Datasheet > 存储 > SRAM> CY7C1382F-167BGI

CY7C1382F-167BGI

更新时间： 2024-11-13 09:44:19

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器
页数	文件大小	规格书
30页	1186K
描述
18-Mbit (512K x 36/1M x 18) Pipelined SRAM

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CY7C1382F-167BGI 数据手册

CY7C1380D, CY7C1380F

CY7C1382D, CY7C1382F

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

Features

Functional Description ^[1]

• Supports bus operation up to 250 MHz

• Available speed grades are 250, 200, and 167 MHz

• Registered inputs and outputs for pipelined operation

• 3.3V core power supply

The

CY7C1380D/CY7C1382D/CY7C1380F/CY7C1382F

SRAM integrates 524,288 x 36 and 1,048,576 x 18 SRAM

cells with advanced synchronous peripheral circuitry and a

two-bit counter for internal burst operation. All synchronous

inputs are gated by registers controlled by a positive edge

triggered clock input (CLK). The synchronous inputs include

all addresses, all data inputs, address-pipelining chip enable

(CE₁), depth-expansion chip enables (CE₂and CE₃^[2]), burst

control inputs (ADSC, ADSP, and ADV), write enables (BW_X,

and BWE), and global write (GW). Asynchronous inputs

include the output enable (OE) and the ZZ pin.

• 2.5V or 3.3V IO power supply

• Fast clock-to-output times

— 2.6 ns (for 250 MHz device)

• Provides high-performance 3-1-1-1 access rate

• User selectable burst counter supporting Intel^®Pentium^®

interleaved or linear burst sequences

Addresses and chip enables are registered at rising edge of

clock when address strobe processor (ADSP) or address

strobe controller (ADSC) are active. Subsequent burst

addresses can be internally generated as they are controlled

by the advance pin (ADV).

• Separate processor and controller address strobes

• Synchronous self-timed write

• Asynchronous output enable

Address, data inputs, and write controls are registered on-chip

to initiate a self-timed write cycle.This part supports byte write

operations (see Pin Definitions on page 6 and Truth Table ^[4,

^{5, 6, 7, 8]}on page 9 for further details). Write cycles can be one

to two or four bytes wide as controlled by the byte write control

inputs. GW when active LOW causes all bytes to be written.

• Single cycle chip deselect

• CY7C1380D/CY7C1382D available in JEDEC-standard

Pb-free 100-pin TQFP, Pb-free and non Pb-free 165-ball

FBGA package. CY7C1380F/CY7C1382F available in

Pb-free and non Pb-free 119-ball BGA package

• IEEE 1149.1 JTAG-Compatible Boundary Scan

• ZZ sleep mode option

The

CY7C1380D/CY7C1382D/CY7C1380F/CY7C1382F

operates from a +3.3V core power supply while all outputs

operate with a +2.5 or +3.3V power supply. All inputs and

outputs are JEDEC-standard and JESD8-5-compatible.

Selection Guide

250 MHz

200 MHz

3.0

167 MHz

3.4

Unit

Maximum Access Time

2.6

350

Maximum Operating Current

Maximum CMOS Standby Current

300

275

Notes:

1. For best practices or recommendations, please refer to the Cypress application note AN1064, SRAM System Design Guidelines on www.cypress.com.

2. CE CE are for TQFP and 165 FBGA packages only. 119 BGA is offered only in 1 chip enable.

Cypress Semiconductor Corporation

Document #: 38-05543 Rev. *E

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised Feburary 07, 2007

12 3 4 5 6 7...30

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与CY7C1382F-167BGI相关器件

型号	品牌	获取价格	描述	数据表
CY7C1382F-167BGXC	CYPRESS	获取价格	18-Mbit (512K x 36/1M x 18) Pipelined SRAM
CY7C1382F-167BGXI	CYPRESS	获取价格	18-Mbit (512K x 36/1M x 18) Pipelined SRAM
CY7C1382F-200BGC	CYPRESS	获取价格	18-Mbit (512K x 36/1M x 18) Pipelined SRAM
CY7C1382F-200BGI	CYPRESS	获取价格	18-Mbit (512K x 36/1M x 18) Pipelined SRAM
CY7C1382F-200BGXC	CYPRESS	获取价格	18-Mbit (512K x 36/1M x 18) Pipelined SRAM
CY7C1382F-200BGXI	CYPRESS	获取价格	18-Mbit (512K x 36/1M x 18) Pipelined SRAM
CY7C1382F-250BGC	CYPRESS	获取价格	18-Mbit (512K x 36/1M x 18) Pipelined SRAM
CY7C1382F-250BGI	CYPRESS	获取价格	18-Mbit (512K x 36/1M x 18) Pipelined SRAM
CY7C1382F-250BGXC	CYPRESS	获取价格	18-Mbit (512K x 36/1M x 18) Pipelined SRAM
CY7C1382F-250BGXI	CYPRESS	获取价格	18-Mbit (512K x 36/1M x 18) Pipelined SRAM

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