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CY7C024E-15AXCT PDF预览

CY7C024E-15AXCT

更新时间: 2024-09-18 15:30:15
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器内存集成电路
页数 文件大小 规格书
24页 251K
描述
Multi-Port SRAM, 4KX16, 15ns, CMOS, PQFP100, ROHS COMPLIANT, PLASTIC, MS-026, TQFP-100

CY7C024E-15AXCT 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:ROHS COMPLIANT, PLASTIC, MS-026, TQFP-100
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.84
最长访问时间:15 nsI/O 类型:COMMON
JESD-30 代码:S-PQFP-G100JESD-609代码:e4
长度:14 mm内存密度:65536 bit
内存集成电路类型:MULTI-PORT SRAM内存宽度:16
湿度敏感等级:3功能数量:1
端口数量:2端子数量:100
字数:4096 words字数代码:4000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:4KX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:LFQFP封装等效代码:QFP100,.63SQ,20
封装形状:SQUARE封装形式:FLATPACK, LOW PROFILE, FINE PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:5 V认证状态:Not Qualified
座面最大高度:1.6 mm最大待机电流:0.0015 A
最小待机电流:2 V子类别:SRAMs
最大压摆率:0.285 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子节距:0.5 mm
端子位置:QUAD处于峰值回流温度下的最长时间:30
宽度:14 mmBase Number Matches:1

CY7C024E-15AXCT 数据手册

 浏览型号CY7C024E-15AXCT的Datasheet PDF文件第2页浏览型号CY7C024E-15AXCT的Datasheet PDF文件第3页浏览型号CY7C024E-15AXCT的Datasheet PDF文件第4页浏览型号CY7C024E-15AXCT的Datasheet PDF文件第5页浏览型号CY7C024E-15AXCT的Datasheet PDF文件第6页浏览型号CY7C024E-15AXCT的Datasheet PDF文件第7页 
CY7C024E  
CY7C025E  
CY7C0251E  
4K × 16 and 8K × 16/18  
Dual-Port Static RAM with SEM, INT, BUSY  
4K  
× 16 and 8K × 16/18 Dual-Port Static RAM with SEM, INT, BUSY  
Features  
Functional Description  
True dual-ported memory cells that allow simultaneous reads  
of the same memory location  
The CY7C024E and CY7C025E/CY7C0251E are low-power  
CMOS 4K × 16 and 8K × 16/18 dual-port static RAMs. Various  
arbitration schemes are included on the CY7C024E and  
CY7C025E/CY7C0251E to handle situations when multiple  
processors access the same piece of data. Two ports are  
provided, permitting independent, asynchronous access for  
reads and writes to any location in memory. The CY7C024E and  
CY7C025E/CY7C0251E can be used as standalone 16 or 18-bit  
dual-port static RAMs or multiple devices can be combined to  
function as a 32-/36-bit or wider master/ slave dual-port static  
RAM. An M/S pin is provided for implementing 32-/36-bit or wider  
memory applications without the need for separate master and  
slave devices or additional discrete logic. Application areas  
include interprocessor/multiprocessor designs, communications  
status buffering, and dual-port video/graphics memory.  
4K × 16 organization (CY7C024E)  
8K × 16 organization (CY7C025E)  
8K × 18 organization (CY7C0251E)  
0.35-µ complementary metal oxide semiconductor (CMOS) for  
optimum speed and power  
High-speed access: 15 ns  
Low operating power: ICC = 180 mA (typ), ISB3 = 0.05 mA (typ)  
Fully asynchronous operation  
Automatic power-down  
Each port has independent control pins: Chip Enable (CE), Read  
or Write Enable (R/W), and Output Enable (OE). Two flags are  
provided on each port (BUSY and INT). BUSY signals that the  
port is trying to access the same location currently being  
accessed by the other port. The Interrupt Flag (INT) permits  
communication between ports or systems by means of a mail  
box. The semaphores are used to pass a flag, or token, from one  
port to the other to indicate that a shared resource is in use. The  
semaphore logic is comprised of eight shared latches. Only one  
side can control the latch (semaphore) at any time. Control of a  
semaphore indicates that a shared resource is in use. An  
automatic power-down feature is controlled independently on  
each port by a CE pin.  
Expandable data bus to 32/36 bits or more using master/slave  
chip select when using more than one device  
On-chip arbitration logic  
Semaphores included to permit software handshaking  
between ports  
INT flag for port-to-port communication  
Separate upper-byte and lower-byte control  
Pin select for master or slave  
Available in Pb-free 100-pin thin quad flatpack (TQFP) package  
The CY7C024E and CY7C025E/CY7C0251E are available in  
100-pin Pb-free TQFP.  
For a complete list of related documentation, click here.  
Selection Guide  
Parameter  
Maximum access time (ns)  
-15  
15  
-25  
25  
-55  
55  
Typical operating current (mA)  
Typical standby current for ISB1 (mA)  
190  
50  
170  
40  
150  
20  
Cypress Semiconductor Corporation  
Document Number: 001-62932 Rev. *H  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised August 17, 2017  
 
 

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