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CY7C109B-15ZIT PDF预览

CY7C109B-15ZIT

更新时间： 2024-11-06 07:44:11
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器光电二极管
页数 文件大小 规格书
12页 221K
描述
Standard SRAM, 128KX8, 15ns, CMOS, PDSO32, 8 X 20 MM, TSOP1-32

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CY7C109B-15ZIT 数据手册

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009B  
CY7C109B  
CY7C1009B  
128K x 8 Static RAM  
put Enable (OE), and three-state drivers. Writing to the device  
is accomplished by taking Chip Enable One (CE1) and Write  
Enable (WE) inputs LOW and Chip Enable Two (CE2) input  
HIGH. Data on the eight I/O pins (I/O0 through I/O7) is then  
written into the location specified on the address pins (A0  
through A16).  
Features  
• High speed  
— tAA = 12 ns  
• Low active power  
— 495 mW (max. 12 ns)  
Reading from the device is accomplished by taking Chip En-  
able One (CE1) and Output Enable (OE) LOW while forcing  
Write Enable (WE) and Chip Enable Two (CE2) HIGH. Under  
these conditions, the contents of the memory location speci-  
fied by the address pins will appear on the I/O pins.  
• Low CMOS standby power  
— 55 mW (max.) 4 mW  
• 2.0V Data Retention  
• Automatic power-down when deselected  
• TTL-compatible inputs and outputs  
• Easy memory expansion with CE1, CE2, and OE options  
The eight input/output pins (I/O0 through I/O7) are placed in a  
high-impedance state when the device is deselected (CE1  
HIGH or CE2 LOW), the outputs are disabled (OE HIGH), or  
during a write operation (CE1 LOW, CE2 HIGH, and WE LOW).  
Functional Description[1]  
The CY7C109B is available in standard 400-mil-wide SOJ and  
32-pin TSOP type I packages. The CY7C1009B is available in  
300-mil-wide SOJ package. The CY7C1009B and  
CY7C109B are functionally equivalent in all other respects.  
The CY7C109B / CY7C1009B is a high-performance CMOS  
static RAM organized as 131,072 words by 8 bits. Easy mem-  
ory expansion is provided by an active LOW Chip Enable  
(CE1), an active HIGH Chip Enable (CE2), an active LOW Out-  
a
Logic Block Diagram  
Pin Configurations  
SOJ  
Top View  
V
NC  
32  
31  
30  
1
CC  
A
16  
A
15  
2
3
A
14  
CE  
2
A
4
12  
29  
28  
WE  
5
A
A
A
A
13  
A
8
A
7
27  
26  
6
6
5
7
9
25  
24  
23  
22  
21  
A
A
3
8
9
10  
11  
12  
13  
A
4
11  
OE  
I/O  
A
A
10  
2
0
A
1
CE  
I/O  
I/O  
INPUT BUFFER  
1
7
6
A
0
I/O  
I/O  
I/O  
I/O  
I/O  
0
1
2
20  
19  
1
A
0
A
1
I/O  
5
14  
15  
16  
I/O  
I/O  
18  
17  
4
3
2
A
2
GND  
109B–2  
A
3
4
A
A
A
A
A
WE  
CE  
A
1
2
32  
31  
OE  
11  
I/O  
I/O  
I/O  
3
4
5
512 x 256 x 8  
ARRAY  
A
A
9
8
10  
5
6
3
4
5
6
7
8
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
CE  
I/O  
A
13  
7
A
7
8
I/O  
I/O  
6
5
A
2
15  
I/O  
I/O  
TSOP I  
4
3
V
Top View  
CC  
NC  
A
A
A
A
A
6
A
A
9
GND  
(not to scale)  
I/O  
I/O  
10  
11  
12  
13  
14  
15  
16  
16  
2
6
7
POWER  
DOWN  
I/O  
1
COLUMN  
DECODER  
14  
12  
CE  
2
WE  
1
I/O  
0
CE  
A
0
7
I/O  
A
1
A
2
5
4
A
3
OE  
Selection Guide  
7C109B-12  
7C1009B-12  
7C109B-15  
7C1009B-15  
7C109B-20  
7C1009B-20  
7C109B-25  
7C1009B-25  
7C109B-35  
7C1009B-35  
Maximum Access Time (ns)  
Maximum Operating Current (mA)  
Maximum CMOS Standby Current (mA)  
Maximum CMOS Standby Current (mA)  
12  
90  
10  
15  
80  
10  
20  
75  
10  
25  
70  
10  
35  
60  
10  
Low Power Version  
Note:  
2
2
2
-
-
1. For guidelines on SRAM system design, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at www.cypress.com.  
Cypress Semiconductor Corporation  
•
3901 North First Street  
•
San Jose  
•
CA 95134  
•
408-943-2600  
Document #: 38-05038 Rev. *A  
Revised September 13, 2002  
1234567...12

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