Datasheet > CY7C1351F-117BGI

CY7C1351F-117BGI

更新时间： 2024-11-25 22:09:43

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器
页数	文件大小	规格书
15页	427K
描述
4-Mb (128K x 36) Flow-through SRAM with NoBL⑩ Architecture

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CY7C1351F-117BGI 数据手册

CY7C1351F

4-Mb (128K x 36) Flow-through SRAM with

NoBL™ Architecture

• Burst Capability—linear or interleaved burst order

• Low standby power

Features

• Can support up to 133-MHz bus operations with zero

Functional Description^[1]

wait states

— Data is transferred on every clock

The CY7C1351F is a 3.3V, 128K x 36 Synchronous

Flow-through Burst SRAM designed specifically to support

unlimited true back-to-back Read/Write operations without the

insertion of wait states. The CY7C1351F is equipped with the

advanced No Bus Latency™ (NoBL™) logic required to

enable consecutive Read/Write operations with data being

transferred on every clock cycle. This feature dramatically

improves the throughput of data through the SRAM, especially

in systems that require frequent Write-Read transitions.

• Pin compatible and functionally equivalent to ZBT™

devices

• Internally self-timed output buffer control to eliminate

the need to use OE

• Registered inputs for flow-through operation

• Byte Write capability

• 128K x 36 common I/O architecture

• 2.5V / 3.3V I/O power supply

• Fast clock-to-output times

— 6.5 ns (for 133-MHz device)

— 7.5 ns (for 117-MHz device)

All synchronous inputs pass through input registers controlled

by the rising edge of the clock. The clock input is qualified by

the Clock Enable (CEN) signal, which when deasserted

suspends operation and extends the previous clock cycle.

Maximum access delay from the clock rise is 6.5 ns (133-MHz

device).

— 8.0 ns (for 100-MHz device)

— 11.0 ns (for 66-MHz device)

Write operations are controlled by the four Byte Write Select

(BW_[A:D]) and a Write Enable (WE) input. All writes are

conducted with on-chip synchronous self-timed write circuitry.

Three synchronous Chip Enables (CE₁, CE₂, CE₃) and an

asynchronous Output Enable (OE) provide for easy bank

selection and output three-state control. In order to avoid bus

contention, the output drivers are synchronously three-stated

during the data portion of a write sequence.

• Clock Enable (CEN) pin to suspend operation

• Synchronous self-timed writes

• Asynchronous Output Enable

• JEDEC-standard 100 TQFP and 119 BGA packages

Logic Block Diagram

ADDRESS

A0, A1, A

A1'

A0'

MODE

BURST

LOGIC

ADV/LD

CLK

CEN

WRITE ADDRESS

ADV/LD

MEMORY

ARRAY

BWA

BWB

BWC

BWD

WRITE

DRIVERS

WRITE REGISTRY

AND DATA COHERENCY

CONTROL LOGIC

DQs

DQP

INPUT

READ LOGIC

CE1

CE2

CE3

SLEEP

Control

Note:

1. For best–practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.

Cypress Semiconductor Corporation

•

3901 North First Street

•

San Jose, CA 95134

•

408-943-2600

Document #: 38-05210 Rev. *B

Revised January 12, 2004

12 3 4 5 6 7...15

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与CY7C1351F-117BGI相关器件

型号	品牌	获取价格	描述	数据表
CY7C1351F-133AC	CYPRESS	获取价格	4-Mb (128K x 36) Flow-through SRAM with NoBL⑩
CY7C1351F-133AI	CYPRESS	获取价格	4-Mb (128K x 36) Flow-through SRAM with NoBL⑩
CY7C1351F-133BGC	CYPRESS	获取价格	4-Mb (128K x 36) Flow-through SRAM with NoBL⑩
CY7C1351F-133BGI	CYPRESS	获取价格	4-Mb (128K x 36) Flow-through SRAM with NoBL⑩
CY7C1351F-66AC	CYPRESS	获取价格	4-Mb (128K x 36) Flow-through SRAM with NoBL⑩
CY7C1351F-66AI	CYPRESS	获取价格	4-Mb (128K x 36) Flow-through SRAM with NoBL⑩
CY7C1351F-66BGC	CYPRESS	获取价格	4-Mb (128K x 36) Flow-through SRAM with NoBL⑩
CY7C1351F-66BGI	CYPRESS	获取价格	4-Mb (128K x 36) Flow-through SRAM with NoBL⑩
CY7C1351G	CYPRESS	获取价格	4-Mbit (128K x 36) Flow-through SRAM with NoB
CY7C1351G_12	CYPRESS	获取价格	4-Mbit (128 K Ã 36) Flow-Through SRAM with N

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