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CY7C1351G-100BGCT PDF预览

CY7C1351G-100BGCT

更新时间： 2024-11-26 20:00:35
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器内存集成电路
页数 文件大小 规格书
14页 376K
描述
ZBT SRAM, 128KX36, 8ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, BGA-119

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CY7C1351G-100BGCT 技术参数

生命周期：Obsolete零件包装代码：BGA
包装说明：BGA,针数：119
Reach Compliance Code：unknownECCN代码：3A991.B.2.A
HTS代码：8542.32.00.41风险等级：5.77
最长访问时间：8 ns其他特性：FLOW THROUGH ARCHITECTURE
JESD-30 代码：R-PBGA-B119JESD-609代码：e0
长度：22 mm内存密度：4718592 bit
内存集成电路类型：ZBT SRAM内存宽度：36
功能数量：1端子数量：119
字数：131072 words字数代码：128000
工作模式：SYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：128KX36
封装主体材料：PLASTIC/EPOXY封装代码：BGA
封装形状：RECTANGULAR封装形式：GRID ARRAY
并行/串行：PARALLEL认证状态：Not Qualified
座面最大高度：2.4 mm最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：3.135 V标称供电电压 (Vsup)：3.3 V
表面贴装：YES技术：CMOS
温度等级：COMMERCIAL端子面层：TIN LEAD
端子形式：BALL端子节距：1.27 mm
端子位置：BOTTOM宽度：14 mm
Base Number Matches：1

CY7C1351G-100BGCT 数据手册

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CY7C1351G  
4-Mbit (128K x 36) Flow-through SRAM  
with NoBL™ Architecture  
Functional Description[1]  
Features  
• Can support up to 133-MHz bus operations with zero  
wait states  
The CY7C1351G is a 3.3V, 128K x 36 Synchronous  
Flow-through Burst SRAM designed specifically to support  
unlimited true back-to-back Read/Write operations without the  
insertion of wait states. The CY7C1351G is equipped with the  
advanced No Bus Latency™ (NoBL™) logic required to  
enable consecutive Read/Write operations with data being  
transferred on every clock cycle. This feature dramatically  
improves the throughput of data through the SRAM, especially  
in systems that require frequent Write-Read transitions.  
— Data is transferred on every clock  
• Pin compatible and functionally equivalent to ZBT™  
devices  
• Internally self-timed output buffer control to eliminate  
the need to use OE  
• Registered inputs for flow-through operation  
• Byte Write capability  
All synchronous inputs pass through input registers controlled  
by the rising edge of the clock. The clock input is qualified by  
the Clock Enable (CEN) signal, which when deasserted  
suspends operation and extends the previous clock cycle.  
Maximum access delay from the clock rise is 6.5 ns (133-MHz  
device).  
• 128K x 36 common I/O architecture  
• 2.5V/3.3V I/O power supply (VDDQ  
)
• Fast clock-to-output times  
— 6.5 ns (for 133-MHz device)  
Write operations are controlled by the four Byte Write Select  
(BW[A:D]) and a Write Enable (WE) input. All writes are  
conducted with on-chip synchronous self-timed write circuitry.  
• Clock Enable (CEN) pin to suspend operation  
• Synchronous self-timed writes  
Three synchronous Chip Enables (CE1, CE2, CE3) and an  
asynchronous Output Enable (OE) provide for easy bank  
selection and output tri-state control. In order to avoid bus  
contention, the output drivers are synchronously tri-stated  
during the data portion of a write sequence.  
• Asynchronous Output Enable  
• Available in lead-free 100-Pin TQFP package, lead-free  
and non-lead-free 119-Ball BGA package  
• Burst Capability—linear or interleaved burst order  
• Low standby power  
Logic Block Diagram  
ADDRESS  
A0, A1, A  
REGISTER  
A1  
A1'  
A0'  
D1  
A0  
Q1  
Q0  
D0  
MODE  
BURST  
LOGIC  
CE  
ADV/LD  
C
CLK  
CEN  
C
WRITE ADDRESS  
REGISTER  
O
U
T
P
U
T
D
A
T
S
E
N
S
ADV/LD  
A
B
U
F
MEMORY  
ARRAY  
BWA  
BWB  
BWC  
BWD  
WRITE  
DRIVERS  
E
WRITE REGISTRY  
AND DATA COHERENCY  
CONTROL LOGIC  
S
T
E
E
R
I
DQs  
DQP  
DQP  
DQP  
DQP  
A
B
C
D
A
M
P
F
E
R
S
S
WE  
E
N
G
INPUT  
REGISTER  
E
OE  
READ LOGIC  
CE1  
CE2  
CE3  
SLEEP  
Control  
ZZ  
Note:  
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.  
Cypress Semiconductor Corporation  
Document #: 38-05513 Rev. *D  
•
198 Champion Court  
•
San Jose, CA 95134-1709  
•
408-943-2600  
Revised July 4, 2006  
1234567...14

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与CY7C1351G-100BGCT相关器件

型号 品牌 获取价格 描述 数据表
CY7C1351G-100BGI CYPRESS

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 		4-Mbit (128K x 36) Flow-through SRAM with NoB
CY7C1351G-100BGXC CYPRESS

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 		4-Mbit (128K x 36) Flow-through SRAM with NoB
CY7C1351G-100BGXI CYPRESS

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 		4-Mbit (128K x 36) Flow-through SRAM with NoB
CY7C1351G-117AXI CYPRESS

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 		ZBT SRAM, 128KX36, 7.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, PLASTIC, M
CY7C1351G-117BGC CYPRESS

获取价格

 		ZBT SRAM, 128KX36, 7.5ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119
CY7C1351G-117BGI CYPRESS

获取价格

 		ZBT SRAM, 128KX36, 7.5ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119
CY7C1351G-133AXC CYPRESS

获取价格

 		4-Mbit (128K x 36) Flow-through SRAM with NoB
CY7C1351G-133AXI CYPRESS

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 		4-Mbit (128K x 36) Flow-through SRAM with NoB
CY7C1351G-133AXIT CYPRESS

获取价格

 		ZBT SRAM, 128KX36, 6.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, MS-026, TQ
CY7C1351G-133BGC CYPRESS

获取价格

 		4-Mbit (128K x 36) Flow-through SRAM with NoB

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