Datasheet > 存储 > SRAM> CY7C1387D-167AXI

CY7C1387D-167AXI

更新时间： 2024-11-25 03:11:03

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器
页数	文件大小	规格书
29页	464K
描述
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM

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技术参数
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CY7C1387D-167AXI 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	QFP
包装说明：	LQFP, QFP100,.63X.87	针数：	100
Reach Compliance Code：	compliant	ECCN代码：	3A991.B.2.A
HTS代码：	8542.32.00.41	风险等级：	5.79
最长访问时间：	3.4 ns	其他特性：	PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)：	167 MHz	I/O 类型：	COMMON
JESD-30 代码：	R-PQFP-G100	JESD-609代码：	e3
长度：	20 mm	内存密度：	18874368 bit
内存集成电路类型：	CACHE SRAM	内存宽度：	18
湿度敏感等级：	3	功能数量：	1
端子数量：	100	字数：	1048576 words
字数代码：	1000000	工作模式：	SYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	1MX18	输出特性：	3-STATE
封装主体材料：	PLASTIC/EPOXY	封装代码：	LQFP
封装等效代码：	QFP100,.63X.87	封装形状：	RECTANGULAR
封装形式：	FLATPACK, LOW PROFILE	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	260	电源：	2.5/3.3,3.3 V
认证状态：	Not Qualified	座面最大高度：	1.6 mm
最大待机电流：	0.07 A	最小待机电流：	3.14 V
子类别：	SRAMs	最大压摆率：	0.275 mA
最大供电电压 (Vsup)：	3.6 V	最小供电电压 (Vsup)：	3.135 V
标称供电电压 (Vsup)：	3.3 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子面层：	Matte Tin (Sn)	端子形式：	GULL WING
端子节距：	0.65 mm	端子位置：	QUAD
处于峰值回流温度下的最长时间：	20	宽度：	14 mm
Base Number Matches：	1

CY7C1387D-167AXI 数据手册

PRELIMINARY

CY7C1386D

CY7C1387D

18-Mbit (512K x 36/1 Mbit x 18) Pipelined

DCD Sync SRAM

Features

Functional Description^[1]

• Supports bus operation up to 250 MHz

The CY7C1386D/CY7C1387D SRAM integrates 524,288 x 36

and 1,048,576 x 18 SRAM cells with advanced synchronous

• Available speed grades are 250, 200 and 167 MHz

• Registered inputs and outputs for pipelined operation

• Optimal for performance (Double-Cycle deselect)

• Depth expansion without wait state

• 3.3V –5% and +10% core power supply (V_DD

• 2.5V/3.3V I/O operation

peripheral circuitry and a two-bit counter for internal burst

operation. All synchronous inputs are gated by registers

controlled by a positive-edge-triggered Clock Input (CLK). The

synchronous inputs include all addresses, all data inputs,

address-pipelining Chip Enable (CE₁), depth-expansion Chip

Enables (CE₂and CE₃^[2]), Burst Control inputs (ADSC, ADSP,

)

ADV), Write Enables (

, and BWE), and Global Write

and

BW_X

(GW). Asynchronous inputs include the Output Enable (OE)

• Fast clock-to-output times

and the ZZ pin.

— 2.6 ns (for 250-MHz device)

— 3.0 ns (for 200-MHz device)

— 3.4 ns (for 167-MHz device)

Addresses and chip enables are registered at rising edge of

clock when either Address Strobe Processor (ADSP) or

Address Strobe Controller (ADSC) are active. Subsequent

burst addresses can be internally generated as controlled by

the Advance pin (ADV).

Address, data inputs, and write controls are registered on-chip

to initiate a self-timed Write cycle.This part supports Byte Write

operations (see Pin Descriptions and Truth Table for further

details). Write cycles can be one to four bytes wide as

controlled by the byte write control inputs. GW active LOW

causes all bytes to be written. This device incorporates an

additional pipelined enable register which delays turning off

the output buffers an additional cycle when a deselect is

executed.This feature allows depth expansion without penal-

izing system performance.

• Provide high-performance 3-1-1-1 access rate

• User-selectable burst counter supporting Intel^

Pentium^interleaved or linear burst sequences

• Separate processor and controller address strobes

• Synchronous self-timed writes

• Asynchronous output enable

• Offered in JEDEC-standard lead-free 100-pin TQFP,

119-ball BGA and 165-Ball fBGA packages

• IEEE 1149.1 JTAG-Compatible Boundary Scan

• “ZZ” Sleep Mode Option

The CY7C1386D/CY7C1387D operates from a +3.3V core

power supply while all outputs operate with a +3.3V or a +2.5V

supply. All inputs and outputs are JEDEC-standard

JESD8-5-compatible.

Selection Guide

250 MHz

2.6

200 MHz

3.0

167 MHz

3.4

Unit

Maximum Access Time

Maximum Operating Current

Maximum CMOS Standby Current

350

300

275

Shaded areas contain advance information. Please contact your local Cypress sales representative for availability of these parts.

Notes:

1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.

2. CE and CE are for TQFP and 165 fBGA package only. 119 BGA is offered only in Single Chip Enable.

Cypress Semiconductor Corporation

•

3901 North First Street

•

San Jose, CA 95134

•

408-943-2600

Document #: 38-05545 Rev. *A

Revised November 3, 2004

12 3 4 5 6 7...29

中文翻译

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与CY7C1387D-167AXI相关器件

型号	品牌	获取价格	描述	数据表
CY7C1387D-167BGC	CYPRESS	获取价格	18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
CY7C1387D-167BGXC	CYPRESS	获取价格	18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
CY7C1387D-167BGXI	CYPRESS	获取价格	Cache SRAM, 1MX18, 3.4ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, LEAD FREE, BGA-119
CY7C1387D-167BZC	CYPRESS	获取价格	18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
CY7C1387D-167BZI	CYPRESS	获取价格	18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
CY7C1387D-167BZXC	CYPRESS	获取价格	18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
CY7C1387D-167BZXI	CYPRESS	获取价格	18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
CY7C1387D-200AC	CYPRESS	获取价格	Cache SRAM, 1MX18, 3ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
CY7C1387D-200AI	CYPRESS	获取价格	18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
CY7C1387D-200AXC	CYPRESS	获取价格	18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM

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