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CY62148L-70SC PDF预览

CY62148L-70SC

更新时间: 2024-01-08 02:46:04
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
7页 189K
描述
512K x 8 Static RAM

CY62148L-70SC 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TSOP2
包装说明:TSOP2-32针数:32
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.71
Is Samacsys:N最长访问时间:70 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G32
JESD-609代码:e0长度:20.95 mm
内存密度:4194304 bit内存集成电路类型:STANDARD SRAM
内存宽度:8湿度敏感等级:3
功能数量:1端子数量:32
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:512KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装等效代码:TSOP32,.46
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):235
电源:5 V认证状态:Not Qualified
座面最大高度:1.2 mm最大待机电流:0.00008 A
最小待机电流:2 V子类别:SRAMs
最大压摆率:0.09 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:10.16 mmBase Number Matches:1

CY62148L-70SC 数据手册

 浏览型号CY62148L-70SC的Datasheet PDF文件第2页浏览型号CY62148L-70SC的Datasheet PDF文件第3页浏览型号CY62148L-70SC的Datasheet PDF文件第4页浏览型号CY62148L-70SC的Datasheet PDF文件第5页浏览型号CY62148L-70SC的Datasheet PDF文件第6页浏览型号CY62148L-70SC的Datasheet PDF文件第7页 
1CY62148  
fax id: 1079  
PRELIMINARY  
CY62148  
512K x 8 Static RAM  
an automatic power-down feature that reduces power con-  
sumption by more than 99% when deselected.  
Features  
• 4.5V5.5V operation  
• CMOS for optimum speed/power  
• Low active power  
Writing to the device is accomplished by taking chip enable  
one (CE) and write enable (WE) inputs LOW. Data on the eight  
I/O pins (I/O through I/O ) is then written into the location  
0
7
specified on the address pins (A through A ).  
0
18  
— 660 mW (max.)  
Reading from the device is accomplished by taking chip en-  
able one (CE) and output enable (OE) LOW while forcing write  
enable (WE). Under these conditions, the contents of the  
memory location specified by the address pins will appear on  
the I/O pins.  
• Low standby power (L version)  
— 2.75 mW (max.)  
• Automatic power-down when deselected  
• TTL-compatible inputs and outputs  
• Easy memory expansion with CE and OE options  
The eight input/output pins (I/O through I/O ) are placed in a  
0
7
high-impedance state when the device is deselected (CE  
HIGH), the outputs are disabled (OE HIGH), or during a write  
operation (CE LOW, and WE LOW).  
Functional Description  
The CY62148 is a high-performance CMOS static RAM orga-  
nized as 524,288 words by 8 bits. Easy memory expansion is  
provided by an active LOW chip enable (CE), an active LOW  
output enable (OE), and three-state drivers. This device has  
The CY62148 is available in a standard 450-mil-wide body  
width SOIC package.  
Logic Block Diagram  
Pin Configuration  
Top View  
SOIC  
A
A
V
32  
31  
30  
17  
1
CC  
16  
14  
12  
A
A
2
3
4
15  
A
A
18  
29  
28  
WE  
5
A
A
A
A
A
A
7
13  
8
I/O  
27  
26  
0
6
6
INPUT BUFFER  
5
7
9
25  
24  
23  
22  
21  
A
A
3
A
0
8
9
10  
11  
12  
13  
A
4
11  
I/O  
1
A
OE  
1
2
A
A
10  
2
A
A
1
I/O  
CE  
I/O  
I/O  
I/O  
2
A
3
4
A
7
0
A
I/O  
I/O  
I/O  
0
1
2
6
5
4
3
20  
19  
A
I/O  
5
3
14  
15  
16  
512K x 8  
ARRAY  
A
6
I/O  
I/O  
18  
17  
A
GND  
7
A
I/O  
4
8
A9  
A
I/O  
5
10  
I/O  
6
POWER  
DOWN  
COLUMN  
DECODER  
CE  
I/O  
WE  
7
62148-1  
OE  
Selection Guide  
CY62148–55  
55  
CY62148–70  
70  
Maximum Access Time (ns)  
Maximum Operating Current  
Maximum CMOS Standby Current  
Commercial  
Commercial  
120 mA  
2 mA  
120 mA  
2 mA  
L
0.5 mA  
0.5 mA  
Shaded areas contain advance information  
Cypress Semiconductor Corporation  
3901 North First Street  
San Jose  
CA 95134  
408-943-2600  
December 1996 - Revised July 31, 1997  

CY62148L-70SC 替代型号

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K6T4008C1B-GF70 SAMSUNG

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512Kx8 bit Low Power CMOS Static RAM
K6T4008C1B-GB70 SAMSUNG

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TC554001FL-70L TOSHIBA

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524,288 WORDS x 8BIT STATIC RAM

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