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CY7C1019B-15ZI PDF预览

CY7C1019B-15ZI

更新时间: 2024-11-06 22:09:23
品牌 Logo 应用领域
赛普拉斯 - CYPRESS /
页数 文件大小 规格书
9页 197K
描述
128K x 8 Static RAM

CY7C1019B-15ZI 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TSOP2
包装说明:TSOP2-32针数:32
Reach Compliance Code:compliantECCN代码:3A991.B.2.B
HTS代码:8542.32.00.41风险等级:5.34
最长访问时间:15 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-G32JESD-609代码:e0
长度:20.95 mm内存密度:1048576 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
湿度敏感等级:3功能数量:1
端子数量:32字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:128KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2
封装等效代码:TSOP32,.46封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):235电源:5 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大待机电流:0.0003 A最小待机电流:2 V
子类别:SRAMs最大压摆率:0.13 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:10.16 mm
Base Number Matches:1

CY7C1019B-15ZI 数据手册

 浏览型号CY7C1019B-15ZI的Datasheet PDF文件第2页浏览型号CY7C1019B-15ZI的Datasheet PDF文件第3页浏览型号CY7C1019B-15ZI的Datasheet PDF文件第4页浏览型号CY7C1019B-15ZI的Datasheet PDF文件第5页浏览型号CY7C1019B-15ZI的Datasheet PDF文件第6页浏览型号CY7C1019B-15ZI的Datasheet PDF文件第7页 
C1019V33  
CY7C1019B/  
CY7C10191B  
128K x 8 Static RAM  
Writing to the device is accomplished by taking Chip Enable  
(CE) and Write Enable (WE) inputs LOW. Data on the eight I/O  
pins (I/O0 through I/O7) is then written into the location speci-  
fied on the address pins (A0 through A16).  
Features  
• High speed  
— tAA = 10, 12, 15 ns  
Reading from the device is accomplished by taking Chip  
Enable (CE) and Output Enable (OE) LOW while forcing Write  
Enable (WE) HIGH. Under these conditions, the contents of  
the memory location specified by the address pins will appear  
on the I/O pins.  
• CMOS for optimum speed/power  
• Center power/ground pinout  
• Automatic power-down when deselected  
• Easy memory expansion with CE and OE options  
• Functionally equivalent to CY7C1019  
The eight input/output pins (I/O0 through I/O7) are placed in a  
high-impedance state when the device is deselected (CE  
HIGH), the outputs are disabled (OE HIGH), or during a write  
operation (CE LOW, and WE LOW).  
Functional Description  
The CY7C1019B/10191B is a high-performance CMOS static  
RAM organized as 131,072 words by 8 bits. Easy memory  
expansion is provided by an active LOW Chip Enable (CE), an  
active LOW Output Enable (OE), and three-state drivers. This  
device has an automatic power-down feature that significantly  
reduces power consumption when deselected.  
The CY7C1019B/10191B is available in standard 32-pin  
TSOP Type II and 400-mil-wide SOJ packages. Customers  
should use part number CY7C10191B when ordering parts  
with 10 ns tAA, and CY7C1019B when ordering 12 and 15 ns  
tAA  
.
ogic Block Diagram  
Pin Configurations  
/ TSOPII  
SOJ  
Top View  
A
A
1
A
16  
32  
31  
30  
1
0
A
15  
2
3
4
5
6
A
2
A
14  
A
A
13  
29  
28  
3
I/O  
0
INPUT BUFFER  
CE  
I/O  
OE  
I/O  
27  
26  
I/O  
I/O  
1
2
0
7
A
0
I/O  
I/O  
6
7
1
A
1
25  
24  
23  
22  
21  
V
V
A
8
9
10  
11  
12  
13  
V
V
CC  
I/O  
I/O  
4
CC  
2
SS  
A
3
4
SS  
A
I/O  
3
I/O  
4
I/O  
5
512 x 256 x 8  
ARRAY  
I/O  
2
I/O  
5
A
5
6
A
3
A
A
7
8
WE  
A
12  
A
A
11  
4
20  
19  
A
A
10  
5
14  
15  
16  
A
A
I/O  
6
18  
17  
9
6
7
POWER  
DOWN  
COLUMN  
DECODER  
A
8
A
CE  
7
I/O  
WE  
OE  
Cypress Semiconductor Corporation  
3901 North First Street  
San Jose  
CA 95134  
408-943-2600  
Document #: 38-05026 Rev. *A  
Revised August 13, 2002  

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