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CY7C1356DV25-250BGI PDF预览

CY7C1356DV25-250BGI

更新时间： 2024-11-08 06:51:39
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器
页数 文件大小 规格书
29页 847K
描述
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL Architecture

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中文翻译

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CY7C1356DV25-250BGI 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：BGA
包装说明：14 X 22 MM, 2.40 MM HEIGHT, BGA-119针数：119
Reach Compliance Code：compliantECCN代码：3A991.B.2.A
HTS代码：8542.32.00.41风险等级：5.92
最长访问时间：2.8 ns其他特性：PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)：250 MHzI/O 类型：COMMON
JESD-30 代码：R-PBGA-B119JESD-609代码：e0
长度：22 mm内存密度：9437184 bit
内存集成电路类型：ZBT SRAM内存宽度：18
湿度敏感等级：3功能数量：1
端子数量：119字数：524288 words
字数代码：512000工作模式：SYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：512KX18输出特性：3-STATE
封装主体材料：PLASTIC/EPOXY封装代码：BGA
封装等效代码：BGA119,7X17,50封装形状：RECTANGULAR
封装形式：GRID ARRAY并行/串行：PARALLEL
峰值回流温度（摄氏度）：220电源：2.5 V
认证状态：Not Qualified座面最大高度：2.4 mm
最大待机电流：0.04 A最小待机电流：2.38 V
子类别：SRAMs最大压摆率：0.25 mA
最大供电电压 (Vsup)：2.625 V最小供电电压 (Vsup)：2.375 V
标称供电电压 (Vsup)：2.5 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：TIN LEAD端子形式：BALL
端子节距：1.27 mm端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：14 mm
Base Number Matches：1

CY7C1356DV25-250BGI 数据手册

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CY7C1354DV25, CY7C1356DV25  
9-Mbit (256K x 36/512K x 18)  
Pipelined SRAM with NoBL™ Architecture  
Features  
Functional Description  
The CY7C1354DV25 and CY7C1356DV25 are 2.5V, 256K x 36  
and 512K x 18 Synchronous pipelined burst SRAMs with No Bus  
Latency™ (NoBL™) logic, respectively. They are designed to  
support unlimited true back to back read and write operations  
with no wait states. The CY7C1354DV25 and CY7C1356DV25  
are equipped with the advanced (NoBL) logic required to enable  
consecutive read and write operations with data being trans-  
ferred on every clock cycle. This feature dramatically improves  
the throughput of data in systems that require frequent write and  
read transitions. The CY7C1354DV25 and CY7C1356DV25 are  
pin compatible with and functionally equivalent to ZBT devices.  
■
■
■
■
Pin compatible with and functionally equivalent to ZBT™  
Supports 250 MHz bus operations with zero wait states  
Available speed grades are 250, 200, and 166 MHz  
Internally self timed output buffer control to eliminate the need  
to use asynchronous OE  
■
■
■
■
Fully registered (inputs and outputs) for pipelined operation  
Byte Write capability  
Single 2.5V power supply (VDD  
Fast clock-to-output times  
)
All synchronous inputs pass through input registers controlled by  
the rising edge of the clock. All data outputs pass through output  
registers controlled by the rising edge of the clock. The clock  
input is qualified by the Clock Enable (CEN) signal, which when  
deasserted suspends operation and extends the previous clock  
cycle.  
❐
2.8 ns (for 250 MHz device)  
■
■
■
Clock Enable (CEN) pin to suspend operation  
Synchronous self timed writes  
Write operations are controlled by the Byte Write Selects  
(BWa–BWd for CY7C1354DV25 and BWa–BWb for  
CY7C1356DV25) and a Write Enable (WE) input. All writes are  
conducted with on-chip synchronous self timed write circuitry.  
Available in Pb-free 100-pin TQFP package, Pb-free and non  
Pb-free 119-ball BGA package, and 165-ball FBGA package  
■
■
■
IEEE 1149.1 JTAG compatible boundary scan  
Burst capability–linear or interleaved burst order  
“ZZ” Sleep mode and Stop Clock options  
Three synchronous Chip Enables (CE1, CE2, CE3) and an  
asynchronous Output Enable (OE) provide easy bank selection  
and output tri-state control. To avoid bus contention, the output  
drivers are synchronously tri-stated during the data portion of a  
write sequence. For best practices recommendations, please  
refer to the Cypress application note System Design Guidelines  
on www.cypress.com.  
Selection Guide  
Description  
250 MHz  
2.8  
200 MHz  
3.2  
166 MHz  
3.5  
Unit  
ns  
Maximum Access Time  
Maximum Operating Current  
250  
220  
180  
mA  
mA  
Maximum CMOS Standby Current  
40  
40  
40  
Cypress Semiconductor Corporation  
Document #: 001-48974 Rev. *A  
•
198 Champion Court  
•
San Jose  
,
CA 95134-1709  
•
408-943-2600  
Revised July 31, 2009  
[+] Feedback  
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与CY7C1356DV25-250BGI相关器件

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CY7C1356DV25-250BGXC CYPRESS

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 		9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL Architecture
CY7C1356DV25-250BGXI CYPRESS

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 		9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL Architecture
CY7C1356DV25-250BZC CYPRESS

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 		9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL Architecture
CY7C1356DV25-250BZI CYPRESS

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 		9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL Architecture
CY7C1356DV25-250BZXC CYPRESS

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 		9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL Architecture
CY7C1356DV25-250BZXI CYPRESS

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 		9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL Architecture
CY7C1356V25 ETC

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 		Memory
CY7C1356V25-100AC CYPRESS

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 		ZBT SRAM, 512KX18, 5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
CY7C1356V25-100BAC CYPRESS

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 		ZBT SRAM, 512KX18, 5ns, CMOS, PBGA119, BGA-119
CY7C1356V25-133BGC CYPRESS

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 		ZBT SRAM, 512KX18, 4.2ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119

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