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CY7C1362B-250AJC PDF预览

CY7C1362B-250AJC

更新时间: 2024-11-17 07:31:47
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器
页数 文件大小 规格书
31页 805K
描述
Cache SRAM, 512KX18, 3.4ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100

CY7C1362B-250AJC 数据手册

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CY7C1360B  
CY7C1362B  
PRELIMINARY  
256K x 36/512K x 18 Pipelined SRAM  
All synchronous inputs pass through input registers controlled  
by the rising edge of the clock. All data outputs pass through  
output registers controlled by the rising edge of the clock.  
Maximum access delay from the clock rise is 2.6 ns (250 MHz  
Features  
• Supports bus operation up to 250 MHz  
— Available speed grades are 250, 200, and 166 MHz  
device).  
• Fully registered inputs and outputs for pipelined  
operation  
• Single 3.3V power supply  
• Supports 3.3V and 2.5V I/Os  
• Fast clock-to-output times  
— 2.6ns (for 250-MHz device)  
The CY7C1360B and CY7C1362B support either the inter-  
leaved burst sequence used by the Intel Pentium processor or  
a linear burst sequence used by processors such as the  
PowerPC. The burst sequence is selected through the  
MODE pin (Pin 31 and ball R3 for the TQFP and BGA  
packages, respectively.) Accesses can be initiated by  
asserting either the Processor Address Strobe (ADSP) or the  
Controller Address Strobe (ADSC) at clock rise. Address  
advancement through the burst sequence is controlled by the  
ADV input. A 2-bit on-chip wraparound burst counter captures  
the first address in a burst sequence and automatically incre-  
ments the address for the rest of the burst access.  
— 3.0ns (for 200-MHz device)  
— 3.5 ns (for 166-MHz device)  
• User-selectable burst counter supporting Intel®  
Pentium® interleaved or linear burst sequences  
Separate processor and controller address strobes  
Synchronous self-timed writes  
Asynchronous output enable  
Single Cycle Chip Deselect  
Available as a 100-pin TQFP, 119-Ball BGA, 165-Ball  
fBGA  
Byte write operations are qualified with the Byte Write Select  
(BWa,b,c,d for 1360B and BWa,b for 1362B) inputs. A Global  
Write Enable (GW) overrides all byte write inputs and writes  
data to all four bytes. All writes are conducted with on-chip  
synchronous self-timed write circuitry.  
Three synchronous Chip Selects (CE1, CE2, CE3) and an  
asynchronous Output Enable (OE) provide for easy bank  
selection and output three-state control. In order to provide  
proper data during depth expansion, OE is masked during the  
first clock of a read cycle when emerging from a deselected  
state.  
TQFP Available with 3-Chip Enable and 2-Chip Enable  
IEEE 1149.1 JTAG-Compatible Boundary Scan  
• “ZZSleep Mode option and Stop Clock option  
Functional Description  
The CY7C1360B and CY7C1362B are 3.3V, 256K x 36 and  
512K x 18 synchronous-pipelined cache SRAM, respectively.  
D
CLK  
Logic Block Diagram  
Data-In REG.  
CE  
Q
ADV  
A
x
GW  
CE  
CONTROL  
and WRITE  
LOGIC  
256Kx36/  
512Kx18  
1
1360B  
1362B  
CE  
CE  
2
DQ  
DQP  
A
x
x
A
A
MEMORY  
ARRAY  
[17:0]  
[18:0]  
X
3
BWE  
BW  
DQ  
DQ  
a,b  
a,b,c,d  
DQ  
X
x
DQP  
BW  
DQP  
DQP  
a,b,c,d  
a,b  
X
MODE  
ADSP  
ADSC  
BW  
BW  
a,b,c,d  
a,b  
X
ZZ  
OE  
Selection Table  
CY7C1360B-250  
CY7C1362B-250  
CY7C1360B-200  
CY7C1362B-200  
CY7C1360B-166  
CY7C1362B-166  
Unit  
ns  
Maximum Access Time  
2.6  
250  
30  
3.0  
220  
30  
3.5  
180  
30  
Maximum Operating Current  
Commercial  
mA  
mA  
Maximum CMOS Standby Current Commercial  
Cypress Semiconductor Corporation  
3901 North First Street  
San Jose  
CA 95134  
408-943-2600  
Document #: 38-05291 Rev. *A  
Revised August 15, 2002  

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