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CY7C0831AV-133BBI PDF预览

CY7C0831AV-133BBI

更新时间： 2024-11-07 04:53:31
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 存储内存集成电路静态存储器时钟
页数 文件大小 规格书
28页 821K
描述
FLEx18⑩ 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM

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CY7C0831AV-133BBI 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：BGA包装说明：13 X 13 MM, 1.60 MM HEIGHT, 1 MM PITCH, FBGA-144
针数：144Reach Compliance Code：not_compliant
ECCN代码：3A991.B.2.AHTS代码：8542.32.00.41
风险等级：5.6Is Samacsys：N
最长访问时间：4 ns其他特性：PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)：133 MHzI/O 类型：COMMON
JESD-30 代码：S-PBGA-B144JESD-609代码：e0
长度：13 mm内存密度：2359296 bit
内存集成电路类型：DUAL-PORT SRAM内存宽度：18
湿度敏感等级：3功能数量：1
端口数量：2端子数量：144
字数：131072 words字数代码：128000
工作模式：SYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：128KX18
输出特性：3-STATE封装主体材料：PLASTIC/EPOXY
封装代码：LBGA封装等效代码：BGA144,12X12,20
封装形状：SQUARE封装形式：GRID ARRAY, LOW PROFILE
并行/串行：PARALLEL峰值回流温度（摄氏度）：240
电源：3.3 V认证状态：Not Qualified
座面最大高度：1.6 mm最大待机电流：0.075 A
最小待机电流：3.14 V子类别：SRAMs
最大压摆率：0.3 mA最大供电电压 (Vsup)：3.465 V
最小供电电压 (Vsup)：3.135 V标称供电电压 (Vsup)：3.3 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：TIN LEAD
端子形式：BALL端子节距：1 mm
端子位置：BOTTOM处于峰值回流温度下的最长时间：30
宽度：13 mmBase Number Matches：1

