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CY7C1007D-10VXIT PDF预览

CY7C1007D-10VXIT

更新时间: 2024-11-09 13:07:11
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
10页 855K
描述
Standard SRAM, 1MX1, 10ns, CMOS, PDSO28, 0.300 INCH, LEAD FREE, MO-088, SOJ-28

CY7C1007D-10VXIT 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete包装说明:SOJ, SOJ28,.34
Reach Compliance Code:compliantECCN代码:3A991.B.2.B
HTS代码:8542.32.00.41风险等级:5.71
Is Samacsys:N最长访问时间:10 ns
I/O 类型:SEPARATEJESD-30 代码:R-PDSO-J28
JESD-609代码:e4长度:17.907 mm
内存密度:1048576 bit内存集成电路类型:STANDARD SRAM
内存宽度:1湿度敏感等级:3
功能数量:1端子数量:28
字数:1048576 words字数代码:1000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:1MX1
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:SOJ封装等效代码:SOJ28,.34
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:5 V认证状态:Not Qualified
座面最大高度:3.556 mm最大待机电流:0.003 A
最小待机电流:2 V子类别:SRAMs
最大压摆率:0.08 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:J BEND端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:7.5057 mmBase Number Matches:1

CY7C1007D-10VXIT 数据手册

 浏览型号CY7C1007D-10VXIT的Datasheet PDF文件第2页浏览型号CY7C1007D-10VXIT的Datasheet PDF文件第3页浏览型号CY7C1007D-10VXIT的Datasheet PDF文件第4页浏览型号CY7C1007D-10VXIT的Datasheet PDF文件第5页浏览型号CY7C1007D-10VXIT的Datasheet PDF文件第6页浏览型号CY7C1007D-10VXIT的Datasheet PDF文件第7页 
CY7C107D  
CY7C1007D  
1-Mbit (1M x 1) Static RAM  
Features  
Functional Description [1]  
• Pin- and function-compatible with CY7C107B/CY7C1007B  
• High speed  
The CY7C107D and CY7C1007D are high-performance  
CMOS static RAMs organized as 1,048,576 words by 1 bit.  
Easy memory expansion is provided by an active LOW Chip  
Enable (CE) and tri-state drivers. These devices have an  
automatic power-down feature that reduces power  
consumption by more than 65% when deselected. The output  
pin (DOUT) is placed in a high-impedance state when:  
— tAA = 10 ns  
• Low Active Power  
— ICC = 80 mA @ 10 ns  
• Low CMOS Standby Power  
— ISB2 = 3 mA  
• Deselected (CE HIGH)  
• When the write operation is active (CE and WE LOW)  
• 2.0V Data Retention  
Write to the device by taking Chip Enable (CE) and Write  
Enable (WE) inputs LOW. Data on the input pin (DIN) is written  
into the memory location specified on the address pins (A0  
through A19).  
• Automatic power-down when deselected  
• CMOS for optimum speed/power  
• TTL-compatible inputs and outputs  
• CY7C107DavailableinPb-free28-pin400-MilwideMolded  
SOJ package. CY7C1007D available in Pb-free 28-pin  
300-Mil wide Molded SOJ package  
Read from the device by taking Chip Enable (CE) LOW while  
while forcing Write Enable (WE) HIGH. Under these condi-  
tions, the contents of the memory location specified by the  
address pins appears on the data output (DOUT) pin.  
Logic Block Diagram  
D
A
A
A
A
A
A
A
A
INPUT BUFFER  
IN  
0
1
2
3
4
5
6
7
1M x 1  
D
OUT  
ARRAY  
A
8
CE  
POWER  
DOWN  
COLUMN DECODER  
WE  
Note  
1. For guidelines on SRAM system design, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at www.cypress.com.  
Cypress Semiconductor Corporation  
Document #: 38-05469 Rev. *E  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised February 22, 2007  

CY7C1007D-10VXIT 替代型号

型号 品牌 替代类型 描述 数据表
CY7C106D-10VXIT CYPRESS

完全替代

暂无描述

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