CY7C1360B
CY7C1362B
PRELIMINARY
256K x 36/512K x 18 Pipelined SRAM
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. All data outputs pass through
output registers controlled by the rising edge of the clock.
Maximum access delay from the clock rise is 2.6 ns (250 MHz
Features
• Supports bus operation up to 250 MHz
— Available speed grades are 250, 200, and 166 MHz
device).
• Fully registered inputs and outputs for pipelined
operation
• Single 3.3V power supply
• Supports 3.3V and 2.5V I/Os
• Fast clock-to-output times
— 2.6ns (for 250-MHz device)
The CY7C1360B and CY7C1362B support either the inter-
leaved burst sequence used by the Intel Pentium processor or
a linear burst sequence used by processors such as the
PowerPC™. The burst sequence is selected through the
MODE pin (Pin 31 and ball R3 for the TQFP and BGA
packages, respectively.) Accesses can be initiated by
asserting either the Processor Address Strobe (ADSP) or the
Controller Address Strobe (ADSC) at clock rise. Address
advancement through the burst sequence is controlled by the
ADV input. A 2-bit on-chip wraparound burst counter captures
the first address in a burst sequence and automatically incre-
ments the address for the rest of the burst access.
— 3.0ns (for 200-MHz device)
— 3.5 ns (for 166-MHz device)
• User-selectable burst counter supporting Intel®
Pentium® interleaved or linear burst sequences
• Separate processor and controller address strobes
• Synchronous self-timed writes
• Asynchronous output enable
• Single Cycle Chip Deselect
• Available as a 100-pin TQFP, 119-Ball BGA, 165-Ball
fBGA
Byte write operations are qualified with the Byte Write Select
(BWa,b,c,d for 1360B and BWa,b for 1362B) inputs. A Global
Write Enable (GW) overrides all byte write inputs and writes
data to all four bytes. All writes are conducted with on-chip
synchronous self-timed write circuitry.
Three synchronous Chip Selects (CE1, CE2, CE3) and an
asynchronous Output Enable (OE) provide for easy bank
selection and output three-state control. In order to provide
proper data during depth expansion, OE is masked during the
first clock of a read cycle when emerging from a deselected
state.
• TQFP Available with 3-Chip Enable and 2-Chip Enable
• IEEE 1149.1 JTAG-Compatible Boundary Scan
• “ZZ” Sleep Mode option and Stop Clock option
Functional Description
The CY7C1360B and CY7C1362B are 3.3V, 256K x 36 and
512K x 18 synchronous-pipelined cache SRAM, respectively.
D
CLK
Logic Block Diagram
Data-In REG.
CE
Q
ADV
A
x
GW
CE
CONTROL
and WRITE
LOGIC
256Kx36/
512Kx18
1
1360B
1362B
CE
CE
2
DQ
DQP
A
x
x
A
A
MEMORY
ARRAY
[17:0]
[18:0]
X
3
BWE
BW
DQ
DQ
a,b
a,b,c,d
DQ
X
x
DQP
BW
DQP
DQP
a,b,c,d
a,b
X
MODE
ADSP
ADSC
BW
BW
a,b,c,d
a,b
X
ZZ
OE
Selection Table
CY7C1360B-250
CY7C1362B-250
CY7C1360B-200
CY7C1362B-200
CY7C1360B-166
CY7C1362B-166
Unit
ns
Maximum Access Time
2.6
250
30
3.0
220
30
3.5
180
30
Maximum Operating Current
Commercial
mA
mA
Maximum CMOS Standby Current Commercial
Cypress Semiconductor Corporation
•
3901 North First Street
•
San Jose
•
CA 95134
•
408-943-2600
Document #: 38-05291 Rev. *A
Revised August 15, 2002