CY7C0831AV-133BBI 数据手册

 浏览型号CY7C0831AV-133BBI的Datasheet PDF文件第2页浏览型号CY7C0831AV-133BBI的Datasheet PDF文件第3页浏览型号CY7C0831AV-133BBI的Datasheet PDF文件第4页浏览型号CY7C0831AV-133BBI的Datasheet PDF文件第5页浏览型号CY7C0831AV-133BBI的Datasheet PDF文件第6页浏览型号CY7C0831AV-133BBI的Datasheet PDF文件第7页 
CY7C093794V CY7C093894V CY7C09289V CY7C09369V CY7C09379V CY7C09389VFLEx18™ 3.3V 64K/128K  
x 36 and 128K/256K x 18  
Synchronous Dual-Port RAM  
CY7C0837AV  
CY7C0830AV/CY7C0831AV  
CY7C0832AV/CY7C0833AV  
FLEx18™3.3V64K/128Kx36and128K/256Kx18  
Synchronous Dual-Port RAM  
Functional Description  
Features  
• True dual-ported memory cells that allow simultaneous  
The FLEx18™ family includes 512-Kbit, 1-Mbit, 2-Mbit, 4-Mbit  
and 9-Mbit pipelined, synchronous, true dual-port static RAMs  
that are high-speed, low-power 3.3V CMOS. Two ports are  
provided, permitting independent, simultaneous access to any  
location in memory. The result of writing to the same location  
by more than one port at the same time is undefined. Registers  
on control, address, and data lines allow for minimal set-up  
and hold time.  
During a Read operation, data is registered for decreased  
cycle time. Each port contains a burst counter on the input  
address register. After externally loading the counter with the  
initial address, the counter will increment the address inter-  
nally (more details to follow). The internal Write pulse width is  
independent of the duration of the R/W input signal. The  
internal Write pulse is self-timed to allow the shortest possible  
cycle times.  
A HIGH on CE0 or LOW on CE1 for one clock cycle will power  
down the internal circuitry to reduce the static power  
consumption. One cycle with chip enables asserted is required  
to reactivate the outputs.  
Additional features include: readback of burst-counter internal  
address value on address lines, counter-mask registers to  
control the counter wrap-around, counter interrupt (CNTINT)  
flags, readback of mask register value on address lines,  
retransmit functionality, interrupt flags for message passing,  
JTAG for boundary scan, and asynchronous Master Reset  
(MRST).  
access of the same memory location  
• Synchronous pipelined operation  
• Family of 512-Kbit, 1-Mbit, 2-Mbit, 4-Mbit and 9-Mbit  
devices  
• Pipelined output mode allows fast operation  
• 0.18-micron CMOS for optimum speed and power  
• High-speed clock to data access  
• 3.3V low power  
— Active as low as 225 mA (typ)  
— Standby as low as 55 mA (typ)  
• Mailbox function for message passing  
• Global master reset  
• Separate byte enables on both ports  
• Commercial and industrial temperature ranges  
• IEEE 1149.1-compatible JTAG boundary scan  
• 144-ball FBGA (13 mm × 13 mm) (1.0 mm pitch)  
• 120TQFP (14 mm x 14 mm x 1.4 mm)  
• Lead(Pb)-free packages available  
• Counter wrap around control  
— Internal mask register controls counter wrap-around  
— Counter-interrupt flags to indicate wrap-around  
— Memory block retransmit operation  
• Counter readback on address lines  
• Mask register readback on address lines  
The CY7C0833AV device in this family has limited features.  
Please see Address Counter and Mask Register  
Operations[15] on page 6 for details.  
• Dual Chip Enables on both ports for easy depth  
expansion  
Table 1. Product Selection Guide  
Density  
512-Kbit  
1-Mbit  
2-Mbit  
4-Mbit  
9-Mbit  
(32K x 18)  
(64K x 18)  
(128K x 18)  
(256K x 18)  
(512K x 18)  
Part Number  
CY7C0837AV CY7C0830AV CY7C0831AV CY7C0832AV CY7C0833AV  
Max. Speed (MHz)  
167  
4.0  
225  
167  
4.0  
225  
167  
4.0  
225  
167  
4.0  
225  
133  
4.7  
270  
Max. Access Time - clock to Data (ns)  
Typical operating current (mA)  
Package  
144 FBGA  
120 TQFP  
120 TQFP  
120 TQFP  
144 FBGA  
144 FBGA  
144 FBGA  
144 FBGA  
Cypress Semiconductor Corporation  
•
198 Champion Court  
•
San Jose, CA 95134-1709  
•
408-943-2600  
Document #: 38-06059 Rev. *Q  
Revised May 10, 2006  
[+] Feedback  
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与CY7C0831AV-133BBI相关器件

型号 品牌 获取价格 描述 数据表
CY7C0831AV-133BBXC CYPRESS

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 		FLEx18⑩ 3.3V 64K/128K x 36 and 128K/256K x 18
CY7C0831AV-133BBXI CYPRESS

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 		FLEx18⑩ 3.3V 64K/128K x 36 and 128K/256K x 18
CY7C0831AV-167AC CYPRESS

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 		FLEx18⑩ 3.3V 64K/128K x 36 and 128K/256K x 18
CY7C0831AV-167AI CYPRESS

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 		Dual-Port SRAM, 128KX18, 4ns, CMOS, PQFP120, 14 X 14 MM, 1.40 MM HEIGHT, TQFP-120
CY7C0831AV-167AXC CYPRESS

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 		FLEx18 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM
CY7C0831AV-167AXC ROCHESTER

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 		128KX18 DUAL-PORT SRAM, 4ns, PQFP120, 14 X 14 MM, 1.40 MM HEIGHT, LEAD FREE, TQFP-120
CY7C0831AV-167BBC CYPRESS

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 		FLEx18⑩ 3.3V 64K/128K x 36 and 128K/256K x 18
CY7C0831AV-167BBC ROCHESTER

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 		128KX18 DUAL-PORT SRAM, 4ns, PBGA144, 13 X 13 MM, 1.60 MM HEIGHT, 1 MM PITCH, FBGA-144
CY7C0831AV-167BBI CYPRESS

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 		Dual-Port SRAM, 128KX18, 4ns, CMOS, PBGA144, 13 X 13 MM, 1.60 MM HEIGHT, 1 MM PITCH, FBGA-
CY7C0831V CYPRESS

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 		FLEx18-TM 3.3V 32K/64K/128K/256K/512K x 18 Synchronous Dual-Port RAM

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