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CY62148ELL-45ZSXAT PDF预览

CY62148ELL-45ZSXAT

更新时间: 2024-01-03 23:44:15
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
14页 407K
描述
Standard SRAM, 512KX8, 45ns, CMOS, PDSO32

CY62148ELL-45ZSXAT 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TSOP2
包装说明:TSOP2, TSOP32,.46针数:32
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:1.24
最长访问时间:45 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-G32JESD-609代码:e3
长度:20.95 mm内存密度:4194304 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
湿度敏感等级:3功能数量:1
端子数量:32字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:512KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2
封装等效代码:TSOP32,.46封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):260电源:5 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大待机电流:0.000007 A最小待机电流:2 V
子类别:SRAMs最大压摆率:0.02 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:10.16 mm
Base Number Matches:1

CY62148ELL-45ZSXAT 数据手册

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CY62148E MoBL®  
4-Mbit (512 K × 8) Static RAM  
4-Mbit (512  
K × 8) Static RAM  
Features  
Functional Description  
Very high speed: 45 ns  
The CY62148E is a high performance CMOS static RAM  
organized as 512 K words by 8-bits. This device features  
advanced circuit design to provide ultra low active current. This  
is ideal for providing More Battery Life™ (MoBL®) in portable  
applications such as cellular telephones. The device also has an  
automatic power-down feature that significantly reduces power  
consumption when addresses are not toggling. Placing the  
device into standby mode reduces power consumption by more  
than 99% when deselected (CE HIGH). The eight input and  
output pins (I/O0 through I/O7) are placed in a high impedance  
state when the device is deselected (CE HIGH), Outputs are  
disabled (OE HIGH), or during an active Write operation (CE  
LOW and WE LOW)  
Voltage range: 4.5 V to 5.5 V  
Pin compatible with CY62148B  
Ultra low standby power  
Typical standby current: 1 µA  
Maximum standby current: 7 µA (Industrial)  
Ultra low active power  
Typical active current: 2.0 mA at f = 1 MHz  
Easy memory expansion with CE, and OE features  
Automatic power-down when deselected  
To write to the device, take Chip Enable (CE) and Write Enable  
(WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7)  
is then written into the location specified on the address pins (A0  
through A18).  
Complementary metal oxide semiconductor (CMOS) for  
optimum speed and power  
AvailableinPb-free32-pinthinsmalloutlinepackage(TSOP) II  
and 32-pin small-outline integrated circuit (SOIC)[1] packages  
To read from the device, take Chip Enable (CE) and Output  
Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under  
these conditions, the contents of the memory location specified  
by the address pins appear on the I/O pins.  
For best practice recommendations, refer to the Cypress  
application note AN1064, SRAM System Guidelines.  
Logic Block Diagram  
A
I/O  
I
0
0
INPUT BUFFER  
A
1
A
2
I/O  
I
1
2
3
4
5
6
7
A
3
A
4
I/O  
I
A
5
A
I/O  
I
6
512K x 8  
A
7
A
I/O  
I
8
ARRAY  
A
9
A
I/O  
I
10  
A
11  
A
I/O  
12  
I
I/O  
CE  
I
POWER  
DOWN  
COLUMN DECODER  
WE  
OE  
Note  
1. SOIC package is available only in 55 ns speed bin.  
Cypress Semiconductor Corporation  
Document #: 38-05442 Rev. *H  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised August 23, 2010  
[+] Feedback  

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