牌 获取价格 描述 数据表
CY7C1414KV18-250BZXIT CYPRESS

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CY7C1414KV18-300BZC CYPRESS

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36-Mbit QDR® II SRAM Two-Word Burst Architec
CY7C1414KV18-300BZI CYPRESS

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36-Mbit QDR® II SRAM Two-Word Burst Architec
CY7C1414KV18-300BZXC CYPRESS

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36-Mbit QDR? II SRAM 2-Word Burst Architecture
CY7C1414KV18-300BZXI CYPRESS

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36-Mbit QDR® II SRAM Two-Word Burst Architec
CY7C1414KV18-300BZXI INFINEON

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Synchronous SRAM
CY7C1414KV18-333BZC CYPRESS

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36-Mbit QDR? II SRAM 2-Word Burst Architecture
CY7C1414KV18-333BZC INFINEON

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Synchronous SRAM
CY7C1414KV18-333BZXC CYPRESS

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36-Mbit QDR® II SRAM Two-Word Burst Architec
CY7C1414KV18-333BZXI CYPRESS

获取价格

36-Mbit QDR® II SRAM Two-Word Burst Architec