Datasheet > CY7C1357A

CY7C1357A

更新时间： 2024-11-19 05:19:15

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器
页数	文件大小	规格书
28页	563K
描述
256K x 36/512K x 18 Synchronous Flow-Thru SRAM with NoBL Architecture

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CY7C1357A 数据手册

CY7C1357A

CY7C1355A

256K x 36/512K x 18 Synchronous Flow-Thru

SRAM with NoBL™ Architecture

All synchronous inputs are gated by registers controlled by a

positive-edge-triggered Clock Input (CLK). The synchronous

Features

• Zero Bus Latency, no dead cycles between write and

read cycles

inputs include all addresses, all data inputs, depth-expansion

Chip Enables (CE, CE₂, and CE₃), Cycle Start Input (ADV/LD),

Clock Enable (CEN), Byte Write Enables (BWa, BWb, BWc,

and BWd), and read-write control (WEN). BWc and BWd apply

to CY7C1355A only.

• Fast access times: 2.5 ns, 3.0 ns, and 3.5 ns

• Fast clock speed: 133, 117, and 100 MHz

• Fast OE access time: 6.5, 7.0, and 7.5ns

• Internally synchronized registered outputs eliminate

the need to control OE

Address and control signals are applied to the SRAM during

one clock cycle, and one cycle later, its associated data

occurs, either read or write.

• 3.3V –5% and +5% power supply

• 3.3V or 2.5V I/O supply

• Single WEN (READ/WRITE) control pin

• Positive clock-edge triggered, address, data, and

control signal registers for fully pipelined applications

Clock Enable (CEN) pin allows operation of the

CY7C1355A/CY7C1357A to be suspended as long as

necessary. All synchronous inputs are ignored when (CEN) is

HIGH and the internal device registers will hold their previous

values.

• Interleaved or linear four-word burst capability

• Individual byte write (BWa–BWd) control (may be tied

LOW)

• CEN pin to enable clock and suspend operations

• Three chip enables for simple depth expansion

• Automatic Power-down feature available using ZZ

mode or CE deselect.

There are three Chip Enable pins (CE, CE₂, CE₃) that allow

the user to deselect the device when desired. If any one of

these three are not active when ADV/LD is LOW, no new

memory operation can be initiated and any burst cycle in

progress is stopped. However, any pending data transfers

(read or write) will be completed. The data bus will be in

high-impedance state one cycle after chip is deselected or a

write cycle is initiated.

• JTAG boundary scan (except CY7C1357A)

The CY7C1355A and CY7C1357A have an on-chip 2-bit burst

counter. In the burst mode, the CY7C1355A and CY7C1357A

provide four cycles of data for a single address presented to

the SRAM. The order of the burst sequence is defined by the

MODE input pin. The MODE pin selects between linear and

interleaved burst sequence. The ADV/LD signal is used to load

a new external address (ADV/LD = LOW) or increment the

internal burst counter (ADV/LD = HIGH)

• Low-profile 119-bump, 14-mm × 22-mm BGA (Ball Grid

Array) for CY7C1355A, and 100-pin TQFP packages for

both devices

Functional Description

The CY7C1355A and CY7C1357A SRAMs are designed to

eliminate dead cycles when transitions from READ to WRITE

or vice versa. These SRAMs are optimized for 100 percent bus

utilization and achieves Zero Bus Latency (ZBL). They

integrate 262,144 × 36 and 524,288 × 18 SRAM cells, respec-

tively, with advanced synchronous peripheral circuitry and a

2-bit counter for internal burst operation. These employ

high-speed, low power CMOS designs using advanced

triple-layer polysilicon, double-layer metal technology. Each

memory cell consists of Six transistors.

Output Enable (OE), Sleep Enable (ZZ) and burst sequence

select (MODE) are the asynchronous signals. OE can be used

to disable the outputs at any given time. ZZ may be tied to

LOW if it is not used.

Four pins are used to implement JTAG test capabilities. The

JTAG circuitry is used to serially shift data to and from the

device. JTAG inputs use LVTTL/LVCMOS levels to shift data

during this testing mode of operation.

Selection Guide

7C1355A-133

7C1357A-133

7C1355A-117

7C1357A-117

7C1355A-100

7C1357A-100

Unit

Maximum Access Time

6.5

410

7.5

350

Maximum Operating Current

Maximum CMOS Standby Current

385

Cypress Semiconductor Corporation

•

3901 North First Street

•

San Jose

•

CA 95134

•

408-943-2600

Document #: 38-05265 Rev. *A

Revised August 23, 2002

12 3 4 5 6 7...28

中文翻译

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与CY7C1357A相关器件

型号	品牌	获取价格	描述	数据表
CY7C1357A-100AC	CYPRESS	获取价格	256K x 36/512K x 18 Synchronous Flow-Thru SRAM with NoBL Architecture
CY7C1357A-100AC	ROCHESTER	获取价格	512KX18 ZBT SRAM, 7.5ns, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
CY7C1357A-100AI	CYPRESS	获取价格	256K x 36/512K x 18 Synchronous Flow-Thru SRAM with NoBL Architecture
CY7C1357A-100BGC	CYPRESS	获取价格	ZBT SRAM, 512KX18, 7.5ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, FBGA-119
CY7C1357A-100BGI	CYPRESS	获取价格	ZBT SRAM, 512KX18, 7.5ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, FBGA-119
CY7C1357A1-100AC	CYPRESS	获取价格	ZBT SRAM, 512KX18, 8ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
CY7C1357A1-100BGI	CYPRESS	获取价格	ZBT SRAM, 512KX18, 8ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, FBGA-119
CY7C1357A-117AC	CYPRESS	获取价格	ZBT SRAM, 512KX18, 7ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
CY7C1357A-117BGC	CYPRESS	获取价格	ZBT SRAM, 512KX18, 7ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, FBGA-119
CY7C1357A-117BGI	CYPRESS	获取价格	ZBT SRAM, 512KX18, 7ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, FBGA-119

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