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CY7C0831V-167AXC PDF预览

CY7C0831V-167AXC

更新时间: 2024-09-19 07:52:43
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器内存集成电路
页数 文件大小 规格书
32页 895K
描述
Dual-Port SRAM, 128KX18, 4ns, CMOS, PQFP120, 14 X 14 MM, 1.40 MM HEIGHT, LEAD FREE, TQFP-120

CY7C0831V-167AXC 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:QFP包装说明:14 X 14 MM, 1.40 MM HEIGHT, LEAD FREE, TQFP-120
针数:120Reach Compliance Code:compliant
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.64最长访问时间:4 ns
其他特性:PIPELINED ARCHITECTUREJESD-30 代码:S-PQFP-G120
长度:14 mm内存密度:2359296 bit
内存集成电路类型:DUAL-PORT SRAM内存宽度:18
功能数量:1端子数量:120
字数:131072 words字数代码:128000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:128KX18
封装主体材料:PLASTIC/EPOXY封装代码:LFQFP
封装形状:SQUARE封装形式:FLATPACK, LOW PROFILE, FINE PITCH
并行/串行:PARALLEL认证状态:Not Qualified
座面最大高度:1.6 mm最大供电电压 (Vsup):3.465 V
最小供电电压 (Vsup):3.135 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:GULL WING
端子节距:0.4 mm端子位置:QUAD
宽度:14 mmBase Number Matches:1

CY7C0831V-167AXC 数据手册

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CY7C093794V CY7C093894V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3.3V 64K/128K  
Synchronous Dual-Port RAM  
x 36 and 128K/256K x 18  
CY7C0851V/CY7C0852V  
CY7C0831V/CY7C0832V  
3.3V 64K/128K x 36 and 128K/256K x 18  
Synchronous Dual-Port RAM  
Functional Description  
Features  
• True dual-ported memory cells that allow simultaneous  
access of the same memory location  
• Synchronous pipelined operation  
• Organization of 2M and 4.5M devices  
— 128K × 36 (CY7C0852V)  
The CY7C0851V/CY7C0852V/CY7C0831VCY7C0832V are  
2M and 4.5M pipelined, synchronous, true dual-port static  
RAMs that are high-speed, low-power 3.3V CMOS. Two ports  
are provided, permitting independent, simultaneous access for  
Reads from any location in memory. The result of writing to the  
same location by more than one port at the same time is  
undefined. Registers on control, address, and data lines allow  
for minimal set-up and hold time.  
— 64K × 36 (CY7C0851V)  
— 256K × 18 (CY7C0832V)  
During a Read operation, data is registered for decreased  
cycle time. Clock to data valid tCD2 = 4.0 ns at 167 MHz. Each  
port contains a burst counter on the input address register.  
After externally loading the counter with the initial address, the  
counter will increment the address internally (more details to  
follow). The internal Write pulse width is independent of the  
duration of the R/W input signal. The internal Write pulse is  
self-timed to allow the shortest possible cycle times.  
— 128K × 18 (CY7C0831V)  
• Pipelined output mode allows fast 167-MHz operation  
• 0.18-micron CMOS for optimum speed and power  
• High-speed clock to data access: 4.0 ns (max.)  
• 3.3V low operating power  
Active = 225 mA (typical)  
— Standby = 55 mA (typical)  
A HIGH on CE0 or LOW on CE1 for one clock cycle will power  
down the internal circuitry to reduce the static power  
consumption. One cycle with chip enables asserted is required  
to reactivate the outputs.  
• Interrupt flags for message passing  
• Global master reset  
• Separate byte enables on both ports  
• Commercial and industrial temperature ranges  
• IEEE 1149.1-compatible JTAG boundary scan  
• 172-ball BGA (1 mm pitch) (15 mm × 15 mm)  
• 120-pin TQFP (14 mm × 14 mm × 1.4 mm)  
• 176-pin TQFP (24 mm × 24 mm × 1.4 mm)  
• FLEx36devices are footprint upgradeable from 2M to  
4M to 9M  
• Counter wrap around control  
Counter enable (CNTEN) inputs are provided to stall the  
operation of the address input and utilize the internal address  
generated by the internal counter for fast, interleaved memory  
applications. A port’s burst counter is loaded when the port’s  
address strobe (ADS) and CNTEN signals are LOW. When the  
port’s CNTEN is asserted and the ADS is deasserted, the  
address counter will increment on each LOW to HIGH  
transition of that port’s clock signal. This will Read/Write one  
word from/into each successive address location until CNTEN  
is deasserted. The counter can address the entire memory  
array, and will loop back to the start. Counter reset (CNTRST)  
is used to reset the unmasked portion of the burst counter to  
0s. A counter-mask register is used to control the counter  
wrap. The counter and mask register operations are described  
in more detail in the following sections.  
— Internal mask register controls counter wrap-around  
— Counter-interrupt flags to indicate wrap-around  
— Memory block retransmit operation  
• Counter readback on address lines  
• Mask register readback on address lines  
• Dual Chip Enables on both ports for easy depth  
expansion  
New features added to the CY7C0851V/CY7C0852V/  
CY7C0831V/CY7C0832V devices include: readback of  
burst-counter internal address value on address lines,  
counter-mask registers to control the counter wrap-around,  
counter interrupt (CNTINT) flags, readback of mask register  
value on address lines, retransmit functionality, interrupt flags  
for message passing, JTAG for boundary scan, and  
asynchronous Master Reset (MRST).  
Cypress offers an upgrade to a 9M synchronous Dual Port with  
a compatible footprint. Please see the application note  
Upgrading the 4-Meg (CY7C0852) Dual-Port to a 9-Meg  
(CY7C0853) Dual-Port for more details.  
Cypress Semiconductor Corporation  
Document #: 38-06059 Rev. *I  
3901 North First Street  
San Jose, CA 95134  
408-943-2600  
Revised June 03, 2004  

CY7C0831V-167AXC 替代型号

型号 品牌 替代类型 描述 数据表
CY7C0831AV-133AXI CYPRESS

功能相似

FLEx18 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM
CY7C0831AV-167AC CYPRESS

功能相似

FLEx18⑩ 3.3V 64K/128K x 36 and 128K/256K x 18

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CY7C0832AV-133BBC ROCHESTER

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