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CY7C1019B-12ZCT PDF预览

CY7C1019B-12ZCT

更新时间: 2024-09-17 19:29:55
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
8页 408K
描述
Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, TSOP2-32

CY7C1019B-12ZCT 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP2包装说明:TSOP2,
针数:32Reach Compliance Code:unknown
ECCN代码:3A991.B.2.BHTS代码:8542.32.00.41
风险等级:5.34最长访问时间:12 ns
JESD-30 代码:R-PDSO-G32JESD-609代码:e0
长度:20.95 mm内存密度:1048576 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
湿度敏感等级:3功能数量:1
端子数量:32字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:128KX8封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):235认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:TIN LEAD
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:10.16 mmBase Number Matches:1

CY7C1019B-12ZCT 数据手册

 浏览型号CY7C1019B-12ZCT的Datasheet PDF文件第2页浏览型号CY7C1019B-12ZCT的Datasheet PDF文件第3页浏览型号CY7C1019B-12ZCT的Datasheet PDF文件第4页浏览型号CY7C1019B-12ZCT的Datasheet PDF文件第5页浏览型号CY7C1019B-12ZCT的Datasheet PDF文件第6页浏览型号CY7C1019B-12ZCT的Datasheet PDF文件第7页 
CY7C1019B  
CY7C10191B  
128K x 8 Static RAM  
Writing to the device is accomplished by taking Chip Enable  
(CE) and Write Enable (WE) inputs LOW. Data on the eight  
I/O pins (I/O0 through I/O7) is then written into the location  
specified on the address pins (A0 through A16).  
Features  
• High speed  
— tAA = 10, 12, 15 ns  
Reading from the device is accomplished by taking Chip  
Enable (CE) and Output Enable (OE) LOW while forcing Write  
Enable (WE) HIGH. Under these conditions, the contents of  
the memory location specified by the address pins will appear  
on the I/O pins.  
• CMOS for optimum speed/power  
• Center power/ground pinout  
• Automatic power-down when deselected  
• Easy memory expansion with CE and OE options  
• Functionally equivalent to CY7C1019  
The eight input/output pins (I/O0 through I/O7) are placed in a  
high-impedance state when the device is deselected (CE  
HIGH), the outputs are disabled (OE HIGH), or during a write  
operation (CE LOW, and WE LOW).  
Functional Description  
The CY7C1019B/10191B is a high-performance CMOS static  
RAM organized as 131,072 words by 8 bits. Easy memory  
expansion is provided by an active LOW Chip Enable (CE), an  
active LOW Output Enable (OE), and three-state drivers. This  
device has an automatic power-down feature that significantly  
reduces power consumption when deselected.  
The CY7C1019B/10191B is available in standard 32-pin  
TSOP Type II and 400-mil-wide SOJ packages. Customers  
should use part number CY7C10191B when ordering parts  
with 10 ns tAA, and CY7C1019B when ordering 12 and 15 ns  
tAA  
.
Logic Block Diagram  
Pin Configurations  
/ TSOPII  
SOJ  
Top View  
A
A
1
A
A
32  
1
0
16  
31  
30  
2
3
4
5
6
15  
A
A
14  
A
13  
2
A
29  
28  
3
I/O0  
INPUT BUFFER  
CE  
OE  
I/O  
I/O  
27  
26  
I/O  
I/O1  
I/O2  
0
1
7
A
0
I/O  
V
7
8
9
10  
11  
12  
13  
6
A
1
25  
24  
23  
22  
21  
A
2
V
CC  
SS  
A
V
3
V
CC  
I/O  
SS  
A
I/O3  
I/O4  
I/O5  
I/O6  
4
512 x 256 x 8  
ARRAY  
I/O  
I/O  
2
3
5
4
A
5
A
I/O  
A
6
A
7
WE  
A
4
12  
A
8
A
11  
20  
19  
A
5
A
10  
14  
15  
16  
A
6
A
9
A
8
18  
17  
POWER  
DOWN  
COLUMN  
DECODER  
A
7
CE  
I/O7  
WE  
OE  
Cypress Semiconductor Corporation  
Document #: 38-05026 Rev. *B  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised October 6, 2005  

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