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CY7C1336H-100AXC PDF预览

CY7C1336H-100AXC

更新时间: 2024-11-28 05:09:35
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 存储内存集成电路静态存储器时钟
页数 文件大小 规格书
15页 673K
描述
2-Mbit (64K x 32) Flow-Through Sync SRAM

CY7C1336H-100AXC 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:QFP
包装说明:14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, PLASTIC, MS-026, TQFP-100针数:100
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.84
Is Samacsys:N最长访问时间:8 ns
其他特性:FLOW-THROUGH ARCHITECTURE最大时钟频率 (fCLK):133 MHz
I/O 类型:COMMONJESD-30 代码:R-PQFP-G100
JESD-609代码:e4长度:20 mm
内存密度:2097152 bit内存集成电路类型:CACHE SRAM
内存宽度:32湿度敏感等级:3
功能数量:1端子数量:100
字数:65536 words字数代码:64000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:64KX32
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:LQFP封装等效代码:QFP100,.63X.87
封装形状:RECTANGULAR封装形式:FLATPACK, LOW PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:3.3 V认证状态:Not Qualified
座面最大高度:1.6 mm最大待机电流:0.04 A
最小待机电流:3.14 V子类别:SRAMs
最大压摆率:0.205 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3.135 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子节距:0.65 mm
端子位置:QUAD处于峰值回流温度下的最长时间:40
宽度:14 mmBase Number Matches:1

CY7C1336H-100AXC 数据手册

 浏览型号CY7C1336H-100AXC的Datasheet PDF文件第2页浏览型号CY7C1336H-100AXC的Datasheet PDF文件第3页浏览型号CY7C1336H-100AXC的Datasheet PDF文件第4页浏览型号CY7C1336H-100AXC的Datasheet PDF文件第5页浏览型号CY7C1336H-100AXC的Datasheet PDF文件第6页浏览型号CY7C1336H-100AXC的Datasheet PDF文件第7页 
CY7C1336H  
PRELIMINARY  
2-Mbit (64K x 32) Flow-Through Sync SRAM  
Features  
Functional Description[1]  
The CY7C1336H is a 64K x 32 synchronous cache RAM  
designed to interface with high-speed microprocessors with  
minimum glue logic. Maximum access delay from clock rise is  
6.5 ns (133-MHz version). A 2-bit on-chip counter captures the  
first address in a burst and increments the address automati-  
cally for the rest of the burst access. All synchronous inputs  
are gated by registers controlled by a positive-edge-triggered  
Clock Input (CLK). The synchronous inputs include all  
addresses, all data inputs, address-pipelining Chip Enable  
• 64K x 32 common I/O  
• 3.3V core power supply  
• 3.3V I/O supply  
• Fast clock-to-output times  
— 6.5 ns (133-MHz version)  
— 8.0 ns (100-MHz version)  
• Provide high-performance 2-1-1-1 access rate  
(CE1), depth-expansion Chip Enables (CE2 and CE3), Burst  
Control inputs (ADSC, ADSP, ADV), Write Enables  
and  
• User-selectable burst counter supporting Intel®  
(BW[A:D], and BWE), and Global Write (GW). Asynchronous  
inputs include the Output Enable (OE) and the ZZ pin.  
Pentium® interleaved or linear burst sequences  
• Separate processor and controller address strobes  
• Synchronous self-timed write  
The CY7C1336H allows either interleaved or linear burst  
sequences, selected by the MODE input pin. A HIGH selects  
an interleaved burst sequence, while a LOW selects a linear  
burst sequence. Burst accesses can be initiated with the  
Processor Address Strobe (ADSP) or the cache Controller  
Address Strobe (ADSC) inputs. Address advancement is  
controlled by the Address Advancement (ADV) input.  
• Asynchronous output enable  
• Supports 3.3V I/O level  
• Offered in JEDEC-standard lead-free 100-pin TQFP  
package  
Addresses and chip enables are registered at rising edge of  
clock when either Address Strobe Processor (ADSP) or  
Address Strobe Controller (ADSC) are active. Subsequent  
burst addresses can be internally generated as controlled by  
the Advance pin (ADV).  
• “ZZ” Sleep Mode option  
The CY7C1336H operates from a +3.3V core power supply  
while all outputs may operate with a +3.3V supply. All inputs  
and outputs are JEDEC-standard JESD8-5-compatible.  
Logic Block Diagram  
ADDRESS  
REGISTER  
A0, A1, A  
A[1:0]  
MODE  
ADV  
CLK  
Q1  
BURST  
COUNTER  
AND LOGIC  
Q0  
CLR  
ADSC  
ADSP  
DQ  
D
DQ  
BYTE  
WRITE REGISTER  
D
BYTE  
BW  
D
WRITE REGISTER  
DQ  
C
DQ  
C
BYTE  
BW  
C
BYTE  
WRITE REGISTER  
OUTPUT  
BUFFERS  
DQs  
WRITE REGISTER  
MEMORY  
ARRAY  
SENSE  
AMPS  
DQ  
B
DQ  
B
BYTE  
BW  
B
BYTE  
WRITE REGISTER  
WRITE REGISTER  
DQ  
A
BYTE  
DQ  
A
BW  
A
WRITE REGISTER  
BYTE  
BWE  
WRITE REGISTER  
INPUT  
REGISTERS  
GW  
ENABLE  
REGISTER  
CE1  
CE2  
CE3  
OE  
SLEEP  
CONTROL  
ZZ  
Note:  
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.  
Cypress Semiconductor Corporation  
Document #: 001-00210 Rev. *A  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised February 6, 2006  
[+] Feedback  

CY7C1336H-100AXC 替代型号

型号 品牌 替代类型 描述 数据表
IS64VF12832A-7.5TQLA3 ISSI

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128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM

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