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CY7C1327G-225AXI PDF预览

CY7C1327G-225AXI

更新时间: 2024-11-26 09:43:51
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 存储内存集成电路静态存储器时钟
页数 文件大小 规格书
18页 340K
描述
4-Mbit (256K x 18) Pipelined Sync SRAM

CY7C1327G-225AXI 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:QFP包装说明:LQFP, QFP100,.63X.87
针数:100Reach Compliance Code:compliant
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.76Is Samacsys:N
最长访问时间:2.6 ns其他特性:PIPELINED ARCHITECTURE
最大时钟频率 (fCLK):225 MHzI/O 类型:COMMON
JESD-30 代码:R-PQFP-G100JESD-609代码:e3
长度:20 mm内存密度:4718592 bit
内存集成电路类型:CACHE SRAM内存宽度:18
湿度敏感等级:3功能数量:1
端子数量:100字数:262144 words
字数代码:256000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:256KX18输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:LQFP
封装等效代码:QFP100,.63X.87封装形状:RECTANGULAR
封装形式:FLATPACK, LOW PROFILE并行/串行:PARALLEL
电源:2.5/3.3,3.3 V认证状态:Not Qualified
座面最大高度:1.6 mm最大待机电流:0.04 A
最小待机电流:3.14 V子类别:SRAMs
最大压摆率:0.29 mA最大供电电压 (Vsup):3.63 V
最小供电电压 (Vsup):3.135 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:0.65 mm
端子位置:QUAD宽度:14 mm
Base Number Matches:1

CY7C1327G-225AXI 数据手册

 浏览型号CY7C1327G-225AXI的Datasheet PDF文件第2页浏览型号CY7C1327G-225AXI的Datasheet PDF文件第3页浏览型号CY7C1327G-225AXI的Datasheet PDF文件第4页浏览型号CY7C1327G-225AXI的Datasheet PDF文件第5页浏览型号CY7C1327G-225AXI的Datasheet PDF文件第6页浏览型号CY7C1327G-225AXI的Datasheet PDF文件第7页 
CY7C1327G  
PRELIMINARY  
4-Mbit (256K x 18) Pipelined Sync SRAM  
Features  
Functional Description[1]  
• Registered inputs and outputs for pipelined operation  
• 256K ×18 common I/O architecture  
• 3.3V core power supply  
The CY7C1327G SRAM integrates 262,144 x 18 SRAM cells  
with advanced synchronous peripheral circuitry and a two-bit  
counter for internal burst operation. All synchronous inputs are  
gated by registers controlled by a positive-edge-triggered  
Clock Input (CLK). The synchronous inputs include all  
addresses, all data inputs, address-pipelining Chip Enable  
• 3.3V / 2.5V I/O operation  
• Fast clock-to-output times  
(
), depth-expansion Chip Enables (CE and  
), Burst  
CE3  
CE1  
2
— 2.6 ns (for 250-MHz device)  
Control inputs (  
(
inputs include the Output Enable ( ) and the ZZ pin.  
,
,
and  
ADSC ADSP  
), Write Enables  
). Asynchronous  
GW  
ADV  
), and Global Write (  
BWE  
, and  
BW[A:B]  
— 2.6 ns (for 225-MHz device)  
OE  
— 2.8 ns (for 200-MHz device)  
Addresses and chip enables are registered at rising edge of  
— 3.5 ns (for 166-MHz device)  
clock when either Address Strobe Processor (  
) or  
ADSP  
Address Strobe Controller (  
burst addresses can be internally generated as controlled by  
the Advance pin ( ).  
) are active. Subsequent  
ADSC  
— 4.0 ns (for 133-MHz device)  
— 4.5 ns (for 100-MHz device)  
ADV  
• Provide high-performance 3-1-1-1 access rate  
Address, data inputs, and write controls are registered on-chip  
to initiate a self-timed Write cycle.This part supports Byte Write  
operations (see Pin Descriptions and Truth Table for further  
details). Write cycles can be one to two bytes wide as  
• User-selectable burst counter supporting Intel®  
Pentium® interleaved or linear burst sequences  
• Separate processor and controller address strobes  
• Synchronous self-timed writes  
controlled by the byte write control inputs.  
when active  
GW  
causes all bytes to be written.  
LOW  
• Asynchronous output enable  
The CY7C1327G operates from a +3.3V core power supply  
while all outputs also operate with a +3.3V or a +2.5V supply.  
All inputs and outputs are JEDEC-standard JESD8-5-  
compatible.  
• Lead-Free 100-pin TQFP and 119 Ball BGA packages.  
• “ZZ” Sleep Mode Option  
Logic Block Diagram  
ADDRESS  
A0, A1, A  
REGISTER  
A[1:0]  
2
MODE  
Q1  
ADV  
CLK  
BURST  
COUNTER AND  
LOGIC  
CLR  
Q0  
ADSC  
ADSP  
DQB,DQP  
B
DQB,DQP  
WRITE REGISTER  
B
WRITE DRIVER  
OUTPUT  
BUFFERS  
BW  
B
A
DQs  
DQP  
DQP  
OUTPUT  
REGISTERS  
SENSE  
AMPS  
MEMORY  
ARRAY  
A
B
DQA,DQP  
A
E
DQA,DQP  
WRITE REGISTER  
A
WRITE DRIVER  
BW  
BWE  
GW  
INPUT  
REGISTERS  
ENABLE  
REGISTER  
CE1  
CE2  
PIPELINED  
ENABLE  
CE3  
OE  
ZZ  
SLEEP  
CONTROL  
1
Note:  
1. For best–practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com  
Cypress Semiconductor Corporation  
Document #: 38-05519 Rev. *A  
3901 North First Street  
San Jose, CA 95134  
408-943-2600  
Revised October 21, 2004  

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