5秒后页面跳转
CY7C1380CV25-225BGC PDF预览

CY7C1380CV25-225BGC

更新时间: 2024-11-27 04:01:31
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器
页数 文件大小 规格书
33页 511K
描述
18-Mbit (512K x 36/1M x 18) Pipelined SRAM

CY7C1380CV25-225BGC 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:BGA
包装说明:14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119针数:119
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.81
最长访问时间:2.8 ns其他特性:PIPELINED ARCHITECTURE
最大时钟频率 (fCLK):225 MHzI/O 类型:COMMON
JESD-30 代码:R-PBGA-B119JESD-609代码:e0
长度:22 mm内存密度:18874368 bit
内存集成电路类型:CACHE SRAM内存宽度:36
湿度敏感等级:3功能数量:1
端子数量:119字数:524288 words
字数代码:512000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:512KX36输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:BGA
封装等效代码:BGA119,7X17,50封装形状:RECTANGULAR
封装形式:GRID ARRAY并行/串行:PARALLEL
峰值回流温度(摄氏度):220电源:2.5 V
认证状态:Not Qualified座面最大高度:2.4 mm
最大待机电流:0.06 A最小待机电流:2.38 V
子类别:SRAMs最大压摆率:0.325 mA
最大供电电压 (Vsup):2.625 V最小供电电压 (Vsup):2.375 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:TIN LEAD端子形式:BALL
端子节距:1.27 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:14 mm
Base Number Matches:1

CY7C1380CV25-225BGC 数据手册

 浏览型号CY7C1380CV25-225BGC的Datasheet PDF文件第2页浏览型号CY7C1380CV25-225BGC的Datasheet PDF文件第3页浏览型号CY7C1380CV25-225BGC的Datasheet PDF文件第4页浏览型号CY7C1380CV25-225BGC的Datasheet PDF文件第5页浏览型号CY7C1380CV25-225BGC的Datasheet PDF文件第6页浏览型号CY7C1380CV25-225BGC的Datasheet PDF文件第7页 
CY7C1380CV25  
CY7C1382CV25  
18-Mbit (512K x 36/1M x 18) Pipelined SRAM  
Features  
Functional Description[1]  
• Supports bus operation up to 250 MHz  
The CY7C1380CV25/CY7C1382CV25 SRAM integrates  
524,288 x 36 and 1,048,576 x 18 SRAM cells with advanced  
synchronous peripheral circuitry and a two-bit counter for  
internal burst operation. All synchronous inputs are gated by  
registers controlled by a positive-edge-triggered Clock Input  
(CLK). The synchronous inputs include all addresses, all data  
• Available speed grades are 250, 225, 200,166 and  
133 MHz  
• Registered inputs and outputs for pipelined operation  
• 2.5V core power supply  
• Fast clock-to-output times  
inputs, address-pipelining Chip Enable  
(
), depth-  
CE1  
[2]  
expansion Chip Enables (CE2 and  
), Burst Control  
CE3  
— 2.6 ns (for 250-MHz device)  
inputs ( ,  
and  
ADSC ADSP  
,
), Write Enables ( , and  
ADV  
BWX  
— 2.8 ns (for 225-MHz device)  
), and Global Write (  
BWE  
). Asynchronous inputs include  
GW  
— 3.0 ns (for 200-MHz device)  
the Output Enable ( ) and the ZZ pin.  
OE  
— 3.4 ns (for 166-MHz device)  
Addresses and chip enables are registered at rising edge of  
— 4.2 ns (for 133-MHz device)  
clock when either Address Strobe Processor (  
) or  
ADSP  
Address Strobe Controller (  
) are active. Subsequent  
ADSC  
• Provide high-performance 3-1-1-1 access rate  
burst addresses can be internally generated as controlled by  
the Advance pin ( ).  
• User-selectable burst counter supporting Intel  
Pentium interleaved or linear burst sequences  
ADV  
Address, data inputs, and write controls are registered on-chip  
to initiate a self-timed Write cycle.This part supports Byte Write  
operations (see Pin Descriptions and Truth Table for further  
details). Write cycles can be one to two or four bytes wide as  
• Separate processor and controller address strobes  
• Synchronous self-timed writes  
• Asynchronous output enable  
controlled by the byte write control inputs.  
when active  
GW  
• Single Cycle Chip Deselect  
causes all bytes to be written.  
LOW  
• Offered in JEDEC-standard 100-pin TQFP, 119-ball BGA  
The CY7C1380CV25/CY7C1382CV25 operates from a +2.5V  
core power supply. All outputs also operate with a +2.5 supply.  
All inputs and outputs are JEDEC-standard JESD8-5-  
compatible.  
and 165-Ball fBGA packages  
• IEEE 1149.1 JTAG-Compatible Boundary Scan  
• “ZZ” Sleep Mode Option  
Selection Guide  
250 MHz  
225 MHz  
2.8  
200 MHz  
3.0  
167 MHz  
3.4  
133 MHz  
4.2  
Unit  
ns  
mA  
mA  
Maximum Access Time  
Maximum Operating Current  
Maximum CMOS Standby Current  
2.6  
350  
70  
325  
70  
300  
70  
275  
70  
245  
70  
Shaded areas contain advance information. Please contact your local Cypress sales representative for availability of these parts.  
Notes:  
1. For best–practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.  
2. CE , CE are for TQFP and 165 fBGA package only. 119 BGA is offered only in 1 Chip Enable.  
3
2
Cypress Semiconductor Corporation  
3901 North First Street  
San Jose, CA 95134  
408-943-2600  
Document #: 38-05240 Rev. *C  
Revised May 11, 2004  

与CY7C1380CV25-225BGC相关器件

型号 品牌 获取价格 描述 数据表
CY7C1380CV25-225BGI CYPRESS

获取价格

512K x 36/1M x 18 Pipelined SRAM
CY7C1380CV25-225BZC CYPRESS

获取价格

18-Mbit (512K x 36/1M x 18) Pipelined SRAM
CY7C1380CV25-250AC CYPRESS

获取价格

18-Mbit (512K x 36/1M x 18) Pipelined SRAM
CY7C1380CV25-250BGC CYPRESS

获取价格

18-Mbit (512K x 36/1M x 18) Pipelined SRAM
CY7C1380CV25-250BZC CYPRESS

获取价格

18-Mbit (512K x 36/1M x 18) Pipelined SRAM
CY7C1380D CYPRESS

获取价格

18-Mbit (512K x 36/1M x 18) Pipelined SRAM
CY7C1380D_07 CYPRESS

获取价格

18-Mbit (512K x 36/1M x 18) Pipelined SRAM
CY7C1380D_11 CYPRESS

获取价格

18-Mbit (512 K × 36/1 M × 18) Pipelined SRAM
CY7C1380D_13 CYPRESS

获取价格

18-Mbit (512 K x 36/1 M x 18) Pipelined SRAM
CY7C1380D-167AXC CYPRESS

获取价格

18-Mbit (512K x 36/1M x 18) Pipelined SRAM