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CY7C1021BNV33L-12ZXCT PDF预览

CY7C1021BNV33L-12ZXCT

更新时间： 2024-11-26 13:07:11
品牌 Logo 应用领域
赛普拉斯 - CYPRESS /
页数 文件大小 规格书
10页 533K
描述
Standard SRAM, 64KX16, 12ns, CMOS, PDSO44, LEAD FREE, TSOP2-44

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CY7C1021BNV33L-12ZXCT 技术参数

生命周期：Obsolete零件包装代码：TSOP2
包装说明：TSOP2,针数：44
Reach Compliance Code：unknownECCN代码：3A991.B.2.B
HTS代码：8542.32.00.41风险等级：5.62
Is Samacsys：N最长访问时间：12 ns
JESD-30 代码：R-PDSO-G44JESD-609代码：e3
长度：18.415 mm内存密度：1048576 bit
内存集成电路类型：STANDARD SRAM内存宽度：16
功能数量：1端子数量：44
字数：65536 words字数代码：64000
工作模式：ASYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：64KX16
封装主体材料：PLASTIC/EPOXY封装代码：TSOP2
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE
并行/串行：PARALLEL认证状态：Not Qualified
座面最大高度：1.194 mm最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：3 V标称供电电压 (Vsup)：3.3 V
表面贴装：YES技术：CMOS
温度等级：COMMERCIAL端子面层：TIN
端子形式：GULL WING端子节距：0.8 mm
端子位置：DUAL宽度：10.16 mm
Base Number Matches：1

CY7C1021BNV33L-12ZXCT 数据手册

 浏览型号CY7C1021BNV33L-12ZXCT的Datasheet PDF文件第2页浏览型号CY7C1021BNV33L-12ZXCT的Datasheet PDF文件第3页浏览型号CY7C1021BNV33L-12ZXCT的Datasheet PDF文件第4页浏览型号CY7C1021BNV33L-12ZXCT的Datasheet PDF文件第5页浏览型号CY7C1021BNV33L-12ZXCT的Datasheet PDF文件第6页浏览型号CY7C1021BNV33L-12ZXCT的Datasheet PDF文件第7页 
CY7C1021BNV33  
64K x 16 Static RAM  
Features  
Functional Description[1]  
• 3.3V operation (3.0V–3.6V)  
The CY7C1021BNV is a high-performance CMOS static RAM  
organized as 65,536 words by 16 bits. This device has an  
automatic power-down feature that significantly reduces  
power consumption when deselected.  
• High speed  
— tAA = 10, 12, 15 ns  
• CMOS for optimum speed/power  
• Low Active Power (L version)  
— 576 mW (max.)  
Writing to the device is accomplished by taking Chip Enable  
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable  
(BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is  
written into the location specified on the address pins (A0  
through A15). If Byte High Enable (BHE) is LOW, then data  
from I/O pins (I/O9 through I/O16) is written into the location  
specified on the address pins (A0 through A15).  
• Low CMOS Standby Power (L version)  
— 1.80 mW (max.)  
• Automatic power-down when deselected  
• Independent control of upper and lower bits  
• Available in 44-pin TSOP II and 400-mil SOJ  
• Available in a 48-Ball Mini BGA package  
Reading from the device is accomplished by taking Chip  
Enable (CE) and Output Enable (OE) LOW while forcing the  
Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,  
then data from the memory location specified by the address  
pins will appear on I/O1 to I/O8. If Byte High Enable (BHE) is  
LOW, then data from memory will appear on I/O9 to I/O16. See  
the truth table at the back of this data sheet for a complete  
description of read and write modes.  
The input/output pins (I/O1 through I/O16) are placed in a  
high-impedance state when the device is deselected  
(CE HIGH), the outputs are disabled (OE HIGH), the BHE and  
BLE are disabled (BHE, BLE HIGH), or during a write  
operation (CE LOW, and WE LOW).  
The CY7C1021BNV is available in 400-mil-wide SOJ,  
standard 44-pin TSOP Type II, and 48-ball mini BGA  
packages.  
Logic Block Diagram  
Pin Configurations  
SOJ / TSOP II  
DATA IN DRIVERS  
Top View  
44  
1
A
A
5
4
43  
42  
41  
40  
39  
38  
A
A
6
2
3
4
5
6
3
A
A
2
7
A7  
A6  
OE  
A
1
BHE  
BLE  
I/O  
A
0
A5  
A4  
A3  
A2  
64K x 16  
CE  
I/O1–I/O8  
RAM Array  
512 X 2048  
I/O  
7
1
16  
37  
36  
35  
34  
33  
I/O  
I/O  
8
I/O  
I/O  
I/O  
2
3
15  
14  
13  
I/O9–I/O16  
9
A1  
A0  
10  
11  
12  
13  
I/O  
4
VSS  
VCC  
VSS  
VCC  
I/O  
I/O  
I/O  
I/O  
32  
I/O  
5
12  
11  
10  
9
31  
30  
29  
28  
I/O  
6
14  
15  
16  
I/O  
7
COLUMN DECODER  
I/O  
8
WE 17  
NC  
18  
27  
26  
25  
A
A
8
15  
BHE  
19  
A
A
14  
9
WE  
CE  
OE  
A
A
12  
NC  
20  
21  
22  
A
11  
NC  
13  
10  
A
24  
23  
BLE  
Note:  
1. For guidelines on SRAM system design, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at www.cypress.com  
Cypress Semiconductor Corporation  
Document #: 001-06433 Rev. **  
•
198 Champion Court  
•
San Jose, CA 95134-1709  
•
408-943-2600  
Revised February 1, 2006  
[+] Feedback  
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