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CY7C1019CV33-12ZIT PDF预览

CY7C1019CV33-12ZIT

更新时间: 2024-12-01 10:45:51
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器光电二极管
页数 文件大小 规格书
10页 520K
描述
Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, TSOP2-32

CY7C1019CV33-12ZIT 数据手册

 浏览型号CY7C1019CV33-12ZIT的Datasheet PDF文件第2页浏览型号CY7C1019CV33-12ZIT的Datasheet PDF文件第3页浏览型号CY7C1019CV33-12ZIT的Datasheet PDF文件第4页浏览型号CY7C1019CV33-12ZIT的Datasheet PDF文件第5页浏览型号CY7C1019CV33-12ZIT的Datasheet PDF文件第6页浏览型号CY7C1019CV33-12ZIT的Datasheet PDF文件第7页 
CY7C1019CV33  
128K x 8 Static RAM  
expansion is provided by an active LOW Chip Enable (CE), an  
active LOW Output Enable (OE), and three-state drivers. This  
device has an automatic power-down feature that significantly  
reduces power consumption when deselected.  
Features  
• Pin and function compatible with CY7C1019BV33  
• High speed  
Writing to the device is accomplished by taking Chip Enable  
(CE) and Write Enable (WE) inputs LOW. Data on the eight I/O  
pins (I/O0 through I/O7) is then written into the location  
specified on the address pins (A0 through A16).  
— tAA = 8, 10, 12, 15 ns  
• CMOS for optimum speed/power  
• Data retention at 2.0V  
Reading from the device is accomplished by taking Chip  
Enable (CE) and Output Enable (OE) LOW while forcing Write  
Enable (WE) HIGH. Under these conditions, the contents of  
the memory location specified by the address pins will appear  
on the I/O pins.  
• Center power/ground pinout  
• Automatic power-down when deselected  
• Easy memory expansion with CE and OE options  
• Available in 48-ball VFBGA, 32-pin TSOP II and 400-mil  
SOJ package  
The eight input/output pins (I/O0 through I/O7) are placed in a  
high-impedance state when the device is deselected (CE  
HIGH), the outputs are disabled (OE HIGH), or during a write  
operation (CE LOW, and WE LOW).  
• Also available in lead-free 48-ball VFBGA and 32-pin  
TSOP II packages  
Functional Description  
The CY7C1019CV33 is available in Standard 48-ball FBGA,  
32-pin TSOP II and 400-mil-wide SOJ packages.  
The CY7C1019CV33 is a high-performance CMOS static  
RAM organized as 131,072 words by 8 bits. Easy memory  
Logic Block Diagram  
Pin Configuration  
SOJ/TSOP II  
Top View  
A
A
1
A
A
32  
1
0
16  
31  
30  
2
3
4
5
6
15  
A
A
14  
A
13  
2
I/O  
A
3
29  
28  
0
INPUT BUFFER  
CE  
OE  
I/O  
I/O  
I/O  
27  
26  
1
I/O  
A
0
0
1
7
A
A
2
1
I/O  
V
7
8
9
10  
11  
12  
13  
6
I/O  
2
25  
24  
23  
22  
21  
V
CC  
SS  
A
3
V
A
I/O  
V
CC  
I/O  
4
SS  
3
512 x 256 x 8  
ARRAY  
A
5
I/O  
I/O  
2
3
5
4
A
6
I/O  
I/O  
A
4
A
7
A
8
WE  
A
4
12  
I/O  
A
11  
5
20  
19  
A
5
A
10  
14  
15  
16  
I/O  
6
POWER  
DOWN  
A
6
A
9
A
8
COLUMN  
DECODER  
18  
17  
CE  
A
7
I/O  
WE  
7
OE  
Cypress Semiconductor Corporation  
Document #: 38-05130 Rev. *E  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised January 9, 2006  

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