CY7C1041CV33
4-Mbit (256K x 16) Static RAM
Features
Functional Description[1]
• Pin equivalent to CY7C1041BV33
• Temperature Ranges
The CY7C1041CV33 is a high-performance CMOS Static
RAM organized as 262,144 words by 16 bits.
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. If Byte LOW Enable
(BLE) is LOW, then data from I/O pins (I/O0–I/O7), is written
into the location specified on the address pins (A0–A17). If Byte
HIGH Enable (BHE) is LOW, then data from I/O pins
(I/O8–I/O15) is written into the location specified on the
address pins (A0–A17).
— Commercial: 0°C to 70°C
— Industrial: –40°C to 85°C
— Automotive-A: –40°C to 85°C
— Automotive-E: –40°C to 125°C
• High speed
— tAA = 10 ns
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing the
Write Enable (WE) HIGH. If Byte LOW Enable (BLE) is LOW,
then data from the memory location specified by the address
pins will appear on I/O0 – I/O7. If Byte HIGH Enable (BHE) is
LOW, then data from memory will appear on I/O8 to I/O15. See
the truth table at the back of this data sheet for a complete
description of Read and Write modes.
• Low active power
— 324 mW (max.)
• 2.0V data retention
• Automatic power-down when deselected
• TTL-compatible inputs and outputs
• Easy memory expansion with CE and OE features
The input/output pins (I/O0–I/O15
)
are placed in
a
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), the BHE and BLE
are disabled (BHE, BLE HIGH), or during a Write operation
(CE LOW, and WE LOW).
• Available in Pb-free and non Pb-free 44-pin 400-mil-
SOJ, 44-pin TSOP II and 48-ball FBGA packages
The CY7C1041CV33 is available in a standard 44-pin
400-mil-wide body width SOJ and 44-pin TSOP II package
with center power and ground (revolutionary) pinout, as well
as a 48-ball fine-pitch ball grid array (FBGA) package.
Logic Block Diagram
Pin Configuration
SOJ/
TSOP II
Top View
INPUT BUFFER
44
43
42
41
40
39
38
1
2
3
4
5
6
A
A
17
0
A
A
16
A
0
1
A
A
15
A
1
2
A
2
A
OE
BHE
BLE
3
I/O –I/O
256K × 16
0
7
A
A
3
4
ARRAY
A
4
CE
I/O –I/O
A
I/O
I/O
5
7
8
15
0
15
A
6
37
36
35
34
33
32
I/O
I/O
8
I/O
I/O
1
2
14
13
12
A
7
9
A
8
10
11
12
13
I/O
V
SS
I/O
3
CC
V
SS
V
V
CC
I/O
I/O
I/O
4
5
6
7
11
10
COLUMN
DECODER
31
30
29
28
I/O
I/O
I/O
14
15
16
I/O
9
8
I/O
WE 17
NC
18
27
26
25
A
14
A
5
BHE
WE
CE
OE
BLE
19
A
A
6
13
A
20
21
22
A
7
12
A
11
A
24
23
8
9
A
A
10
Notes:
1. For guidelines on SRAM system design, please refer to the “System Design Guidelines” Cypress application note, available on the internet at www.cypress.com.
Cypress Semiconductor Corporation
Document #: 38-05134 Rev. *H
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised September 1, 2006
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