Datasheet > 存储 > SRAM> CY7C1361B-100AJI

CY7C1361B-100AJI

更新时间： 2024-11-26 22:19:23

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器
页数	文件大小	规格书
34页	820K
描述
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

CY7C1361B-100AJI 数据手册

CY7C1361B

CY7C1363B

9-Mbit (256K x 36/512K x 18)

Flow-Through SRAM

Features

Functional Description^[1]

• Supports 133-MHz bus operations

• 256K X 36/512K X 18 common I/O

The CY7C1361B/CY7C1363B is a 3.3V, 256K x 36 and 512K

x 18 Synchronous Flow through SRAMs, respectively

designed to interface with high-speed microprocessors with

minimum glue logic. Maximum access delay from clock rise is

6.5 ns (133-MHz version). A 2-bit on-chip counter captures the

first address in a burst and increments the address automati-

cally for the rest of the burst access. All synchronous inputs

are gated by registers controlled by a positive-edge-triggered

Clock Input (CLK). The synchronous inputs include all

• 3.3V –5% and +10% core power supply (V_DD

)

• 2.5V or 3.3V I/O supply (V_DDQ

• Fast clock-to-output times

— 6.5 ns (133-MHz version)

)

— 7.5 ns (117-MHz version)

— 8.5 ns (100-MHz version)

addresses, all data inputs, address-pipelining Chip Enable

[2]

(

), depth-expansion Chip Enables (CE and

), Burst

CE₃

• Provide high-performance 2-1-1-1 access rate

CE₁

Control inputs (

), Write Enables

(

ADV

BW_x

• User-selectable burst counter supporting Intel^

and

ADSC ADSP

Pentium^interleaved or linear burst sequences

), and Global Write (

BWE

). Asynchronous

and

inputs

(

)

and the ZZ pin

include the Output Enable

• Separate processor and controller address strobes

• Synchronous self-timed write

The CY7C1361B/CY7C1363B allows either interleaved or

linear burst sequences, selected by the MODE input pin. A

HIGH selects an interleaved burst sequence, while a LOW

selects a linear burst sequence. Burst accesses can be

initiated with the Processor Address Strobe (ADSP) or the

cache Controller Address Strobe (ADSC) inputs. Address

advancement is controlled by the Address Advancement

(ADV) input.

• Asynchronous output enable

• Offered in JEDEC-standard 100-pin TQFP, 119-ball BGA

and 165-ball fBGA packages

— Both 2 and 3 Chip Enable Options for TQFP

• JTAG boundary scan for BGA and fBGA packages

• “ZZ” Sleep Mode option

Addresses and chip enables are registered at rising edge of

clock when either Address Strobe Processor (

) or

ADSP

Address Strobe Controller (

) are active. Subsequent

ADSC

burst addresses can be internally generated as controlled by

the Advance pin ( ).

ADV

The CY7C1361B/CY7C1363B operates from a +3.3V core

power supply while all outputs may operate with either a +2.5

or +3.3V supply. All inputs and outputs are JEDEC-standard

JESD8-5-compatible.

Selection Guide

133 MHz

117 MHz

7.5

100 MHz

8.5

Unit

Maximum Access Time

Maximum Operating Current

Maximum CMOS Standby Current

6.5

250

220

180

Notes:

1. For best–practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.

2. CE is for A version of TQFP (3 Chip Enable Option) and 165 fBGA package only. 119 BGA is offered only in 2 Chip Enable.

Cypress Semiconductor Corporation

•

3901 North First Street

•

San Jose, CA 95134

•

408-943-2600

Document #: 38-05302 Rev. *B

Revised April 20, 2004

12 3 4 5 6 7...34

中文翻译

下载PDF

与CY7C1361B-100AJI相关器件

型号	品牌	获取价格	描述	数据表
CY7C1361B-100BGC	CYPRESS	获取价格	9-Mbit (256K x 36/512K x 18) Flow-Through SRAM
CY7C1361B-100BGI	CYPRESS	获取价格	9-Mbit (256K x 36/512K x 18) Flow-Through SRAM
CY7C1361B-100BZC	CYPRESS	获取价格	9-Mbit (256K x 36/512K x 18) Flow-Through SRAM
CY7C1361B-100BZI	CYPRESS	获取价格	9-Mbit (256K x 36/512K x 18) Flow-Through SRAM
CY7C1361B-117AC	CYPRESS	获取价格	9-Mbit (256K x 36/512K x 18) Flow-Through SRAM
CY7C1361B-117AI	CYPRESS	获取价格	9-Mbit (256K x 36/512K x 18) Flow-Through SRAM
CY7C1361B-117AJC	CYPRESS	获取价格	9-Mbit (256K x 36/512K x 18) Flow-Through SRAM
CY7C1361B-117AJI	CYPRESS	获取价格	9-Mbit (256K x 36/512K x 18) Flow-Through SRAM
CY7C1361B-117BGC	CYPRESS	获取价格	9-Mbit (256K x 36/512K x 18) Flow-Through SRAM
CY7C1361B-117BGI	CYPRESS	获取价格	9-Mbit (256K x 36/512K x 18) Flow-Through SRAM

与CY7C1361B-100AJI相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

46
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

35
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

64
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

61

产品中心

服务支持

精选活动

关于我们

帮助中心

CY7C1361B-100AJI

CY7C1361B-100AJI 数据手册

与CY7C1361B-100AJI相关器件

与CY7C1361B-100AJI相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

CY7C1361B-100AJI

CY7C1361B-100AJI 数据手册

与CY7C1361B-100AJI相关器件

与CY7C1361B-100AJI相关文章

您还可以找

您在本页遇到什么问题？