CY7C109
CY7C1009
128K x 8 Static RAM
able (OE), and three-state drivers. Writing to the device is ac-
Features
complished by taking Chip Enable One (CE ) and Write En-
1
• High speed
able (WE) inputs LOW and Chip Enable Two (CE ) input HIGH.
2
Data on the eight I/O pins (I/O through I/O ) is then written
0
7
— t = 10 ns
AA
into the location specified on the address pins (A through
0
• Low active power
A
).
16
— 1017 mW (max., 12 ns)
Reading from the device is accomplished by taking Chip En-
• Low CMOS standby power
able One (CE ) and Output Enable (OE) LOW while forcing
1
Write Enable (WE) and Chip Enable Two (CE ) HIGH. Under
these conditions, the contents of the memory location speci-
fied by the address pins will appear on the I/O pins.
— 55 mW (max.), 4 mW (Low-power version)
• 2.0V Data Retention (Low-power version)
• Automatic power-down when deselected
• TTL-compatible inputs and outputs
2
The eight input/output pins (I/O through I/O ) are placed in a
0
7
high-impedance state when the device is deselected (CE
1
• Easy memory expansion with CE , CE , and OE options
1
2
HIGH or CE LOW), the outputs are disabled (OE HIGH), or
2
during a write operation (CE LOW, CE HIGH, and WE LOW).
1
2
Functional Description
The CY7C109 is available in standard 400-mil-wide SOJ and
32-pin TSOP type I packages. The CY7C1009 is available in
a 300-mil-wide SOJ package. The CY7C1009 and CY7C109
are functionally equivalent in all other respects.
The CY7C109 / CY7C1009 is a high-performance CMOS stat-
ic RAM organized as 131,072 words by 8 bits. Easy memory
expansion is provided by an active LOW Chip Enable (CE ),
1
an active HIGH Chip Enable (CE ), an active LOW Output En-
2
Logic Block Diagram
Pin Configurations
SOJ
Top View
V
NC
32
31
30
1
CC
A
16
A
14
A
12
A
15
2
3
4
CE
2
29
28
WE
5
A
A
A
A
7
13
27
26
A
6
6
8
A
5
7
9
25
24
23
22
21
A
A
3
8
9
10
11
12
13
4
A
11
OE
I/O
A
A
10
2
0
A
1
CE
INPUT BUFFER
1
I/O
7
A
0
I/O
I/O
I/O
0
I/O
1
I/O
2
I/O
6
20
19
1
2
A
0
I/O
5
14
15
16
A
1
I/O
I/O
4
18
17
A
2
GND
3
109–2
A
3
4
A
A
A
WE
CE
1
2
32
31
11
OE
I/O
I/O
I/O
3
4
5
512 x 256 x 8
ARRAY
A
A
A
9
10
5
6
3
4
5
6
7
8
A
8
30
29
28
27
26
25
24
23
22
21
20
19
18
17
CE
I/O
A
13
7
A
7
8
I/O
6
I/O
5
A
2
A
15
I/O
I/O
TSOP I
4
V
Top View
CC
3
NC
9
GND
(not to scale)
A
16
I/O
2
I/O
I/O
10
11
12
13
14
15
16
6
7
POWER
DOWN
I/O
1
COLUMN
DECODER
A
14
CE
2
1
CE
A
I/O
12
0
A
A
6
A
A
A
0
7
WE
A
1
A
2
5
109–1
A
3
OE
4
109–3
Selection Guide
7C109-10
7C109-12
7C109-15
7C109-20
7C109-25
7C109-35
7C1009-10 7C1009-12 7C1009-15 7C1009-20 7C1009-25 7C1009-35
Maximum Access Time (ns)
Maximum Operating Current (mA)
Maximum CMOS Standby Current (mA)
Maximum CMOS Standby Current (mA)
Low-Power Version
10
195
10
2
12
185
10
2
15
155
10
2
20
140
10
25
135
10
35
125
10
—
—
—
Shaded areas contain preliminary information.
Cypress Semiconductor Corporation
•
3901 North First Street
•
San Jose
•
CA 95134
•
408-943-2600
September 7, 1999