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CY7C1351G-117BGC PDF预览

CY7C1351G-117BGC

更新时间： 2024-11-26 21:10:59
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 时钟静态存储器内存集成电路
页数 文件大小 规格书
14页 284K
描述
ZBT SRAM, 128KX36, 7.5ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119

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CY7C1351G-117BGC 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete包装说明：14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119
Reach Compliance Code：compliant风险等级：5.92
最长访问时间：7.5 ns其他特性：FLOW-THROUGH ARCHITECTURE
最大时钟频率 (fCLK)：117 MHzI/O 类型：COMMON
JESD-30 代码：R-PBGA-B119长度：22 mm
内存密度：4718592 bit内存集成电路类型：ZBT SRAM
内存宽度：36湿度敏感等级：1
功能数量：1端子数量：119
字数：131072 words字数代码：128000
工作模式：SYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：128KX36
输出特性：3-STATE封装主体材料：PLASTIC/EPOXY
封装代码：HBGA封装等效代码：BGA119,7X17,50
封装形状：RECTANGULAR封装形式：GRID ARRAY, HEAT SINK/SLUG
并行/串行：PARALLEL峰值回流温度（摄氏度）：225
电源：2.5/3.3,3.3 V认证状态：Not Qualified
座面最大高度：2.4 mm最大待机电流：0.04 A
最小待机电流：3.14 V子类别：SRAMs
最大压摆率：0.22 mA最大供电电压 (Vsup)：3.63 V
最小供电电压 (Vsup)：3.135 V标称供电电压 (Vsup)：3.3 V
表面贴装：YES技术：CMOS
温度等级：COMMERCIAL端子形式：BALL
端子节距：1.27 mm端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：14 mm
Base Number Matches：1

CY7C1351G-117BGC 数据手册

 浏览型号CY7C1351G-117BGC的Datasheet PDF文件第2页浏览型号CY7C1351G-117BGC的Datasheet PDF文件第3页浏览型号CY7C1351G-117BGC的Datasheet PDF文件第4页浏览型号CY7C1351G-117BGC的Datasheet PDF文件第5页浏览型号CY7C1351G-117BGC的Datasheet PDF文件第6页浏览型号CY7C1351G-117BGC的Datasheet PDF文件第7页 
CY7C1351G  
PRELIMINARY  
4-Mbit (128K x 36) Flow-through SRAM  
with NoBL™ Architecture  
Functional Description[1]  
Features  
• Can support up to 133-MHz bus operations with zero  
wait states  
The CY7C1351G is a 3.3V, 128K x 36 Synchronous  
Flow-through Burst SRAM designed specifically to support  
unlimited true back-to-back Read/Write operations without the  
insertion of wait states. The CY7C1351G is equipped with the  
advanced No Bus Latency™ (NoBL™) logic required to  
enable consecutive Read/Write operations with data being  
transferred on every clock cycle. This feature dramatically  
improves the throughput of data through the SRAM, especially  
in systems that require frequent Write-Read transitions.  
— Data is transferred on every clock  
• Pin compatible and functionally equivalent to ZBT™  
devices  
• Internally self-timed output buffer control to eliminate  
the need to use OE  
• Registered inputs for flow-through operation  
• Byte Write capability  
All synchronous inputs pass through input registers controlled  
by the rising edge of the clock. The clock input is qualified by  
the Clock Enable (CEN) signal, which when deasserted  
suspends operation and extends the previous clock cycle.  
Maximum access delay from the clock rise is 6.5 ns (133-MHz  
device).  
• 128K x 36 common I/O architecture  
• 2.5V / 3.3V I/O power supply  
• Fast clock-to-output times  
— 6.5 ns (for 133-MHz device)  
Write operations are controlled by the four Byte Write Select  
(BW[A:D]) and a Write Enable (WE) input. All writes are  
conducted with on-chip synchronous self-timed write circuitry.  
— 7.5 ns (for 117-MHz device)  
— 8.0 ns (for 100-MHz device)  
Three synchronous Chip Enables (CE1, CE2, CE3) and an  
asynchronous Output Enable (OE) provide for easy bank  
selection and output tri-state control. In order to avoid bus  
contention, the output drivers are synchronously tri-stated  
during the data portion of a write sequence.  
• Clock Enable (CEN) pin to suspend operation  
• Synchronous self-timed writes  
• Asynchronous Output Enable  
• Lead-Free 100 TQFP and 119 BGA packages  
• Burst Capability—linear or interleaved burst order  
• Low standby power  
Logic Block Diagram  
ADDRESS  
A0, A1, A  
REGISTER  
A1  
A1'  
Q1  
D1  
A0  
A0'  
Q0  
D0  
MODE  
C
BURST  
LOGIC  
CE  
ADV/LD  
C
CLK  
CEN  
WRITE ADDRESS  
REGISTER  
O
U
T
P
U
T
D
A
T
S
E
N
S
ADV/LD  
A
B
U
F
MEMORY  
ARRAY  
BWA  
BWB  
BWC  
BWD  
WRITE  
DRIVERS  
E
WRITE REGISTRY  
AND DATA COHERENCY  
CONTROL LOGIC  
S
T
E
E
R
I
DQs  
DQP  
DQP  
DQP  
DQP  
A
B
C
D
A
M
P
F
E
R
S
S
WE  
E
N
G
INPUT  
REGISTER  
E
OE  
READ LOGIC  
CE1  
CE2  
CE3  
SLEEP  
Control  
ZZ  
Note:  
1. For best–practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.  
Cypress Semiconductor Corporation  
Document #: 38-05513 Rev. *A  
•
3901 North First Street  
•
San Jose, CA 95134  
•
408-943-2600  
Revised October 14, 2004  
1234567...14

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与CY7C1351G-117BGC相关器件

型号 品牌 获取价格 描述 数据表
CY7C1351G-117BGI CYPRESS

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 		ZBT SRAM, 128KX36, 7.5ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119
CY7C1351G-133AXC CYPRESS

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 		4-Mbit (128K x 36) Flow-through SRAM with NoB
CY7C1351G-133AXI CYPRESS

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 		4-Mbit (128K x 36) Flow-through SRAM with NoB
CY7C1351G-133AXIT CYPRESS

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 		ZBT SRAM, 128KX36, 6.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, MS-026, TQ
CY7C1351G-133BGC CYPRESS

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 		4-Mbit (128K x 36) Flow-through SRAM with NoB
CY7C1351G-133BGCT CYPRESS

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 		ZBT SRAM, 128KX36, 6.5ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, BGA-119
CY7C1351G-133BGI CYPRESS

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 		4-Mbit (128K x 36) Flow-through SRAM with NoB
CY7C1351G-133BGXC CYPRESS

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 		4-Mbit (128K x 36) Flow-through SRAM with NoB
CY7C1351G-133BGXI CYPRESS

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 		4-Mbit (128K x 36) Flow-through SRAM with NoB
CY7C1352 CYPRESS

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 		256K x18 Pipelined SRAM with NoBL Architecture

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