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CY7C1386D-200AC PDF预览

CY7C1386D-200AC

更新时间: 2023-08-15 00:00:00
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器
页数 文件大小 规格书
30页 509K
描述
Cache SRAM, 512KX36, 3ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100

CY7C1386D-200AC 数据手册

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CY7C1386D  
CY7C1387D  
PRELIMINARY  
18-Mbit (512K x 36/1M x 18) Pipelined DCD  
Sync SRAM  
Features  
Functional Description[1]  
• Supports bus operation up to 250 MHz  
The CY7C1386D/CY7C1387D SRAM integrates 524,288 x 36  
and 1,048,576 x 18 SRAM cells with advanced synchronous  
peripheral circuitry and a two-bit counter for internal burst  
operation. All synchronous inputs are gated by registers  
controlled by a positive-edge-triggered Clock Input (CLK). The  
synchronous inputs include all addresses, all data inputs,  
address-pipelining Chip Enable (CE1), depth-expansion Chip  
Enables (CE2 and CE3[2]), Burst Control inputs (ADSC, ADSP,  
• Available speed grades are 250, 225, 200 and 167 MHz  
• Registered inputs and outputs for pipelined operation  
• Optimal for performance (Double-Cycle deselect)  
• Depth expansion without wait state  
• 3.3V –5% and +10% core power supply (VDD  
• 2.5V/3.3V I/O operation  
)
ADV), Write Enables (  
, and BWE), and Global Write  
and  
BWX  
(GW). Asynchronous inputs include the Output Enable (OE)  
• Fast clock-to-output times  
and the ZZ pin.  
— 2.6 ns (for 250-MHz device)  
— 2.8 ns (for 225-MHz device)  
— 3.0 ns (for 200-MHz device)  
— 3.4 ns (for 167-MHz device)  
Addresses and chip enables are registered at rising edge of  
clock when either Address Strobe Processor (ADSP) or  
Address Strobe Controller (ADSC) are active. Subsequent  
burst addresses can be internally generated as controlled by  
the Advance pin (ADV).  
• Provide high-performance 3-1-1-1 access rate  
Address, data inputs, and write controls are registered on-chip  
to initiate a self-timed Write cycle.This part supports Byte Write  
operations (see Pin Descriptions and Truth Table for further  
details). Write cycles can be one to four bytes wide as  
controlled by the byte write control inputs. GW active LOW  
causes all bytes to be written. This device incorporates an  
additional pipelined enable register which delays turning off  
the output buffers an additional cycle when a deselect is  
executed.This feature allows depth expansion without penal-  
izing system performance.  
User-selectable burst counter supporting Intel  
Pentiuminterleaved or linear burst sequences  
• Separate processor and controller address strobes  
• Synchronous self-timed writes  
• Asynchronous output enable  
• Offered in JEDEC-standard 100-pin TQFP, 119-ball BGA  
and 165-Ball fBGA packages  
• IEEE 1149.1 JTAG-Compatible Boundary Scan  
• “ZZ” Sleep Mode Option  
The CY7C1386D/CY7C1387D operates from a +3.3V core  
power supply while all outputs operate with a +3.3V or a +2.5V  
supply. All inputs and outputs are JEDEC-standard  
JESD8-5-compatible.  
Selection Guide  
250 MHz  
225 MHz  
2.8  
200 MHz  
3.0  
167 MHz  
3.4  
Unit  
ns  
mA  
mA  
Maximum Access Time  
Maximum Operating Current  
Maximum CMOS Standby Current  
2.6  
350  
70  
325  
70  
300  
70  
275  
70  
Shaded areas contain advance information. Please contact your local Cypress sales representative for availability of these parts.  
Notes:  
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.  
2. CE and CE are for TQFP and 165 fBGA package only. 119 BGA is offered only in Single Chip Enable.  
3
2
Cypress Semiconductor Corporation  
3901 North First Street  
San Jose, CA 95134  
408-943-2600  
Document #: 38-05545 Rev. **  
Revised August 12, 2004  

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