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CY7C1387F PDF预览

CY7C1387F

更新时间: 2024-11-25 09:44:23
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器
页数 文件大小 规格书
36页 1183K
描述
18-Mbit (512 K x 36/1 M x 18) Pipelined DCD Sync SRAM

CY7C1387F 数据手册

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CY7C1386D, CY7C1386F  
CY7C1387D, CY7C1387F  
18-Mbit (512 K × 36/1 M × 18) Pipelined  
DCD Sync SRAM  
18-Mbit (512  
K × 36/1 M × 18) Pipelined DCD Sync SRAM  
Features  
Functional Description  
Supports bus operation up to 250 MHz  
The  
CY7C1386D/CY7C1387D/CY7C1386F/CY7C1387F  
SRAM[1] integrates 512 K × 36/1 M × 18 SRAM cells with  
advanced synchronous peripheral circuitry and a two-bit counter  
for internal burst operation. All synchronous inputs are gated by  
registers controlled by a positive edge triggered clock input  
(CLK). The synchronous inputs include all addresses, all data  
inputs, address-pipelining chip enable (CE1), depth expansion  
chip enables (CE2 and CE3 [2]), burst control inputs (ADSC,  
Available speed grades are 250, 200, and 167 MHz  
Registered inputs and outputs for pipelined operation  
Optimal for performance (double-cycle deselect)  
Depth expansion without wait state  
3.3 V core power supply (VDD  
)
ADSP,  
ADV), write enables (  
, and BWE), and global  
BWX  
and  
write (GW). Asynchronous inputs include the output enable (OE)  
and the ZZ pin.  
2.5 V or 3.3 V I/O power supply (VDDQ)  
Fast clock-to-output times  
2.6 ns (for 250 MHz device)  
Addresses and chip enables are registered at rising edge of  
clock when either address strobe processor (ADSP) or address  
strobe controller (ADSC) are active. Subsequent burst  
addresses can be internally generated as controlled by the  
advance pin (ADV).  
Provides high performance 3-1-1-1 access rate  
User selectable burst counter supporting IntelPentium  
Interleaved or linear burst sequences  
Address, data inputs, and write controls are registered on-chip  
to initiate a self timed write cycle.This part supports byte write  
operations (see on page 4 and Truth Table on page 11 for further  
details). Write cycles can be one to four bytes wide as controlled  
by the byte write control inputs. GW active LOW causes all bytes  
to be written. This device incorporates an additional pipelined  
enable register which delays turning off the output buffers an  
additional cycle when a deselect is executed.This feature allows  
depth expansion without penalizing system performance.  
Separate processor and controller address strobes  
Synchronous self-timed writes  
Asynchronous output enable  
CY7C1386D/CY7C1387D available in JEDEC-standard  
Pb-free 100-pin TQFP, Pb-free and non Pb-free 165-ball FBGA  
package. CY7C1386F/CY7C1387F available in Pb-free and  
non Pb-free 119-ball BGA package  
The  
CY7C1386D/CY7C1387D/CY7C1386F/CY7C1387F  
IEEE 1149.1 JTAG-compatible boundary scan  
ZZ sleep mode option  
operates from a +3.3 V core power supply while all outputs  
operate with a +3.3 V or +2.5 V supply. All inputs and outputs are  
JEDEC-standard and JESD8-5-compatible.  
Selection Guide  
Description  
Maximum access time  
250 MHz  
2.6  
200 MHz  
3.0  
167 MHz  
3.4  
Unit  
ns  
Maximum operating current  
350  
300  
275  
mA  
mA  
Maximum CMOS standby current  
70  
70  
70  
Notes  
1. For best practices or recommendations, please refer to the Cypress application note AN1064, SRAM System Design Guidelines on www.cypress.com.  
2. CE and CE are for 100-pin TQFP and 165-ball FBGA packages only. 119-ball BGA is offered only in Single Chip Enable.  
3
2
Cypress Semiconductor Corporation  
Document Number: 38-05545 Rev. *H  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised July 12, 2011  
[+] Feedback  

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