CY62256N
256 K (32 K × 8) Static RAM
256K (32K
× 8) Static RAM
Features
Functional Description
■ Temperature ranges
The CY62256N is a high performance CMOS static RAM
organized as 32K words by 8 bits. Easy memory expansion is
provided by an active LOW chip enable (CE) and active LOW
output enable (OE) and tristate drivers. This device has an
automatic power-down feature, reducing the power consumption
by 99.9 percent when deselected.
❐ Commercial: 0 °C to +70 °C
❐ Industrial: –40 °C to +85 °C
❐ Automotive-A: –40 °C to +85 °C
❐ Automotive-E: –40 °C to +125 °C
■ High speed: 55 ns
An active LOW write enable signal (WE) controls the
writing/reading operation of the memory. When CE and WE
inputs are both LOW, data on the eight data input/output pins
(I/O0 through I/O7) is written into the memory location addressed
by the address present on the address pins (A0 through A14).
Reading the device is accomplished by selecting the device and
enabling the outputs, CE and OE active LOW, while WE remains
inactive or HIGH. Under these conditions, the contents of the
location addressed by the information on address pins are
present on the eight data input/output pins.
■ Voltage range: 4.5 V to 5.5 V operation
■ Low active power
❐ 275 mW (max)
■ Low standby power (LL version)
❐ 82.5 μW (max)
■ Easy memory expansion with CE and OE Features
■ TTL-compatible inputs and outputs
The input/output pins remain in a high impedance state unless
the chip is selected, outputs are enabled, and write enable (WE)
is HIGH.
■ Automatic power-down when deselected
■ CMOS for optimum speed and power
■ Available in Pb-free and non Pb-free 28-pin (600-mil) PDIP,
28-pin (300-mil) narrow SOIC, 28-pin TSOP-I, and 28-pin
reverse TSOP-I packages
Logic Block Diagram
I/O
I/O
I/O
I/O
I/O
I/O
I/O
0
INPUTBUFFER
1
2
A
A
A
10
9
8
A
7
6
5
A
3
4
5
32K x 8
ARRAY
A
A
A
A
4
3
2
CE
WE
6
7
POWER
DOWN
COLUMN
DECODER
I/O
OE
Cypress Semiconductor Corporation
Document Number: 001-06511 Rev. *F
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised November 9, 2011