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CY7C1350B-150AC PDF预览

CY7C1350B-150AC

更新时间: 2024-11-25 05:09:35
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器
页数 文件大小 规格书
14页 200K
描述
128Kx36 Pipelined SRAM with NoBL Architecture

CY7C1350B-150AC 数据手册

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350B  
PRELIMINARY  
CY7C1350B  
128Kx36 Pipelined SRAM with NoBL™ Architecture  
Features  
Functional Description  
• Pin compatible and functionally equivalent to ZBT™  
devices IDT71V546, MT55L128L36P, and MCM63Z736  
• Supports 166-MHz bus operations with zero wait states  
— Data is transferred on every clock  
The CY7C1350B is a 3.3V, 128K by 36 synchronous-pipelined  
Burst SRAM designed specifically to support unlimited true  
back-to-back Read/Write operations without the insertion of  
wait states. The CY7C1350B is equipped with the advanced  
No Bus Latency(NoBL) logic required to enable consec-  
utive Read/Write operations with data being transferred on ev-  
ery clock cycle. This feature dramatically improves the  
throughput of the SRAM, especially in systems that require  
frequent Write/Read transitions. The CY7C1350B is pin/func-  
• Internally self-timed output buffer control to eliminate  
the need to use OE  
• Fully registered (inputs and outputs) for pipelined  
operation  
• Byte Write capability  
tionally  
compatible  
to  
ZBT  
SRAMs  
IDT71V546,  
MT55L128L36P, and MCM63Z736.  
• 128K x 36 common I/O architecture  
• Single 3.3V power supply  
• Fast clock-to-output times  
— 3.5 ns (for 166-MHz device)  
All synchronous inputs pass through input registers controlled  
by the rising edge of the clock. All data outputs pass through  
output registers controlled by the rising edge of the clock. The  
clock input is qualified by the Clock Enable (CEN) signal, which  
when deasserted suspends operation and extends the previ-  
ous clock cycle. Maximum access delay from the clock rise is  
3.5 ns (166-MHz device).  
— 3.8 ns (for 150-MHz device)  
— 4.0 ns (for 143-MHz device)  
— 4.2 ns (for 133-MHz device)  
— 5.0 ns (for 100-MHz device)  
Write operations are controlled by the four Byte Write Select  
(BWS[3:0]) and a Write Enable (WE) input. All writes are con-  
ducted with on-chip synchronous self-timed write circuitry.  
— 7.0 ns (for 80-MHz device)  
• Clock Enable (CEN) pin to suspend operation  
• Synchronous self-timed writes  
• Asynchronous output enable  
• JEDEC-standard 100 TQFP package  
• Burst Capability—linear or interleaved burst order  
• Low standby power (17.325 mW max.)  
Three synchronous Chip Enables (CE1, CE2, CE3) and an  
asynchronous Output Enable (OE) provide for easy bank se-  
lection and output three-state control. In order to avoid bus  
contention, the output drivers are synchronously three-stated  
during the data portion of a write sequence.  
Logic Block Diagram  
36  
D
CLK  
Data-In REG.  
CE  
Q
36  
ADV/LD  
17  
A
[16:0]  
CEN  
CE  
CONTROL  
and WRITE  
LOGIC  
36  
128Kx36  
1
CE  
MEMORY  
2
DQ  
[31:0]  
[3:0]  
CE  
ARRAY  
17  
3
36  
DP  
WE  
BWS  
[3:0]  
MODE  
OE  
.
Selection Guide  
-166  
3.5  
400  
5
-150  
-143  
4.0  
350  
5
-133  
4.2  
300  
5
-100  
-80  
7.0  
200  
5
Maximum Access Time (ns)  
3.8  
375  
5
5.0  
250  
5
Maximum Operating Current (mA)  
Commercial  
Commercial  
Maximum CMOS Standby Current (mA)  
Shaded areas contain advance information.  
NoBL and No Bus Latency are trademarks of Cypress Semiconductor Corporation.  
ZBT is a trademark of Integrated Device Technology.  
Cypress Semiconductor Corporation  
3901 North First Street  
San Jose  
CA 95134  
408-943-2600  
Document #: 38-05045 Rev. **  
Revised September 7, 2001  

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